High-resolution soft X-ray photoelectron spectroscopic studies and scanning auger microscopy studies of the air oxidation of alkylated silicon(111) surfaces

Lauren J. Webb, David J. Michalak, Julie S. Biteen, Bruce S. Brunschwig, Ally S Y Chan, David W. Knapp, Harry M. Meyer, Eric J. Nemanick, Matthew C. Traub, Nathan S Lewis

Research output: Contribution to journalArticle

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Abstract

High-resolution soft X-ray photoelectron spectroscopy was used to investigate the oxidation of alkylated silicon(111) surfaces under ambient conditions. Silicon(111) surfaces were functionalized through a two-step route involving radical chlorination of the H-terminated surface followed by alkylation with alkylmagnesium halide reagents. After 24 h in air, surface species representing Si+, Si2+, Si3+, and Si4+ were detected on the Cl-terminated surface, with the highest oxidation state (Si4+) oxide signal appearing at +3.79 eV higher in energy than the bulk Si 2p3/2 peak. The growth of silicon oxide was accompanied by a reduction in the surface-bound Cl signal. After 48 h of exposure to air, the Cl-terminated Si(111) surface exhibited 3.63 equivalent monolyers (ML) of silicon oxides. In contrast, after exposure to air for 48 h, CH3-, C2H5-, or C6H 5CH2-terminated Si surfaces displayed + and Si3+ species with peaks centered at +0.8 and +3.2 eV above the bulk Si 2p3/2 peak, respectively. The silicon 2p SXPS peaks that have previously been assigned to surface Si-C bonds did not change significantly, either in binding energy or in relative intensity, during such air exposure. Use of a high miscut-angle surface (7° vs

Original languageEnglish
Pages (from-to)23450-23459
Number of pages10
JournalJournal of Physical Chemistry B
Volume110
Issue number46
DOIs
Publication statusPublished - Nov 23 2006

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Silicon
Photoelectrons
Microscopic examination
photoelectrons
microscopy
Scanning
X rays
Oxidation
oxidation
scanning
high resolution
air
silicon
Air
x rays
Silicon oxides
silicon oxides
chlorination
Chlorination
alkylation

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry

Cite this

High-resolution soft X-ray photoelectron spectroscopic studies and scanning auger microscopy studies of the air oxidation of alkylated silicon(111) surfaces. / Webb, Lauren J.; Michalak, David J.; Biteen, Julie S.; Brunschwig, Bruce S.; Chan, Ally S Y; Knapp, David W.; Meyer, Harry M.; Nemanick, Eric J.; Traub, Matthew C.; Lewis, Nathan S.

In: Journal of Physical Chemistry B, Vol. 110, No. 46, 23.11.2006, p. 23450-23459.

Research output: Contribution to journalArticle

Webb, LJ, Michalak, DJ, Biteen, JS, Brunschwig, BS, Chan, ASY, Knapp, DW, Meyer, HM, Nemanick, EJ, Traub, MC & Lewis, NS 2006, 'High-resolution soft X-ray photoelectron spectroscopic studies and scanning auger microscopy studies of the air oxidation of alkylated silicon(111) surfaces', Journal of Physical Chemistry B, vol. 110, no. 46, pp. 23450-23459. https://doi.org/10.1021/jp063366s
Webb, Lauren J. ; Michalak, David J. ; Biteen, Julie S. ; Brunschwig, Bruce S. ; Chan, Ally S Y ; Knapp, David W. ; Meyer, Harry M. ; Nemanick, Eric J. ; Traub, Matthew C. ; Lewis, Nathan S. / High-resolution soft X-ray photoelectron spectroscopic studies and scanning auger microscopy studies of the air oxidation of alkylated silicon(111) surfaces. In: Journal of Physical Chemistry B. 2006 ; Vol. 110, No. 46. pp. 23450-23459.
@article{b4b7f0c3cb99492dbb23d10111969ecb,
title = "High-resolution soft X-ray photoelectron spectroscopic studies and scanning auger microscopy studies of the air oxidation of alkylated silicon(111) surfaces",
abstract = "High-resolution soft X-ray photoelectron spectroscopy was used to investigate the oxidation of alkylated silicon(111) surfaces under ambient conditions. Silicon(111) surfaces were functionalized through a two-step route involving radical chlorination of the H-terminated surface followed by alkylation with alkylmagnesium halide reagents. After 24 h in air, surface species representing Si+, Si2+, Si3+, and Si4+ were detected on the Cl-terminated surface, with the highest oxidation state (Si4+) oxide signal appearing at +3.79 eV higher in energy than the bulk Si 2p3/2 peak. The growth of silicon oxide was accompanied by a reduction in the surface-bound Cl signal. After 48 h of exposure to air, the Cl-terminated Si(111) surface exhibited 3.63 equivalent monolyers (ML) of silicon oxides. In contrast, after exposure to air for 48 h, CH3-, C2H5-, or C6H 5CH2-terminated Si surfaces displayed + and Si3+ species with peaks centered at +0.8 and +3.2 eV above the bulk Si 2p3/2 peak, respectively. The silicon 2p SXPS peaks that have previously been assigned to surface Si-C bonds did not change significantly, either in binding energy or in relative intensity, during such air exposure. Use of a high miscut-angle surface (7° vs",
author = "Webb, {Lauren J.} and Michalak, {David J.} and Biteen, {Julie S.} and Brunschwig, {Bruce S.} and Chan, {Ally S Y} and Knapp, {David W.} and Meyer, {Harry M.} and Nemanick, {Eric J.} and Traub, {Matthew C.} and Lewis, {Nathan S}",
year = "2006",
month = "11",
day = "23",
doi = "10.1021/jp063366s",
language = "English",
volume = "110",
pages = "23450--23459",
journal = "Journal of Physical Chemistry B Materials",
issn = "1520-6106",
publisher = "American Chemical Society",
number = "46",

}

TY - JOUR

T1 - High-resolution soft X-ray photoelectron spectroscopic studies and scanning auger microscopy studies of the air oxidation of alkylated silicon(111) surfaces

AU - Webb, Lauren J.

AU - Michalak, David J.

AU - Biteen, Julie S.

AU - Brunschwig, Bruce S.

AU - Chan, Ally S Y

AU - Knapp, David W.

AU - Meyer, Harry M.

AU - Nemanick, Eric J.

AU - Traub, Matthew C.

AU - Lewis, Nathan S

PY - 2006/11/23

Y1 - 2006/11/23

N2 - High-resolution soft X-ray photoelectron spectroscopy was used to investigate the oxidation of alkylated silicon(111) surfaces under ambient conditions. Silicon(111) surfaces were functionalized through a two-step route involving radical chlorination of the H-terminated surface followed by alkylation with alkylmagnesium halide reagents. After 24 h in air, surface species representing Si+, Si2+, Si3+, and Si4+ were detected on the Cl-terminated surface, with the highest oxidation state (Si4+) oxide signal appearing at +3.79 eV higher in energy than the bulk Si 2p3/2 peak. The growth of silicon oxide was accompanied by a reduction in the surface-bound Cl signal. After 48 h of exposure to air, the Cl-terminated Si(111) surface exhibited 3.63 equivalent monolyers (ML) of silicon oxides. In contrast, after exposure to air for 48 h, CH3-, C2H5-, or C6H 5CH2-terminated Si surfaces displayed + and Si3+ species with peaks centered at +0.8 and +3.2 eV above the bulk Si 2p3/2 peak, respectively. The silicon 2p SXPS peaks that have previously been assigned to surface Si-C bonds did not change significantly, either in binding energy or in relative intensity, during such air exposure. Use of a high miscut-angle surface (7° vs

AB - High-resolution soft X-ray photoelectron spectroscopy was used to investigate the oxidation of alkylated silicon(111) surfaces under ambient conditions. Silicon(111) surfaces were functionalized through a two-step route involving radical chlorination of the H-terminated surface followed by alkylation with alkylmagnesium halide reagents. After 24 h in air, surface species representing Si+, Si2+, Si3+, and Si4+ were detected on the Cl-terminated surface, with the highest oxidation state (Si4+) oxide signal appearing at +3.79 eV higher in energy than the bulk Si 2p3/2 peak. The growth of silicon oxide was accompanied by a reduction in the surface-bound Cl signal. After 48 h of exposure to air, the Cl-terminated Si(111) surface exhibited 3.63 equivalent monolyers (ML) of silicon oxides. In contrast, after exposure to air for 48 h, CH3-, C2H5-, or C6H 5CH2-terminated Si surfaces displayed + and Si3+ species with peaks centered at +0.8 and +3.2 eV above the bulk Si 2p3/2 peak, respectively. The silicon 2p SXPS peaks that have previously been assigned to surface Si-C bonds did not change significantly, either in binding energy or in relative intensity, during such air exposure. Use of a high miscut-angle surface (7° vs

UR - http://www.scopus.com/inward/record.url?scp=33846101601&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33846101601&partnerID=8YFLogxK

U2 - 10.1021/jp063366s

DO - 10.1021/jp063366s

M3 - Article

C2 - 17107197

AN - SCOPUS:33846101601

VL - 110

SP - 23450

EP - 23459

JO - Journal of Physical Chemistry B Materials

JF - Journal of Physical Chemistry B Materials

SN - 1520-6106

IS - 46

ER -