High-quality nanothickness single-crystal [formula omitted] film grown on Si(111)

M. Hong, A. R. Kortan, P. Chang, Y. L. Huang, C. P. Chen, H. Y. Chou, H. Y. Lee, J. Kwo, M. W. Chu, C. H. Chen, L. V. Goncharova, Eric Garfunkel, T. Gustafsson

Research output: Contribution to journal › Article

1 Citation (Scopus)

Abstract

High-quality single-crystal [formula omitted] films a few nanometer thick have been grown epitaxially on Si (111) despite a huge lattice mismatch. The films were electron-beam evaporated from a [formula omitted] target. Structural and morphological studies were carried out by x-ray diffraction and reflectivity, atomic force microscopy, high-resolution transmission electron microscopy, and medium-energy ion scattering, with the initial epitaxial growth monitored by in situ reflection high-energy electron diffraction. The films have the cubic bixbyite phase with a remarkably uniform thickness and high structural perfection. The film surfaces are very smooth and the oxide/Si interfaces are atomically sharp with a low average roughness of [formula omitted]. The films are well aligned with the Si substrate with an orientation relationship of [formula omitted], and an in-plane expitaxy of [formula omitted].

Original languageEnglish
JournalApplied Physics Letters
Volume87
Issue number25
DOIs
Publication statusPublished - Dec 19 2005

Fingerprint

single crystals
ion scattering
high energy electrons
x ray diffraction
roughness
electron diffraction
atomic force microscopy
electron beams
reflectance
transmission electron microscopy
oxides
high resolution
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Hong, M., Kortan, A. R., Chang, P., Huang, Y. L., Chen, C. P., Chou, H. Y., ... Gustafsson, T. (2005). High-quality nanothickness single-crystal [formula omitted] film grown on Si(111). Applied Physics Letters, 87(25). https://doi.org/10.1063/1.2147711

High-quality nanothickness single-crystal [formula omitted] film grown on Si(111). / Hong, M.; Kortan, A. R.; Chang, P.; Huang, Y. L.; Chen, C. P.; Chou, H. Y.; Lee, H. Y.; Kwo, J.; Chu, M. W.; Chen, C. H.; Goncharova, L. V.; Garfunkel, Eric; Gustafsson, T.

In: Applied Physics Letters, Vol. 87, No. 25, 19.12.2005.

Research output: Contribution to journal › Article

Hong, M, Kortan, AR, Chang, P, Huang, YL, Chen, CP, Chou, HY, Lee, HY, Kwo, J, Chu, MW, Chen, CH, Goncharova, LV, Garfunkel, E & Gustafsson, T 2005, 'High-quality nanothickness single-crystal [formula omitted] film grown on Si(111)', Applied Physics Letters, vol. 87, no. 25. https://doi.org/10.1063/1.2147711
Hong M, Kortan AR, Chang P, Huang YL, Chen CP, Chou HY et al. High-quality nanothickness single-crystal [formula omitted] film grown on Si(111). Applied Physics Letters. 2005 Dec 19;87(25). https://doi.org/10.1063/1.2147711
Hong, M. ; Kortan, A. R. ; Chang, P. ; Huang, Y. L. ; Chen, C. P. ; Chou, H. Y. ; Lee, H. Y. ; Kwo, J. ; Chu, M. W. ; Chen, C. H. ; Goncharova, L. V. ; Garfunkel, Eric ; Gustafsson, T. / High-quality nanothickness single-crystal [formula omitted] film grown on Si(111). In: Applied Physics Letters. 2005 ; Vol. 87, No. 25.
@article{2a0f98b191a846e5b2b2184fc62ea125,
title = "High-quality nanothickness single-crystal [formula omitted] film grown on Si(111)",
abstract = "High-quality single-crystal [formula omitted] films a few nanometer thick have been grown epitaxially on Si (111) despite a huge lattice mismatch. The films were electron-beam evaporated from a [formula omitted] target. Structural and morphological studies were carried out by x-ray diffraction and reflectivity, atomic force microscopy, high-resolution transmission electron microscopy, and medium-energy ion scattering, with the initial epitaxial growth monitored by in situ reflection high-energy electron diffraction. The films have the cubic bixbyite phase with a remarkably uniform thickness and high structural perfection. The film surfaces are very smooth and the oxide/Si interfaces are atomically sharp with a low average roughness of [formula omitted]. The films are well aligned with the Si substrate with an orientation relationship of [formula omitted], and an in-plane expitaxy of [formula omitted].",
author = "M. Hong and Kortan, {A. R.} and P. Chang and Huang, {Y. L.} and Chen, {C. P.} and Chou, {H. Y.} and Lee, {H. Y.} and J. Kwo and Chu, {M. W.} and Chen, {C. H.} and Goncharova, {L. V.} and Eric Garfunkel and T. Gustafsson",
year = "2005",
month = "12",
day = "19",
doi = "10.1063/1.2147711",
language = "English",
volume = "87",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "25",

}

TY - JOUR

T1 - High-quality nanothickness single-crystal [formula omitted] film grown on Si(111)

AU - Hong, M.

AU - Kortan, A. R.

AU - Chang, P.

AU - Huang, Y. L.

AU - Chen, C. P.

AU - Chou, H. Y.

AU - Lee, H. Y.

AU - Kwo, J.

AU - Chu, M. W.

AU - Chen, C. H.

AU - Goncharova, L. V.

AU - Garfunkel, Eric

AU - Gustafsson, T.

PY - 2005/12/19

Y1 - 2005/12/19

N2 - High-quality single-crystal [formula omitted] films a few nanometer thick have been grown epitaxially on Si (111) despite a huge lattice mismatch. The films were electron-beam evaporated from a [formula omitted] target. Structural and morphological studies were carried out by x-ray diffraction and reflectivity, atomic force microscopy, high-resolution transmission electron microscopy, and medium-energy ion scattering, with the initial epitaxial growth monitored by in situ reflection high-energy electron diffraction. The films have the cubic bixbyite phase with a remarkably uniform thickness and high structural perfection. The film surfaces are very smooth and the oxide/Si interfaces are atomically sharp with a low average roughness of [formula omitted]. The films are well aligned with the Si substrate with an orientation relationship of [formula omitted], and an in-plane expitaxy of [formula omitted].

AB - High-quality single-crystal [formula omitted] films a few nanometer thick have been grown epitaxially on Si (111) despite a huge lattice mismatch. The films were electron-beam evaporated from a [formula omitted] target. Structural and morphological studies were carried out by x-ray diffraction and reflectivity, atomic force microscopy, high-resolution transmission electron microscopy, and medium-energy ion scattering, with the initial epitaxial growth monitored by in situ reflection high-energy electron diffraction. The films have the cubic bixbyite phase with a remarkably uniform thickness and high structural perfection. The film surfaces are very smooth and the oxide/Si interfaces are atomically sharp with a low average roughness of [formula omitted]. The films are well aligned with the Si substrate with an orientation relationship of [formula omitted], and an in-plane expitaxy of [formula omitted].

UR - http://www.scopus.com/inward/record.url?scp=85024805120&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85024805120&partnerID=8YFLogxK

U2 - 10.1063/1.2147711

DO - 10.1063/1.2147711

M3 - Article

VL - 87

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 25

ER -

Access to Document