Abstract
Epitaxial growth of both pure and doped CdO thin films has been achieved on MgO (111) substrates using pulsed laser deposition. A maximum conductivity of 42 000 S/cm with mobility of 609 cm2/V s is achieved when the CdO epitaxial film is doped with 2.5% Sn. The pure CdO epitaxial film has a band gap of 2.4 eV. The band gap increases with doping and reaches a maximum of 2.87 eV when the doping level is 6.2%. Both grain boundary scattering and ionized impurity scattering are found to contribute to the mobility of CdO films.
| Original language | English |
|---|---|
| Pages (from-to) | 2342-2344 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 78 |
| Issue number | 16 |
| DOIs | |
| Publication status | Published - Apr 16 2001 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Highly conductive epitaxial Cdo thin films prepared by pulsed laser deposition. / Yan, M.; Lane, M.; Kannewurf, C. R.; Chang, Robert P. H.
In: Applied Physics Letters, Vol. 78, No. 16, 16.04.2001, p. 2342-2344.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Highly conductive epitaxial Cdo thin films prepared by pulsed laser deposition
AU - Yan, M.
AU - Lane, M.
AU - Kannewurf, C. R.
AU - Chang, Robert P. H.
PY - 2001/4/16
Y1 - 2001/4/16
N2 - Epitaxial growth of both pure and doped CdO thin films has been achieved on MgO (111) substrates using pulsed laser deposition. A maximum conductivity of 42 000 S/cm with mobility of 609 cm2/V s is achieved when the CdO epitaxial film is doped with 2.5% Sn. The pure CdO epitaxial film has a band gap of 2.4 eV. The band gap increases with doping and reaches a maximum of 2.87 eV when the doping level is 6.2%. Both grain boundary scattering and ionized impurity scattering are found to contribute to the mobility of CdO films.
AB - Epitaxial growth of both pure and doped CdO thin films has been achieved on MgO (111) substrates using pulsed laser deposition. A maximum conductivity of 42 000 S/cm with mobility of 609 cm2/V s is achieved when the CdO epitaxial film is doped with 2.5% Sn. The pure CdO epitaxial film has a band gap of 2.4 eV. The band gap increases with doping and reaches a maximum of 2.87 eV when the doping level is 6.2%. Both grain boundary scattering and ionized impurity scattering are found to contribute to the mobility of CdO films.
UR - http://www.scopus.com/inward/record.url?scp=0035896796&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0035896796&partnerID=8YFLogxK
U2 - 10.1063/1.1365410
DO - 10.1063/1.1365410
M3 - Article
AN - SCOPUS:0035896796
VL - 78
SP - 2342
EP - 2344
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 16
ER -