Abstract
Herein, we report a significantly improved thermoelectric figure of merit ZT of ∼1.1 at ∼923 K in p-type SnTe through In2Te3 alloying and iodine doping. We propose that the introduction of indium at Sn sites in SnTe creates resonant levels inside the valence bands, thereby considerably increasing the Seebeck coefficients and power factors in the low-to-middle temperature range. Unlike SnTe-InTe, the SnTe-In2Te3 system displays much lower lattice thermal conductivity. Utilizing a model for point defect scattering, we analyze the origin of the low thermal conductivity in SnTe-In2Te3 and attribute it mainly to the strong vacancy originated phonon scattering between Sn atoms and the vacancies introduced by In2Te3 alloying and partly to the interfacial scattering by In-rich nanoprecipitates present in SnTe matrix. By alloying only In2Te3 with SnTe, a ZT value of ∼0.9 at 923 K was achieved. ZT can be further increased to ∼1.1 at 923 K through adjusting the charge carriers by iodine doping at Te sites.
| Original language | English |
|---|---|
| Pages (from-to) | 7801-7811 |
| Number of pages | 11 |
| Journal | Chemistry of Materials |
| Volume | 27 |
| Issue number | 22 |
| DOIs | |
| Publication status | Published - Nov 6 2015 |
Fingerprint
ASJC Scopus subject areas
- Materials Chemistry
- Chemical Engineering(all)
- Chemistry(all)
Cite this
High Thermoelectric Performance SnTe-In2Te3 Solid Solutions Enabled by Resonant Levels and Strong Vacancy Phonon Scattering. / Tan, Gangjian; Zeier, Wolfgang G.; Shi, Fengyuan; Wang, Pengli; Snyder, G. Jeffery; Dravid, Vinayak P.; Kanatzidis, Mercouri G.
In: Chemistry of Materials, Vol. 27, No. 22, 06.11.2015, p. 7801-7811.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - High Thermoelectric Performance SnTe-In2Te3 Solid Solutions Enabled by Resonant Levels and Strong Vacancy Phonon Scattering
AU - Tan, Gangjian
AU - Zeier, Wolfgang G.
AU - Shi, Fengyuan
AU - Wang, Pengli
AU - Snyder, G. Jeffery
AU - Dravid, Vinayak P.
AU - Kanatzidis, Mercouri G
PY - 2015/11/6
Y1 - 2015/11/6
N2 - Herein, we report a significantly improved thermoelectric figure of merit ZT of ∼1.1 at ∼923 K in p-type SnTe through In2Te3 alloying and iodine doping. We propose that the introduction of indium at Sn sites in SnTe creates resonant levels inside the valence bands, thereby considerably increasing the Seebeck coefficients and power factors in the low-to-middle temperature range. Unlike SnTe-InTe, the SnTe-In2Te3 system displays much lower lattice thermal conductivity. Utilizing a model for point defect scattering, we analyze the origin of the low thermal conductivity in SnTe-In2Te3 and attribute it mainly to the strong vacancy originated phonon scattering between Sn atoms and the vacancies introduced by In2Te3 alloying and partly to the interfacial scattering by In-rich nanoprecipitates present in SnTe matrix. By alloying only In2Te3 with SnTe, a ZT value of ∼0.9 at 923 K was achieved. ZT can be further increased to ∼1.1 at 923 K through adjusting the charge carriers by iodine doping at Te sites.
AB - Herein, we report a significantly improved thermoelectric figure of merit ZT of ∼1.1 at ∼923 K in p-type SnTe through In2Te3 alloying and iodine doping. We propose that the introduction of indium at Sn sites in SnTe creates resonant levels inside the valence bands, thereby considerably increasing the Seebeck coefficients and power factors in the low-to-middle temperature range. Unlike SnTe-InTe, the SnTe-In2Te3 system displays much lower lattice thermal conductivity. Utilizing a model for point defect scattering, we analyze the origin of the low thermal conductivity in SnTe-In2Te3 and attribute it mainly to the strong vacancy originated phonon scattering between Sn atoms and the vacancies introduced by In2Te3 alloying and partly to the interfacial scattering by In-rich nanoprecipitates present in SnTe matrix. By alloying only In2Te3 with SnTe, a ZT value of ∼0.9 at 923 K was achieved. ZT can be further increased to ∼1.1 at 923 K through adjusting the charge carriers by iodine doping at Te sites.
UR - http://www.scopus.com/inward/record.url?scp=84948176432&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84948176432&partnerID=8YFLogxK
U2 - 10.1021/acs.chemmater.5b03708
DO - 10.1021/acs.chemmater.5b03708
M3 - Article
AN - SCOPUS:84948176432
VL - 27
SP - 7801
EP - 7811
JO - Chemistry of Materials
JF - Chemistry of Materials
SN - 0897-4756
IS - 22
ER -