High-resolution structural study of Bi on Si(001)

G. E. Franklin; S. Tang; J. C. Woicik; M. J. Bedzyk; Arthur J Freeman; J. A. Golovchenko

doi:10.1103/PhysRevB.52.R5515

High-resolution structural study of Bi on Si(001)

G. E. Franklin, S. Tang, J. C. Woicik, M. J. Bedzyk, Arthur J Freeman, J. A. Golovchenko

Northwestern University

Research output: Contribution to journal › Article

26 Citations (Scopus)

Abstract

X-ray standing-wave measurements, along with first-principles local-density molecular-cluster calculations, have determined the Bi-dimer orientation, location, and bond length for the Si(001)-(1×2):Bi surface. The results for Bi directly scale with the covalent radii and with adsorption characteristics of other group-V elements (As and Sb) on Si(001).

Original language	English
Journal	Physical Review B
Volume	52
Issue number	8
DOIs	https://doi.org/10.1103/PhysRevB.52.R5515
Publication status	Published - 1995

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ASJC Scopus subject areas

Condensed Matter Physics

Cite this

Franklin, G. E., Tang, S., Woicik, J. C., Bedzyk, M. J., Freeman, A. J., & Golovchenko, J. A. (1995). High-resolution structural study of Bi on Si(001). Physical Review B, 52(8). https://doi.org/10.1103/PhysRevB.52.R5515

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Access to Document

10.1103/PhysRevB.52.R5515