High performance ZnO nanowire field effect transistors with organic gate nanodielectrics

Effects of metal contacts and ozone treatment

Sanghyun Ju, Kangho Lee, Myung Han Yoon, Antonio Facchetti, Tobin J Marks, David B. Janes

Research output: Contribution to journalArticle

69 Citations (Scopus)

Abstract

High performance ZnO nanowire field effect transistors (NW-FETs) were fabricated using a nanoscopic self-assembled organic gate insulator and characterized in terms of conventional device performance metrics. To optimize device performance and understand the effects of interface properties, devices were fabricated with both Al and Au/Ti source/drain contacts, and device electrical properties were characterized following annealing and ozone treatment. Ozone-treated single ZnO NW-FETs with Al contacts exhibited an on-current (Ion) of ∼4 μA at 0.9 Vgs and 1.0 V ds, a threshold voltage (Vth) of 0.2 V, a subthreshold slope (S) of ∼130 mV/decade, an on-off current ratio (Ion:I off) of ∼107, and a field effect mobility (μeff) of ∼1175 cm2 V-1 s-1. In addition, ozone-treated ZnO NW-FETs consistently retained the enhanced device performance metrics after SiO2 passivation. A 2D device simulation was performed to explain the enhanced device performance in terms of changes in interfacial trap and fixed charge densities.

Original languageEnglish
Article number155201
JournalNanotechnology
Volume18
Issue number15
DOIs
Publication statusPublished - Apr 18 2007

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Ozone
Field effect transistors
Nanowires
Metals
Ions
Charge density
Threshold voltage
Passivation
Electric properties
Annealing

ASJC Scopus subject areas

  • Materials Science(all)
  • Bioengineering
  • Chemistry(all)
  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

High performance ZnO nanowire field effect transistors with organic gate nanodielectrics : Effects of metal contacts and ozone treatment. / Ju, Sanghyun; Lee, Kangho; Yoon, Myung Han; Facchetti, Antonio; Marks, Tobin J; Janes, David B.

In: Nanotechnology, Vol. 18, No. 15, 155201, 18.04.2007.

Research output: Contribution to journalArticle

Ju, Sanghyun ; Lee, Kangho ; Yoon, Myung Han ; Facchetti, Antonio ; Marks, Tobin J ; Janes, David B. / High performance ZnO nanowire field effect transistors with organic gate nanodielectrics : Effects of metal contacts and ozone treatment. In: Nanotechnology. 2007 ; Vol. 18, No. 15.
@article{476cf2e76cff4e3987155f02961adf2e,
title = "High performance ZnO nanowire field effect transistors with organic gate nanodielectrics: Effects of metal contacts and ozone treatment",
abstract = "High performance ZnO nanowire field effect transistors (NW-FETs) were fabricated using a nanoscopic self-assembled organic gate insulator and characterized in terms of conventional device performance metrics. To optimize device performance and understand the effects of interface properties, devices were fabricated with both Al and Au/Ti source/drain contacts, and device electrical properties were characterized following annealing and ozone treatment. Ozone-treated single ZnO NW-FETs with Al contacts exhibited an on-current (Ion) of ∼4 μA at 0.9 Vgs and 1.0 V ds, a threshold voltage (Vth) of 0.2 V, a subthreshold slope (S) of ∼130 mV/decade, an on-off current ratio (Ion:I off) of ∼107, and a field effect mobility (μeff) of ∼1175 cm2 V-1 s-1. In addition, ozone-treated ZnO NW-FETs consistently retained the enhanced device performance metrics after SiO2 passivation. A 2D device simulation was performed to explain the enhanced device performance in terms of changes in interfacial trap and fixed charge densities.",
author = "Sanghyun Ju and Kangho Lee and Yoon, {Myung Han} and Antonio Facchetti and Marks, {Tobin J} and Janes, {David B.}",
year = "2007",
month = "4",
day = "18",
doi = "10.1088/0957-4484/18/15/155201",
language = "English",
volume = "18",
journal = "Nanotechnology",
issn = "0957-4484",
publisher = "IOP Publishing Ltd.",
number = "15",

}

TY - JOUR

T1 - High performance ZnO nanowire field effect transistors with organic gate nanodielectrics

T2 - Effects of metal contacts and ozone treatment

AU - Ju, Sanghyun

AU - Lee, Kangho

AU - Yoon, Myung Han

AU - Facchetti, Antonio

AU - Marks, Tobin J

AU - Janes, David B.

PY - 2007/4/18

Y1 - 2007/4/18

N2 - High performance ZnO nanowire field effect transistors (NW-FETs) were fabricated using a nanoscopic self-assembled organic gate insulator and characterized in terms of conventional device performance metrics. To optimize device performance and understand the effects of interface properties, devices were fabricated with both Al and Au/Ti source/drain contacts, and device electrical properties were characterized following annealing and ozone treatment. Ozone-treated single ZnO NW-FETs with Al contacts exhibited an on-current (Ion) of ∼4 μA at 0.9 Vgs and 1.0 V ds, a threshold voltage (Vth) of 0.2 V, a subthreshold slope (S) of ∼130 mV/decade, an on-off current ratio (Ion:I off) of ∼107, and a field effect mobility (μeff) of ∼1175 cm2 V-1 s-1. In addition, ozone-treated ZnO NW-FETs consistently retained the enhanced device performance metrics after SiO2 passivation. A 2D device simulation was performed to explain the enhanced device performance in terms of changes in interfacial trap and fixed charge densities.

AB - High performance ZnO nanowire field effect transistors (NW-FETs) were fabricated using a nanoscopic self-assembled organic gate insulator and characterized in terms of conventional device performance metrics. To optimize device performance and understand the effects of interface properties, devices were fabricated with both Al and Au/Ti source/drain contacts, and device electrical properties were characterized following annealing and ozone treatment. Ozone-treated single ZnO NW-FETs with Al contacts exhibited an on-current (Ion) of ∼4 μA at 0.9 Vgs and 1.0 V ds, a threshold voltage (Vth) of 0.2 V, a subthreshold slope (S) of ∼130 mV/decade, an on-off current ratio (Ion:I off) of ∼107, and a field effect mobility (μeff) of ∼1175 cm2 V-1 s-1. In addition, ozone-treated ZnO NW-FETs consistently retained the enhanced device performance metrics after SiO2 passivation. A 2D device simulation was performed to explain the enhanced device performance in terms of changes in interfacial trap and fixed charge densities.

UR - http://www.scopus.com/inward/record.url?scp=33947405274&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33947405274&partnerID=8YFLogxK

U2 - 10.1088/0957-4484/18/15/155201

DO - 10.1088/0957-4484/18/15/155201

M3 - Article

VL - 18

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 15

M1 - 155201

ER -