High-quality nanothickness single-crystal [formula omitted] film grown on Si(111)

M. Hong; A. R. Kortan; P. Chang; Y. L. Huang; C. P. Chen; H. Y. Chou; H. Y. Lee; J. Kwo; M. W. Chu; C. H. Chen; L. V. Goncharova; Eric Garfunkel; T. Gustafsson

doi:10.1063/1.2147711

High-quality nanothickness single-crystal [formula omitted] film grown on Si(111)

M. Hong, A. R. Kortan, P. Chang, Y. L. Huang, C. P. Chen, H. Y. Chou, H. Y. Lee, J. Kwo, M. W. Chu, C. H. Chen, L. V. Goncharova, Eric Garfunkel, T. Gustafsson

Rutgers University

Research output: Contribution to journal › Article

1 Citation (Scopus)

Abstract

High-quality single-crystal [formula omitted] films a few nanometer thick have been grown epitaxially on Si (111) despite a huge lattice mismatch. The films were electron-beam evaporated from a [formula omitted] target. Structural and morphological studies were carried out by x-ray diffraction and reflectivity, atomic force microscopy, high-resolution transmission electron microscopy, and medium-energy ion scattering, with the initial epitaxial growth monitored by in situ reflection high-energy electron diffraction. The films have the cubic bixbyite phase with a remarkably uniform thickness and high structural perfection. The film surfaces are very smooth and the oxide/Si interfaces are atomically sharp with a low average roughness of [formula omitted]. The films are well aligned with the Si substrate with an orientation relationship of [formula omitted], and an in-plane expitaxy of [formula omitted].

Original language	English
Journal	Applied Physics Letters
Volume	87
Issue number	25
DOIs	https://doi.org/10.1063/1.2147711
Publication status	Published - Dec 19 2005

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Hong, M., Kortan, A. R., Chang, P., Huang, Y. L., Chen, C. P., Chou, H. Y., Lee, H. Y., Kwo, J., Chu, M. W., Chen, C. H., Goncharova, L. V., Garfunkel, E., & Gustafsson, T. (2005). High-quality nanothickness single-crystal [formula omitted] film grown on Si(111). Applied Physics Letters, 87(25). https://doi.org/10.1063/1.2147711

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title = "High-quality nanothickness single-crystal [formula omitted] film grown on Si(111)",

abstract = "High-quality single-crystal [formula omitted] films a few nanometer thick have been grown epitaxially on Si (111) despite a huge lattice mismatch. The films were electron-beam evaporated from a [formula omitted] target. Structural and morphological studies were carried out by x-ray diffraction and reflectivity, atomic force microscopy, high-resolution transmission electron microscopy, and medium-energy ion scattering, with the initial epitaxial growth monitored by in situ reflection high-energy electron diffraction. The films have the cubic bixbyite phase with a remarkably uniform thickness and high structural perfection. The film surfaces are very smooth and the oxide/Si interfaces are atomically sharp with a low average roughness of [formula omitted]. The films are well aligned with the Si substrate with an orientation relationship of [formula omitted], and an in-plane expitaxy of [formula omitted].",

author = "M. Hong and Kortan, {A. R.} and P. Chang and Huang, {Y. L.} and Chen, {C. P.} and Chou, {H. Y.} and Lee, {H. Y.} and J. Kwo and Chu, {M. W.} and Chen, {C. H.} and Goncharova, {L. V.} and Eric Garfunkel and T. Gustafsson",

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AU - Hong, M.

AU - Kortan, A. R.

AU - Chang, P.

AU - Huang, Y. L.

AU - Chen, C. P.

AU - Chou, H. Y.

AU - Lee, H. Y.

AU - Kwo, J.

AU - Chu, M. W.

AU - Chen, C. H.

AU - Goncharova, L. V.

AU - Garfunkel, Eric

AU - Gustafsson, T.

PY - 2005/12/19

Y1 - 2005/12/19

N2 - High-quality single-crystal [formula omitted] films a few nanometer thick have been grown epitaxially on Si (111) despite a huge lattice mismatch. The films were electron-beam evaporated from a [formula omitted] target. Structural and morphological studies were carried out by x-ray diffraction and reflectivity, atomic force microscopy, high-resolution transmission electron microscopy, and medium-energy ion scattering, with the initial epitaxial growth monitored by in situ reflection high-energy electron diffraction. The films have the cubic bixbyite phase with a remarkably uniform thickness and high structural perfection. The film surfaces are very smooth and the oxide/Si interfaces are atomically sharp with a low average roughness of [formula omitted]. The films are well aligned with the Si substrate with an orientation relationship of [formula omitted], and an in-plane expitaxy of [formula omitted].

AB - High-quality single-crystal [formula omitted] films a few nanometer thick have been grown epitaxially on Si (111) despite a huge lattice mismatch. The films were electron-beam evaporated from a [formula omitted] target. Structural and morphological studies were carried out by x-ray diffraction and reflectivity, atomic force microscopy, high-resolution transmission electron microscopy, and medium-energy ion scattering, with the initial epitaxial growth monitored by in situ reflection high-energy electron diffraction. The films have the cubic bixbyite phase with a remarkably uniform thickness and high structural perfection. The film surfaces are very smooth and the oxide/Si interfaces are atomically sharp with a low average roughness of [formula omitted]. The films are well aligned with the Si substrate with an orientation relationship of [formula omitted], and an in-plane expitaxy of [formula omitted].

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