High-resolution structural study of Bi on Si(001)

G. E. Franklin, S. Tang, J. C. Woicik, M. J. Bedzyk, Arthur J Freeman, J. A. Golovchenko

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

X-ray standing-wave measurements, along with first-principles local-density molecular-cluster calculations, have determined the Bi-dimer orientation, location, and bond length for the Si(001)-(1×2):Bi surface. The results for Bi directly scale with the covalent radii and with adsorption characteristics of other group-V elements (As and Sb) on Si(001).

Original languageEnglish
JournalPhysical Review B
Volume52
Issue number8
DOIs
Publication statusPublished - 1995

Fingerprint

molecular clusters
Bond length
standing waves
Dimers
dimers
Adsorption
X rays
adsorption
radii
high resolution
x rays

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Franklin, G. E., Tang, S., Woicik, J. C., Bedzyk, M. J., Freeman, A. J., & Golovchenko, J. A. (1995). High-resolution structural study of Bi on Si(001). Physical Review B, 52(8). https://doi.org/10.1103/PhysRevB.52.R5515

High-resolution structural study of Bi on Si(001). / Franklin, G. E.; Tang, S.; Woicik, J. C.; Bedzyk, M. J.; Freeman, Arthur J; Golovchenko, J. A.

In: Physical Review B, Vol. 52, No. 8, 1995.

Research output: Contribution to journalArticle

Franklin, GE, Tang, S, Woicik, JC, Bedzyk, MJ, Freeman, AJ & Golovchenko, JA 1995, 'High-resolution structural study of Bi on Si(001)', Physical Review B, vol. 52, no. 8. https://doi.org/10.1103/PhysRevB.52.R5515
Franklin, G. E. ; Tang, S. ; Woicik, J. C. ; Bedzyk, M. J. ; Freeman, Arthur J ; Golovchenko, J. A. / High-resolution structural study of Bi on Si(001). In: Physical Review B. 1995 ; Vol. 52, No. 8.
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