High-temperature transport and defect studies of quadruple perovskites

La2Ba2Cu2Sn2O11, Eu2Ba2Cu2Ti2O11, and La2Ba2Cu2Ti2O11

P. A. Salvador, L. Shen, Thomas O Mason, K. B. Greenwood, Kenneth R Poeppelmeier

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

High temperature electrical conductivity and Seebeck coefficient measurements were performed on the quadruple perovskites La2Ba2Cu2Sn2O11, Eu2Ba2Cu2Ti2O11, and La2Ba2Cu2Ti2O11. A transition from n- to p-type semiconductivity is observed for La2Ba2Cu2Sn2O11 as a function of oxygen partial pressure. However, both electrons and holes contribute to the electrical properties over the entire range of experimental conditions. Both Eu2Ba2Cu2Ti2O11 and La2Ba2Cu2Ti2O11 display p-type extrinsic semiconductivity at high oxygen partial pressures and low temperatures. A transition to lightly doped p-type, intrinsic semiconductivity occurs at low oxygen partial pressures and high temperatures. Combined conductivity and thermopower (Jonker) analysis was employed to elucidate the defect structure and the conduction parameters in these compounds. The similarity of these materials to high-Tc cuprates is discussed.

Original languageEnglish
Pages (from-to)80-89
Number of pages10
JournalJournal of Solid State Chemistry
Volume119
Issue number1
DOIs
Publication statusPublished - 1995

Fingerprint

perovskites
Partial pressure
partial pressure
Oxygen
Defects
defects
oxygen
Seebeck coefficient
Defect structures
Thermoelectric power
Seebeck effect
Temperature
cuprates
Electric properties
electrical properties
conduction
conductivity
electrical resistivity
temperature
Electrons

ASJC Scopus subject areas

  • Inorganic Chemistry
  • Physical and Theoretical Chemistry
  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics

Cite this

High-temperature transport and defect studies of quadruple perovskites : La2Ba2Cu2Sn2O11, Eu2Ba2Cu2Ti2O11, and La2Ba2Cu2Ti2O11. / Salvador, P. A.; Shen, L.; Mason, Thomas O; Greenwood, K. B.; Poeppelmeier, Kenneth R.

In: Journal of Solid State Chemistry, Vol. 119, No. 1, 1995, p. 80-89.

Research output: Contribution to journalArticle

@article{3513d32a71fe47e88a5defc642b86ebf,
title = "High-temperature transport and defect studies of quadruple perovskites: La2Ba2Cu2Sn2O11, Eu2Ba2Cu2Ti2O11, and La2Ba2Cu2Ti2O11",
abstract = "High temperature electrical conductivity and Seebeck coefficient measurements were performed on the quadruple perovskites La2Ba2Cu2Sn2O11, Eu2Ba2Cu2Ti2O11, and La2Ba2Cu2Ti2O11. A transition from n- to p-type semiconductivity is observed for La2Ba2Cu2Sn2O11 as a function of oxygen partial pressure. However, both electrons and holes contribute to the electrical properties over the entire range of experimental conditions. Both Eu2Ba2Cu2Ti2O11 and La2Ba2Cu2Ti2O11 display p-type extrinsic semiconductivity at high oxygen partial pressures and low temperatures. A transition to lightly doped p-type, intrinsic semiconductivity occurs at low oxygen partial pressures and high temperatures. Combined conductivity and thermopower (Jonker) analysis was employed to elucidate the defect structure and the conduction parameters in these compounds. The similarity of these materials to high-Tc cuprates is discussed.",
author = "Salvador, {P. A.} and L. Shen and Mason, {Thomas O} and Greenwood, {K. B.} and Poeppelmeier, {Kenneth R}",
year = "1995",
doi = "10.1016/0022-4596(95)80012-E",
language = "English",
volume = "119",
pages = "80--89",
journal = "Journal of Solid State Chemistry",
issn = "0022-4596",
publisher = "Academic Press Inc.",
number = "1",

}

TY - JOUR

T1 - High-temperature transport and defect studies of quadruple perovskites

T2 - La2Ba2Cu2Sn2O11, Eu2Ba2Cu2Ti2O11, and La2Ba2Cu2Ti2O11

AU - Salvador, P. A.

AU - Shen, L.

AU - Mason, Thomas O

AU - Greenwood, K. B.

AU - Poeppelmeier, Kenneth R

PY - 1995

Y1 - 1995

N2 - High temperature electrical conductivity and Seebeck coefficient measurements were performed on the quadruple perovskites La2Ba2Cu2Sn2O11, Eu2Ba2Cu2Ti2O11, and La2Ba2Cu2Ti2O11. A transition from n- to p-type semiconductivity is observed for La2Ba2Cu2Sn2O11 as a function of oxygen partial pressure. However, both electrons and holes contribute to the electrical properties over the entire range of experimental conditions. Both Eu2Ba2Cu2Ti2O11 and La2Ba2Cu2Ti2O11 display p-type extrinsic semiconductivity at high oxygen partial pressures and low temperatures. A transition to lightly doped p-type, intrinsic semiconductivity occurs at low oxygen partial pressures and high temperatures. Combined conductivity and thermopower (Jonker) analysis was employed to elucidate the defect structure and the conduction parameters in these compounds. The similarity of these materials to high-Tc cuprates is discussed.

AB - High temperature electrical conductivity and Seebeck coefficient measurements were performed on the quadruple perovskites La2Ba2Cu2Sn2O11, Eu2Ba2Cu2Ti2O11, and La2Ba2Cu2Ti2O11. A transition from n- to p-type semiconductivity is observed for La2Ba2Cu2Sn2O11 as a function of oxygen partial pressure. However, both electrons and holes contribute to the electrical properties over the entire range of experimental conditions. Both Eu2Ba2Cu2Ti2O11 and La2Ba2Cu2Ti2O11 display p-type extrinsic semiconductivity at high oxygen partial pressures and low temperatures. A transition to lightly doped p-type, intrinsic semiconductivity occurs at low oxygen partial pressures and high temperatures. Combined conductivity and thermopower (Jonker) analysis was employed to elucidate the defect structure and the conduction parameters in these compounds. The similarity of these materials to high-Tc cuprates is discussed.

UR - http://www.scopus.com/inward/record.url?scp=0001798564&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001798564&partnerID=8YFLogxK

U2 - 10.1016/0022-4596(95)80012-E

DO - 10.1016/0022-4596(95)80012-E

M3 - Article

VL - 119

SP - 80

EP - 89

JO - Journal of Solid State Chemistry

JF - Journal of Solid State Chemistry

SN - 0022-4596

IS - 1

ER -