Highly conductive epitaxial Cdo thin films prepared by pulsed laser deposition

M. Yan; M. Lane; C. R. Kannewurf; Robert P. H. Chang

doi:10.1063/1.1365410

Highly conductive epitaxial Cdo thin films prepared by pulsed laser deposition

M. Yan, M. Lane, C. R. Kannewurf, Robert P. H. Chang

Northwestern University

Research output: Contribution to journal › Article › peer-review

306 Citations (Scopus)

Abstract

Epitaxial growth of both pure and doped CdO thin films has been achieved on MgO (111) substrates using pulsed laser deposition. A maximum conductivity of 42 000 S/cm with mobility of 609 cm²/V s is achieved when the CdO epitaxial film is doped with 2.5% Sn. The pure CdO epitaxial film has a band gap of 2.4 eV. The band gap increases with doping and reaches a maximum of 2.87 eV when the doping level is 6.2%. Both grain boundary scattering and ionized impurity scattering are found to contribute to the mobility of CdO films.

Original language	English
Pages (from-to)	2342-2344
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	16
DOIs	https://doi.org/10.1063/1.1365410
Publication status	Published - Apr 16 2001

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1365410

Fingerprint Dive into the research topics of 'Highly conductive epitaxial Cdo thin films prepared by pulsed laser deposition'. Together they form a unique fingerprint.

Cite this

@article{eb777177fb814dbbb6f3ce169c9ad44d,

title = "Highly conductive epitaxial Cdo thin films prepared by pulsed laser deposition",

abstract = "Epitaxial growth of both pure and doped CdO thin films has been achieved on MgO (111) substrates using pulsed laser deposition. A maximum conductivity of 42 000 S/cm with mobility of 609 cm2/V s is achieved when the CdO epitaxial film is doped with 2.5% Sn. The pure CdO epitaxial film has a band gap of 2.4 eV. The band gap increases with doping and reaches a maximum of 2.87 eV when the doping level is 6.2%. Both grain boundary scattering and ionized impurity scattering are found to contribute to the mobility of CdO films.",

author = "M. Yan and M. Lane and Kannewurf, {C. R.} and Chang, {Robert P. H.}",

year = "2001",

month = apr,

day = "16",

doi = "10.1063/1.1365410",

language = "English",

volume = "78",

pages = "2342--2344",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "16",

}

TY - JOUR

T1 - Highly conductive epitaxial Cdo thin films prepared by pulsed laser deposition

AU - Yan, M.

AU - Lane, M.

AU - Kannewurf, C. R.

AU - Chang, Robert P. H.

PY - 2001/4/16

Y1 - 2001/4/16

N2 - Epitaxial growth of both pure and doped CdO thin films has been achieved on MgO (111) substrates using pulsed laser deposition. A maximum conductivity of 42 000 S/cm with mobility of 609 cm2/V s is achieved when the CdO epitaxial film is doped with 2.5% Sn. The pure CdO epitaxial film has a band gap of 2.4 eV. The band gap increases with doping and reaches a maximum of 2.87 eV when the doping level is 6.2%. Both grain boundary scattering and ionized impurity scattering are found to contribute to the mobility of CdO films.

AB - Epitaxial growth of both pure and doped CdO thin films has been achieved on MgO (111) substrates using pulsed laser deposition. A maximum conductivity of 42 000 S/cm with mobility of 609 cm2/V s is achieved when the CdO epitaxial film is doped with 2.5% Sn. The pure CdO epitaxial film has a band gap of 2.4 eV. The band gap increases with doping and reaches a maximum of 2.87 eV when the doping level is 6.2%. Both grain boundary scattering and ionized impurity scattering are found to contribute to the mobility of CdO films.

UR - http://www.scopus.com/inward/record.url?scp=0035896796&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035896796&partnerID=8YFLogxK

U2 - 10.1063/1.1365410

DO - 10.1063/1.1365410

M3 - Article

AN - SCOPUS:0035896796

VL - 78

SP - 2342

EP - 2344

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 16

ER -