High resolution ion scattering study of silicon oxynitridation

H. C. Lu, E. P. Gusev, T. Gustafsson, Eric Garfunkel, M. L. Green, D. Brasen, Leonard C Feldman

Research output: Contribution to journalArticle

96 Citations (Scopus)

Abstract

High resolution medium energy ion scattering was used to characterize the nitrogen distribution in ultrathin silicon oxynitrides with sub-nm-accuracy. We show that nitrogen does not incorporate into the subsurface region of the substrate after oxidation of Si(100) in NO. Core-level photoemission experiments show two bonding configurations of nitrogen near the interface. Oxynitridation in N2O results in a lower concentration and a broader distribution of nitrogen than in the NO case.

Original languageEnglish
Pages (from-to)2713-2715
Number of pages3
JournalApplied Physics Letters
Volume69
Issue number18
Publication statusPublished - Oct 28 1996

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ion scattering
nitrogen
high resolution
silicon
oxynitrides
low concentrations
photoelectric emission
oxidation
configurations
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Lu, H. C., Gusev, E. P., Gustafsson, T., Garfunkel, E., Green, M. L., Brasen, D., & Feldman, L. C. (1996). High resolution ion scattering study of silicon oxynitridation. Applied Physics Letters, 69(18), 2713-2715.

High resolution ion scattering study of silicon oxynitridation. / Lu, H. C.; Gusev, E. P.; Gustafsson, T.; Garfunkel, Eric; Green, M. L.; Brasen, D.; Feldman, Leonard C.

In: Applied Physics Letters, Vol. 69, No. 18, 28.10.1996, p. 2713-2715.

Research output: Contribution to journalArticle

Lu, HC, Gusev, EP, Gustafsson, T, Garfunkel, E, Green, ML, Brasen, D & Feldman, LC 1996, 'High resolution ion scattering study of silicon oxynitridation', Applied Physics Letters, vol. 69, no. 18, pp. 2713-2715.
Lu HC, Gusev EP, Gustafsson T, Garfunkel E, Green ML, Brasen D et al. High resolution ion scattering study of silicon oxynitridation. Applied Physics Letters. 1996 Oct 28;69(18):2713-2715.
Lu, H. C. ; Gusev, E. P. ; Gustafsson, T. ; Garfunkel, Eric ; Green, M. L. ; Brasen, D. ; Feldman, Leonard C. / High resolution ion scattering study of silicon oxynitridation. In: Applied Physics Letters. 1996 ; Vol. 69, No. 18. pp. 2713-2715.
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