HIGH RESISTIVITY IN InP BY HELIUM BOMBARDMENT.

M. W. Focht, A. T. Macrander, B. Schwartz, Leonard C Feldman

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

Helium implants over a fluence range from 10**1**1 to 10**1**6 ions/cm**2, reproducibly form high resistivity regions in both p- and n-type InP. Average resistivities of greater than 10**9 OMEGA cm for p-type InP and of 10**3 OMEGA cm for n-type InP are reported. Results are presented of a Monte Carlo simulation of helium bombardment into the compound target InP that yields the mean projected range and the range straggling.

Original languageEnglish
Pages (from-to)3859-3862
Number of pages4
JournalJournal of Applied Physics
Volume55
Issue number10
DOIs
Publication statusPublished - Jan 1 1984

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helium
electrical resistivity
bombardment
fluence
ions
simulation

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

HIGH RESISTIVITY IN InP BY HELIUM BOMBARDMENT. / Focht, M. W.; Macrander, A. T.; Schwartz, B.; Feldman, Leonard C.

In: Journal of Applied Physics, Vol. 55, No. 10, 01.01.1984, p. 3859-3862.

Research output: Contribution to journalArticle

Focht, MW, Macrander, AT, Schwartz, B & Feldman, LC 1984, 'HIGH RESISTIVITY IN InP BY HELIUM BOMBARDMENT.', Journal of Applied Physics, vol. 55, no. 10, pp. 3859-3862. https://doi.org/10.1063/1.332897
Focht, M. W. ; Macrander, A. T. ; Schwartz, B. ; Feldman, Leonard C. / HIGH RESISTIVITY IN InP BY HELIUM BOMBARDMENT. In: Journal of Applied Physics. 1984 ; Vol. 55, No. 10. pp. 3859-3862.
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