High resolution ion scattering study of silicon oxynitridation

H. C. Lu, E. P. Gusev, T. Gustafsson, E. Garfunkel, M. L. Green, D. Brasen, L. C. Feldman

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Abstract

High resolution medium energy ion scattering was used to characterize the nitrogen distribution in ultrathin silicon oxynitrides with sub-nm-accuracy. We show that nitrogen does not incorporate into the subsurface region of the substrate after oxidation of Si(100) in NO. Core-level photoemission experiments show two bonding configurations of nitrogen near the interface. Oxynitridation in N2O results in a lower concentration and a broader distribution of nitrogen than in the NO case.

Original languageEnglish
Pages (from-to)2713-2715
Number of pages3
JournalApplied Physics Letters
Volume69
Issue number18
DOIs
Publication statusPublished - Oct 28 1996

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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