High-quality nanothickness single-crystal [formula omitted] film grown on Si(111)

M. Hong, A. R. Kortan, P. Chang, Y. L. Huang, C. P. Chen, H. Y. Chou, H. Y. Lee, J. Kwo, M. W. Chu, C. H. Chen, L. V. Goncharova, E. Garfunkel, T. Gustafsson

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1 Citation (Scopus)


High-quality single-crystal [formula omitted] films a few nanometer thick have been grown epitaxially on Si (111) despite a huge lattice mismatch. The films were electron-beam evaporated from a [formula omitted] target. Structural and morphological studies were carried out by x-ray diffraction and reflectivity, atomic force microscopy, high-resolution transmission electron microscopy, and medium-energy ion scattering, with the initial epitaxial growth monitored by in situ reflection high-energy electron diffraction. The films have the cubic bixbyite phase with a remarkably uniform thickness and high structural perfection. The film surfaces are very smooth and the oxide/Si interfaces are atomically sharp with a low average roughness of [formula omitted]. The films are well aligned with the Si substrate with an orientation relationship of [formula omitted], and an in-plane expitaxy of [formula omitted].

Original languageEnglish
Pages (from-to)1687, 2
JournalApplied Physics Letters
Issue number25
Publication statusPublished - Dec 19 2005

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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