Abstract
High performance ZnO nanowire field effect transistors (NW-FETs) were fabricated using a nanoscopic self-assembled organic gate insulator and characterized in terms of conventional device performance metrics. To optimize device performance and understand the effects of interface properties, devices were fabricated with both Al and Au/Ti source/drain contacts, and device electrical properties were characterized following annealing and ozone treatment. Ozone-treated single ZnO NW-FETs with Al contacts exhibited an on-current (Ion) of ∼4 μA at 0.9 Vgs and 1.0 V ds, a threshold voltage (Vth) of 0.2 V, a subthreshold slope (S) of ∼130 mV/decade, an on-off current ratio (Ion:I off) of ∼107, and a field effect mobility (μeff) of ∼1175 cm2 V-1 s-1. In addition, ozone-treated ZnO NW-FETs consistently retained the enhanced device performance metrics after SiO2 passivation. A 2D device simulation was performed to explain the enhanced device performance in terms of changes in interfacial trap and fixed charge densities.
| Original language | English |
|---|---|
| Article number | 155201 |
| Journal | Nanotechnology |
| Volume | 18 |
| Issue number | 15 |
| DOIs | |
| Publication status | Published - Apr 18 2007 |
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ASJC Scopus subject areas
- Materials Science(all)
- Bioengineering
- Chemistry(all)
- Electrical and Electronic Engineering
- Mechanical Engineering
- Mechanics of Materials
Cite this
High performance ZnO nanowire field effect transistors with organic gate nanodielectrics : Effects of metal contacts and ozone treatment. / Ju, Sanghyun; Lee, Kangho; Yoon, Myung Han; Facchetti, Antonio; Marks, Tobin J; Janes, David B.
In: Nanotechnology, Vol. 18, No. 15, 155201, 18.04.2007.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - High performance ZnO nanowire field effect transistors with organic gate nanodielectrics
T2 - Effects of metal contacts and ozone treatment
AU - Ju, Sanghyun
AU - Lee, Kangho
AU - Yoon, Myung Han
AU - Facchetti, Antonio
AU - Marks, Tobin J
AU - Janes, David B.
PY - 2007/4/18
Y1 - 2007/4/18
N2 - High performance ZnO nanowire field effect transistors (NW-FETs) were fabricated using a nanoscopic self-assembled organic gate insulator and characterized in terms of conventional device performance metrics. To optimize device performance and understand the effects of interface properties, devices were fabricated with both Al and Au/Ti source/drain contacts, and device electrical properties were characterized following annealing and ozone treatment. Ozone-treated single ZnO NW-FETs with Al contacts exhibited an on-current (Ion) of ∼4 μA at 0.9 Vgs and 1.0 V ds, a threshold voltage (Vth) of 0.2 V, a subthreshold slope (S) of ∼130 mV/decade, an on-off current ratio (Ion:I off) of ∼107, and a field effect mobility (μeff) of ∼1175 cm2 V-1 s-1. In addition, ozone-treated ZnO NW-FETs consistently retained the enhanced device performance metrics after SiO2 passivation. A 2D device simulation was performed to explain the enhanced device performance in terms of changes in interfacial trap and fixed charge densities.
AB - High performance ZnO nanowire field effect transistors (NW-FETs) were fabricated using a nanoscopic self-assembled organic gate insulator and characterized in terms of conventional device performance metrics. To optimize device performance and understand the effects of interface properties, devices were fabricated with both Al and Au/Ti source/drain contacts, and device electrical properties were characterized following annealing and ozone treatment. Ozone-treated single ZnO NW-FETs with Al contacts exhibited an on-current (Ion) of ∼4 μA at 0.9 Vgs and 1.0 V ds, a threshold voltage (Vth) of 0.2 V, a subthreshold slope (S) of ∼130 mV/decade, an on-off current ratio (Ion:I off) of ∼107, and a field effect mobility (μeff) of ∼1175 cm2 V-1 s-1. In addition, ozone-treated ZnO NW-FETs consistently retained the enhanced device performance metrics after SiO2 passivation. A 2D device simulation was performed to explain the enhanced device performance in terms of changes in interfacial trap and fixed charge densities.
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U2 - 10.1088/0957-4484/18/15/155201
DO - 10.1088/0957-4484/18/15/155201
M3 - Article
AN - SCOPUS:33947405274
VL - 18
JO - Nanotechnology
JF - Nanotechnology
SN - 0957-4484
IS - 15
M1 - 155201
ER -