High resistivity in InP by helium bombardment

M. W. Focht, A. T. MacRander, B. Schwartz, L. C. Feldman

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Abstract

Helium implants over a fluence range from 1011 to 1016 ions/cm2, reproducibly form high resistivity regions in both p- and n-type InP. Average resistivities of greater than 109 Ω cm for p-type InP and of 103 Ω cm for n-type InP are reported. Results are presented of a Monte Carlo simulation of helium bombardment into the compound target InP that yields the mean projected range and the range straggling.

Original languageEnglish
Pages (from-to)3859-3862
Number of pages4
JournalJournal of Applied Physics
Volume55
Issue number10
DOIs
Publication statusPublished - Dec 1 1984

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

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