Highly transparent and conductive double-layer oxide thin films as anodes for organic light-emitting diodes

Yu Yang; Lian Wang; He Yan; Shu Jin; Tobin J. Marks; Shuyou Li

doi:10.1063/1.2240110

Highly transparent and conductive double-layer oxide thin films as anodes for organic light-emitting diodes

Yu Yang, Lian Wang, He Yan, Shu Jin, Tobin J. Marks, Shuyou Li

Northwestern University

Research output: Contribution to journal › Article › peer-review

62 Citations (Scopus)

Abstract

Double-layer transparent conducting oxide thin film structures containing In-doped CdO (CIO) and Sn-doped In ₂O ₃ (ITO) layers were grown on glass by metal-organic chemical vapor deposition and ion-assisted deposition (IAD), respectively, and used as anodes for polymer light-emitting diodes (PLEDs). These films have a very low overall In content of 16 at.%. For 180-nm-thick CIO/ITO films, the sheet resistance is 5.6 Ω/, and the average optical transmittance is 87.1% in the 400-700 nm region. The overall figure of merit (Φ=T ¹⁰/R _sheet) of the double-layer CIO/ITO films is significantly greater than that of single-layer CIO, IAD-ITO, and commercial ITO films. CIO/ITO-based PLEDs exhibit comparable or superior device performance versus ITO-based control devices. CIO/ITO materials have a much lower sheet resistance than ITO, rendering them promising low In content electrode materials for large-area optoelectronic devices.

Original language	English
Article number	051116
Journal	Applied Physics Letters
Volume	89
Issue number	5
DOIs	https://doi.org/10.1063/1.2240110
Publication status	Published - 2006

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Highly transparent and conductive double-layer oxide thin films as anodes for organic light-emitting diodes",

abstract = "Double-layer transparent conducting oxide thin film structures containing In-doped CdO (CIO) and Sn-doped In 2O 3 (ITO) layers were grown on glass by metal-organic chemical vapor deposition and ion-assisted deposition (IAD), respectively, and used as anodes for polymer light-emitting diodes (PLEDs). These films have a very low overall In content of 16 at.%. For 180-nm-thick CIO/ITO films, the sheet resistance is 5.6 Ω/, and the average optical transmittance is 87.1% in the 400-700 nm region. The overall figure of merit (Φ=T 10/R sheet) of the double-layer CIO/ITO films is significantly greater than that of single-layer CIO, IAD-ITO, and commercial ITO films. CIO/ITO-based PLEDs exhibit comparable or superior device performance versus ITO-based control devices. CIO/ITO materials have a much lower sheet resistance than ITO, rendering them promising low In content electrode materials for large-area optoelectronic devices.",

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AU - Yang, Yu

AU - Wang, Lian

AU - Yan, He

AU - Jin, Shu

AU - Marks, Tobin J.

AU - Li, Shuyou

PY - 2006

Y1 - 2006

N2 - Double-layer transparent conducting oxide thin film structures containing In-doped CdO (CIO) and Sn-doped In 2O 3 (ITO) layers were grown on glass by metal-organic chemical vapor deposition and ion-assisted deposition (IAD), respectively, and used as anodes for polymer light-emitting diodes (PLEDs). These films have a very low overall In content of 16 at.%. For 180-nm-thick CIO/ITO films, the sheet resistance is 5.6 Ω/, and the average optical transmittance is 87.1% in the 400-700 nm region. The overall figure of merit (Φ=T 10/R sheet) of the double-layer CIO/ITO films is significantly greater than that of single-layer CIO, IAD-ITO, and commercial ITO films. CIO/ITO-based PLEDs exhibit comparable or superior device performance versus ITO-based control devices. CIO/ITO materials have a much lower sheet resistance than ITO, rendering them promising low In content electrode materials for large-area optoelectronic devices.

AB - Double-layer transparent conducting oxide thin film structures containing In-doped CdO (CIO) and Sn-doped In 2O 3 (ITO) layers were grown on glass by metal-organic chemical vapor deposition and ion-assisted deposition (IAD), respectively, and used as anodes for polymer light-emitting diodes (PLEDs). These films have a very low overall In content of 16 at.%. For 180-nm-thick CIO/ITO films, the sheet resistance is 5.6 Ω/, and the average optical transmittance is 87.1% in the 400-700 nm region. The overall figure of merit (Φ=T 10/R sheet) of the double-layer CIO/ITO films is significantly greater than that of single-layer CIO, IAD-ITO, and commercial ITO films. CIO/ITO-based PLEDs exhibit comparable or superior device performance versus ITO-based control devices. CIO/ITO materials have a much lower sheet resistance than ITO, rendering them promising low In content electrode materials for large-area optoelectronic devices.

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