Helium implants over a fluence range from 1011 to 1016 ions/cm2, reproducibly form high resistivity regions in both p- and n-type InP. Average resistivities of greater than 109 Ω cm for p-type InP and of 103 Ω cm for n-type InP are reported. Results are presented of a Monte Carlo simulation of helium bombardment into the compound target InP that yields the mean projected range and the range straggling.
ASJC Scopus subject areas
- Physics and Astronomy(all)