High-temperature thermoelectric properties of n-type PbSe doped with Ga, In, and Pb

John Androulakis, Yeseul Lee, Iliya Todorov, Duck Young Chung, Mercouri G Kanatzidis

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Abstract

We report a systematic study of the thermoelectric properties of PbSe doped with Ga, In, and excess Pb as a function of carrier density and temperature. All metal dopants efficiently generate electron carriers in the crystal lattice with densities as high as ~1020 cm-3 measured by the Hall effect. The Seebeck coefficient as a function of carrier density at room temperature was found to be similar for all dopants, while at 700 K substantial differences were observed with PbSe-In exhibiting a larger response. Infrared spectral reflectivity measurements at room temperature showed that both Ga and In substitution in PbSe weakens the curvature of the dispersion relation of the conduction band compared to Pb. This electronic effect contributes a larger density of states in transport processes at high temperatures. We have obtained thermoelectric figures of merit of ~0.9 at 900 K, exceeding that of PbTe for T>800 K.

Original languageEnglish
Article number195209
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume83
Issue number19
DOIs
Publication statusPublished - May 31 2011

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room temperature
Seebeck effect
crystal lattices
figure of merit
Carrier concentration
Hall effect
conduction bands
curvature
Doping (additives)
substitutes
reflectance
Temperature
Seebeck coefficient
Conduction bands
electronics
Crystal lattices
metals
electrons
Substitution reactions
Metals

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

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High-temperature thermoelectric properties of n-type PbSe doped with Ga, In, and Pb. / Androulakis, John; Lee, Yeseul; Todorov, Iliya; Chung, Duck Young; Kanatzidis, Mercouri G.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 83, No. 19, 195209, 31.05.2011.

Research output: Contribution to journalArticle

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