High-performance transparent, flexible inorganic-organic hybrid thin-film transistors fabricated at room temperature using n-type in 2O 3 semiconducting films

Lian Wang, Tobin J. Marks

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

High-performance inorganic-organic hybrid thin-film transistors (TFTs) are fabricated using semiconducting In 2O 3 thin-film deposited at room-temperature by ion-assisted deposition and thin organic dielectrics grown at near-room temperature. These hybrid TFTs combine the advantages of a high-mobility inorganic semiconductor with high-capacitance organic gate dielectrics. In 2O 3 thin-films exhibit high optical transparency in the visible region, a wide band gap, and smooth morphologies. Furthermore, the present In 2O 3 films are compatible with both inorganic dielectrics and nanoscopic high-capacitance/low-leakage organic dielectrics. The resulting transparent flexible TFTs exhibit near-1.0V operating characteristics with a very large field-effect mobility of ≥ 100 cm 2/V·s, and a near-zero threshold voltage. The high performance exhibits a significant improvement over previous organic and metal-oxide-based TFTs, and even rivals that of poly-Si TFTs. In addition, these TFTs exhibit great light- and air-stability when exposed to ambient.

Original languageEnglish
Title of host publicationNanophotonic Materials III
DOIs
Publication statusPublished - Nov 21 2006
EventNanophotonic Materials III - San Diego, CA, United States
Duration: Aug 13 2006Aug 14 2006

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6321
ISSN (Print)0277-786X

Other

OtherNanophotonic Materials III
CountryUnited States
CitySan Diego, CA
Period8/13/068/14/06

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Wang, L., & Marks, T. J. (2006). High-performance transparent, flexible inorganic-organic hybrid thin-film transistors fabricated at room temperature using n-type in 2O 3 semiconducting films. In Nanophotonic Materials III [63210A] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6321). https://doi.org/10.1117/12.681442