Abstract
Epitaxial growth of both pure and doped CdO thin films has been achieved on MgO (111) substrates using pulsed laser deposition. A maximum conductivity of 42 000 S/cm with mobility of 609 cm2/V s is achieved when the CdO epitaxial film is doped with 2.5% Sn. The pure CdO epitaxial film has a band gap of 2.4 eV. The band gap increases with doping and reaches a maximum of 2.87 eV when the doping level is 6.2%. Both grain boundary scattering and ionized impurity scattering are found to contribute to the mobility of CdO films.
| Original language | English |
|---|---|
| Pages (from-to) | 2342-2344 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 78 |
| Issue number | 16 |
| DOIs | |
| Publication status | Published - Apr 16 2001 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Yan, M., Lane, M., Kannewurf, C. R., & Chang, R. P. H. (2001). Highly conductive epitaxial Cdo thin films prepared by pulsed laser deposition. Applied Physics Letters, 78(16), 2342-2344. https://doi.org/10.1063/1.1365410