Abstract
High-quality single-crystal [formula omitted] films a few nanometer thick have been grown epitaxially on Si (111) despite a huge lattice mismatch. The films were electron-beam evaporated from a [formula omitted] target. Structural and morphological studies were carried out by x-ray diffraction and reflectivity, atomic force microscopy, high-resolution transmission electron microscopy, and medium-energy ion scattering, with the initial epitaxial growth monitored by in situ reflection high-energy electron diffraction. The films have the cubic bixbyite phase with a remarkably uniform thickness and high structural perfection. The film surfaces are very smooth and the oxide/Si interfaces are atomically sharp with a low average roughness of [formula omitted]. The films are well aligned with the Si substrate with an orientation relationship of [formula omitted], and an in-plane expitaxy of [formula omitted].
Original language | English |
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Pages (from-to) | 1687, 2 |
Journal | Applied Physics Letters |
Volume | 87 |
Issue number | 25 |
DOIs | |
Publication status | Published - Dec 19 2005 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)