High-resolution elemental profiles were obtained from Si O2 (N) 4H-SiC structures by spatially resolved electron energy-loss spectroscopy (EELS) performed in the scanning transmission electron microscopy mode. The results show that following annealing in NO, N was exclusively incorporated within ~1 nm of the Si O2 (N) 4H-SiC interface. Mean interfacial nitrogen areal densities measured by EELS were ~ (1.0±0.2) × 1015 cm-2 in carbon-face samples and (0.35±0.13) × 1015 cm-2 in Si-face samples; these results are consistent with nuclear reaction analysis measurements. Some of the interface regions in the C-face samples also showed excess carbon that was not removed by the NO annealing process, in contrast with previous results on Si-face samples.
ASJC Scopus subject areas
- Physics and Astronomy(all)