Highly conductive epitaxial Cdo thin films prepared by pulsed laser deposition

M. Yan, M. Lane, C. R. Kannewurf, Robert P. H. Chang

Research output: Contribution to journalArticle

274 Citations (Scopus)

Abstract

Epitaxial growth of both pure and doped CdO thin films has been achieved on MgO (111) substrates using pulsed laser deposition. A maximum conductivity of 42 000 S/cm with mobility of 609 cm2/V s is achieved when the CdO epitaxial film is doped with 2.5% Sn. The pure CdO epitaxial film has a band gap of 2.4 eV. The band gap increases with doping and reaches a maximum of 2.87 eV when the doping level is 6.2%. Both grain boundary scattering and ionized impurity scattering are found to contribute to the mobility of CdO films.

Original languageEnglish
Pages (from-to)2342-2344
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number16
DOIs
Publication statusPublished - Apr 16 2001

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pulsed laser deposition
thin films
scattering
grain boundaries
impurities
conductivity

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Highly conductive epitaxial Cdo thin films prepared by pulsed laser deposition. / Yan, M.; Lane, M.; Kannewurf, C. R.; Chang, Robert P. H.

In: Applied Physics Letters, Vol. 78, No. 16, 16.04.2001, p. 2342-2344.

Research output: Contribution to journalArticle

Yan, M. ; Lane, M. ; Kannewurf, C. R. ; Chang, Robert P. H. / Highly conductive epitaxial Cdo thin films prepared by pulsed laser deposition. In: Applied Physics Letters. 2001 ; Vol. 78, No. 16. pp. 2342-2344.
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