High Tc Y‐Ba‐Cu‐O Thin Films Prepared by DC Magnetron Sputtering

B. Y. Jin, S. J. Lee, S. N. Song, S. ‐J Hwu, J. Thiel, Kenneth R Poeppelmeier, J. B. Ketterson

Research output: Contribution to journal › Article

5 Citations (Scopus)

Abstract

Y‐Ba‐Cu‐O thin films with an onset Tc as high as 96K have been prepared by the DC magnetron sputtering method. The highest temperature for zero resistivity is currently around 45K. The effects of the preparation parameters and the post‐annealing treatments on Tc are reported. 1987 The American Ceramic Society

Original languageEnglish
Pages (from-to)436-443
Number of pages8
JournalJournal of the American Ceramic Society
Volume2
Issue number3 B
DOIs
Publication statusPublished - 1987

Fingerprint

Magnetron sputtering
Thin films
Temperature

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry

Cite this

High Tc Y‐Ba‐Cu‐O Thin Films Prepared by DC Magnetron Sputtering. / Jin, B. Y.; Lee, S. J.; Song, S. N.; Hwu, S. ‐J; Thiel, J.; Poeppelmeier, Kenneth R; Ketterson, J. B.

In: Journal of the American Ceramic Society, Vol. 2, No. 3 B, 1987, p. 436-443.

Research output: Contribution to journal › Article

Jin, BY, Lee, SJ, Song, SN, Hwu, SJ, Thiel, J, Poeppelmeier, KR & Ketterson, JB 1987, 'High Tc Y‐Ba‐Cu‐O Thin Films Prepared by DC Magnetron Sputtering', Journal of the American Ceramic Society, vol. 2, no. 3 B, pp. 436-443. https://doi.org/10.1111/j.1551-2916.1987.tb00108.x
Jin BY, Lee SJ, Song SN, Hwu SJ, Thiel J, Poeppelmeier KR et al. High Tc Y‐Ba‐Cu‐O Thin Films Prepared by DC Magnetron Sputtering. Journal of the American Ceramic Society. 1987;2(3 B):436-443. https://doi.org/10.1111/j.1551-2916.1987.tb00108.x
Jin, B. Y. ; Lee, S. J. ; Song, S. N. ; Hwu, S. ‐J ; Thiel, J. ; Poeppelmeier, Kenneth R ; Ketterson, J. B. / High Tc Y‐Ba‐Cu‐O Thin Films Prepared by DC Magnetron Sputtering. In: Journal of the American Ceramic Society. 1987 ; Vol. 2, No. 3 B. pp. 436-443.
@article{b8b18d9b33164a198992ec58492fa7c1,
title = "High Tc Y‐Ba‐Cu‐O Thin Films Prepared by DC Magnetron Sputtering",
abstract = "Y‐Ba‐Cu‐O thin films with an onset Tc as high as 96K have been prepared by the DC magnetron sputtering method. The highest temperature for zero resistivity is currently around 45K. The effects of the preparation parameters and the post‐annealing treatments on Tc are reported. 1987 The American Ceramic Society",
author = "Jin, {B. Y.} and Lee, {S. J.} and Song, {S. N.} and Hwu, {S. ‐J} and J. Thiel and Poeppelmeier, {Kenneth R} and Ketterson, {J. B.}",
year = "1987",
doi = "10.1111/j.1551-2916.1987.tb00108.x",
language = "English",
volume = "2",
pages = "436--443",
journal = "Journal of the American Ceramic Society",
issn = "0002-7820",
publisher = "Wiley-Blackwell",
number = "3 B",

}

TY - JOUR

T1 - High Tc Y‐Ba‐Cu‐O Thin Films Prepared by DC Magnetron Sputtering

AU - Jin, B. Y.

AU - Lee, S. J.

AU - Song, S. N.

AU - Hwu, S. ‐J

AU - Thiel, J.

AU - Poeppelmeier, Kenneth R

AU - Ketterson, J. B.

PY - 1987

Y1 - 1987

N2 - Y‐Ba‐Cu‐O thin films with an onset Tc as high as 96K have been prepared by the DC magnetron sputtering method. The highest temperature for zero resistivity is currently around 45K. The effects of the preparation parameters and the post‐annealing treatments on Tc are reported. 1987 The American Ceramic Society

AB - Y‐Ba‐Cu‐O thin films with an onset Tc as high as 96K have been prepared by the DC magnetron sputtering method. The highest temperature for zero resistivity is currently around 45K. The effects of the preparation parameters and the post‐annealing treatments on Tc are reported. 1987 The American Ceramic Society

UR - http://www.scopus.com/inward/record.url?scp=84985140519&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84985140519&partnerID=8YFLogxK

U2 - 10.1111/j.1551-2916.1987.tb00108.x

DO - 10.1111/j.1551-2916.1987.tb00108.x

M3 - Article

AN - SCOPUS:84985140519

VL - 2

SP - 436

EP - 443

JO - Journal of the American Ceramic Society

JF - Journal of the American Ceramic Society

SN - 0002-7820

IS - 3 B

ER -

Access to Document