High-performance transparent, flexible inorganic-organic hybrid thin-film transistors fabricated at room temperature using n-type in 2O 3 semiconducting films

Lian Wang, Tobin J Marks

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

High-performance inorganic-organic hybrid thin-film transistors (TFTs) are fabricated using semiconducting In 2O 3 thin-film deposited at room-temperature by ion-assisted deposition and thin organic dielectrics grown at near-room temperature. These hybrid TFTs combine the advantages of a high-mobility inorganic semiconductor with high-capacitance organic gate dielectrics. In 2O 3 thin-films exhibit high optical transparency in the visible region, a wide band gap, and smooth morphologies. Furthermore, the present In 2O 3 films are compatible with both inorganic dielectrics and nanoscopic high-capacitance/low-leakage organic dielectrics. The resulting transparent flexible TFTs exhibit near-1.0V operating characteristics with a very large field-effect mobility of ≥ 100 cm 2/V·s, and a near-zero threshold voltage. The high performance exhibits a significant improvement over previous organic and metal-oxide-based TFTs, and even rivals that of poly-Si TFTs. In addition, these TFTs exhibit great light- and air-stability when exposed to ambient.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Volume6321
DOIs
Publication statusPublished - 2006
EventNanophotonic Materials III - San Diego, CA, United States
Duration: Aug 13 2006Aug 14 2006

Other

OtherNanophotonic Materials III
CountryUnited States
CitySan Diego, CA
Period8/13/068/14/06

Fingerprint

Semiconducting films
semiconducting films
Thin film transistors
transistors
room temperature
thin films
Temperature
Capacitance
Thin films
capacitance
Gate dielectrics
Threshold voltage
Polysilicon
Transparency
Energy gap
threshold voltage
Semiconductor materials
metal oxides
Oxides
leakage

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

High-performance transparent, flexible inorganic-organic hybrid thin-film transistors fabricated at room temperature using n-type in 2O 3 semiconducting films. / Wang, Lian; Marks, Tobin J.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 6321 2006. 63210A.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Wang, L & Marks, TJ 2006, High-performance transparent, flexible inorganic-organic hybrid thin-film transistors fabricated at room temperature using n-type in 2O 3 semiconducting films. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 6321, 63210A, Nanophotonic Materials III, San Diego, CA, United States, 8/13/06. https://doi.org/10.1117/12.681442
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