Abstract
Helium implants over a fluence range from 1011 to 1016 ions/cm2, reproducibly form high resistivity regions in both p- and n-type InP. Average resistivities of greater than 109 Ω cm for p-type InP and of 103 Ω cm for n-type InP are reported. Results are presented of a Monte Carlo simulation of helium bombardment into the compound target InP that yields the mean projected range and the range straggling.
Original language | English |
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Pages (from-to) | 3859-3862 |
Number of pages | 4 |
Journal | Journal of Applied Physics |
Volume | 55 |
Issue number | 10 |
DOIs | |
Publication status | Published - Dec 1 1984 |
ASJC Scopus subject areas
- Physics and Astronomy(all)