Abstract
Medium-energy ion scattering (MEIS) has been used to characterize the composition of ultrathin gate dielectrics. Examples covering investigations on silicon-oxides and oxynitrides as well as high-dielectric constant (high-K) films on silicon substrates are discussed, with special emphasis on understanding film growth. In the MEIS spectra obtained from ultrathin films, the signals from different oxygen and nitrogen isotopes are well separated. By analyzing samples that have undergone different thermal processing steps in gases of different isotopes, both growth mechanisms and also atomic exchange effects can therefore be monitored directly. For various high-K dielectric films, we found that oxygen-isotope exchange is significant even at temperatures below 500°C. This may point to a serious limitation for the application of such materials as gate dielectrics in semiconductor devices.
| Original language | English |
|---|---|
| Pages (from-to) | 146-153 |
| Number of pages | 8 |
| Journal | Nuclear Inst. and Methods in Physics Research, B |
| Volume | 183 |
| Issue number | 1-2 |
| DOIs | |
| Publication status | Published - Jul 2001 |
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ASJC Scopus subject areas
- Surfaces, Coatings and Films
- Instrumentation
- Surfaces and Interfaces
Cite this
High-resolution depth profiling of ultrathin gate oxides using medium-energy ion scattering. / Gustafsson, T.; Lu, H. C.; Busch, B. W.; Schulte, W. H.; Garfunkel, Eric.
In: Nuclear Inst. and Methods in Physics Research, B, Vol. 183, No. 1-2, 07.2001, p. 146-153.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - High-resolution depth profiling of ultrathin gate oxides using medium-energy ion scattering
AU - Gustafsson, T.
AU - Lu, H. C.
AU - Busch, B. W.
AU - Schulte, W. H.
AU - Garfunkel, Eric
PY - 2001/7
Y1 - 2001/7
N2 - Medium-energy ion scattering (MEIS) has been used to characterize the composition of ultrathin gate dielectrics. Examples covering investigations on silicon-oxides and oxynitrides as well as high-dielectric constant (high-K) films on silicon substrates are discussed, with special emphasis on understanding film growth. In the MEIS spectra obtained from ultrathin films, the signals from different oxygen and nitrogen isotopes are well separated. By analyzing samples that have undergone different thermal processing steps in gases of different isotopes, both growth mechanisms and also atomic exchange effects can therefore be monitored directly. For various high-K dielectric films, we found that oxygen-isotope exchange is significant even at temperatures below 500°C. This may point to a serious limitation for the application of such materials as gate dielectrics in semiconductor devices.
AB - Medium-energy ion scattering (MEIS) has been used to characterize the composition of ultrathin gate dielectrics. Examples covering investigations on silicon-oxides and oxynitrides as well as high-dielectric constant (high-K) films on silicon substrates are discussed, with special emphasis on understanding film growth. In the MEIS spectra obtained from ultrathin films, the signals from different oxygen and nitrogen isotopes are well separated. By analyzing samples that have undergone different thermal processing steps in gases of different isotopes, both growth mechanisms and also atomic exchange effects can therefore be monitored directly. For various high-K dielectric films, we found that oxygen-isotope exchange is significant even at temperatures below 500°C. This may point to a serious limitation for the application of such materials as gate dielectrics in semiconductor devices.
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U2 - 10.1016/S0168-583X(00)00619-4
DO - 10.1016/S0168-583X(00)00619-4
M3 - Article
AN - SCOPUS:0035399325
VL - 183
SP - 146
EP - 153
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
SN - 0168-583X
IS - 1-2
ER -