High-resolution elemental profiles of the silicon dioxide4H-silicon carbide interface

K. C. Chang, Y. Cao, L. M. Porter, J. Bentley, S. Dhar, L. C. Feldman, J. R. Williams

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Abstract

High-resolution elemental profiles were obtained from Si O2 (N) 4H-SiC structures by spatially resolved electron energy-loss spectroscopy (EELS) performed in the scanning transmission electron microscopy mode. The results show that following annealing in NO, N was exclusively incorporated within ~1 nm of the Si O2 (N) 4H-SiC interface. Mean interfacial nitrogen areal densities measured by EELS were ~ (1.0±0.2) × 1015 cm-2 in carbon-face samples and (0.35±0.13) × 1015 cm-2 in Si-face samples; these results are consistent with nuclear reaction analysis measurements. Some of the interface regions in the C-face samples also showed excess carbon that was not removed by the NO annealing process, in contrast with previous results on Si-face samples.

Original languageEnglish
Article number104920
JournalJournal of Applied Physics
Volume97
Issue number10
DOIs
Publication statusPublished - May 15 2005

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Chang, K. C., Cao, Y., Porter, L. M., Bentley, J., Dhar, S., Feldman, L. C., & Williams, J. R. (2005). High-resolution elemental profiles of the silicon dioxide4H-silicon carbide interface. Journal of Applied Physics, 97(10), [104920]. https://doi.org/10.1063/1.1904728