High resistivity in InP by helium bombardment

M. W. Focht; A. T. MacRander; B. Schwartz; L. C. Feldman

doi:10.1063/1.332897

High resistivity in InP by helium bombardment

M. W. Focht, A. T. MacRander, B. Schwartz, L. C. Feldman

Rutgers University

Research output: Contribution to journal › Article

28 Citations (Scopus)

Abstract

Helium implants over a fluence range from 10¹¹ to 10¹⁶ ions/cm², reproducibly form high resistivity regions in both p- and n-type InP. Average resistivities of greater than 10⁹ Ω cm for p-type InP and of 10³ Ω cm for n-type InP are reported. Results are presented of a Monte Carlo simulation of helium bombardment into the compound target InP that yields the mean projected range and the range straggling.

Original language	English
Pages (from-to)	3859-3862
Number of pages	4
Journal	Journal of Applied Physics
Volume	55
Issue number	10
DOIs	https://doi.org/10.1063/1.332897
Publication status	Published - Dec 1 1984

ASJC Scopus subject areas

Physics and Astronomy(all)

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Focht, M. W., MacRander, A. T., Schwartz, B., & Feldman, L. C. (1984). High resistivity in InP by helium bombardment. Journal of Applied Physics, 55(10), 3859-3862. https://doi.org/10.1063/1.332897

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