Abstract
Helium implants over a fluence range from 10**1**1 to 10**1**6 ions/cm**2, reproducibly form high resistivity regions in both p- and n-type InP. Average resistivities of greater than 10**9 OMEGA cm for p-type InP and of 10**3 OMEGA cm for n-type InP are reported. Results are presented of a Monte Carlo simulation of helium bombardment into the compound target InP that yields the mean projected range and the range straggling.
| Original language | English |
|---|---|
| Pages (from-to) | 3859-3862 |
| Number of pages | 4 |
| Journal | Journal of Applied Physics |
| Volume | 55 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - Jan 1 1984 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physics and Astronomy (miscellaneous)
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HIGH RESISTIVITY IN InP BY HELIUM BOMBARDMENT. / Focht, M. W.; Macrander, A. T.; Schwartz, B.; Feldman, Leonard C.
In: Journal of Applied Physics, Vol. 55, No. 10, 01.01.1984, p. 3859-3862.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - HIGH RESISTIVITY IN InP BY HELIUM BOMBARDMENT.
AU - Focht, M. W.
AU - Macrander, A. T.
AU - Schwartz, B.
AU - Feldman, Leonard C
PY - 1984/1/1
Y1 - 1984/1/1
N2 - Helium implants over a fluence range from 10**1**1 to 10**1**6 ions/cm**2, reproducibly form high resistivity regions in both p- and n-type InP. Average resistivities of greater than 10**9 OMEGA cm for p-type InP and of 10**3 OMEGA cm for n-type InP are reported. Results are presented of a Monte Carlo simulation of helium bombardment into the compound target InP that yields the mean projected range and the range straggling.
AB - Helium implants over a fluence range from 10**1**1 to 10**1**6 ions/cm**2, reproducibly form high resistivity regions in both p- and n-type InP. Average resistivities of greater than 10**9 OMEGA cm for p-type InP and of 10**3 OMEGA cm for n-type InP are reported. Results are presented of a Monte Carlo simulation of helium bombardment into the compound target InP that yields the mean projected range and the range straggling.
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UR - http://www.scopus.com/inward/citedby.url?scp=0021422657&partnerID=8YFLogxK
U2 - 10.1063/1.332897
DO - 10.1063/1.332897
M3 - Article
AN - SCOPUS:0021422657
VL - 55
SP - 3859
EP - 3862
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 10
ER -