Highly conductive epitaxial Cdo thin films prepared by pulsed laser deposition

M. Yan, M. Lane, C. R. Kannewurf, Robert P. H. Chang

Research output: Contribution to journalArticle

291 Citations (Scopus)

Abstract

Epitaxial growth of both pure and doped CdO thin films has been achieved on MgO (111) substrates using pulsed laser deposition. A maximum conductivity of 42 000 S/cm with mobility of 609 cm2/V s is achieved when the CdO epitaxial film is doped with 2.5% Sn. The pure CdO epitaxial film has a band gap of 2.4 eV. The band gap increases with doping and reaches a maximum of 2.87 eV when the doping level is 6.2%. Both grain boundary scattering and ionized impurity scattering are found to contribute to the mobility of CdO films.

Original languageEnglish
Pages (from-to)2342-2344
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number16
DOIs
Publication statusPublished - Apr 16 2001

    Fingerprint

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this