TY - JOUR
T1 - Highly transparent and conductive double-layer oxide thin films as anodes for organic light-emitting diodes
AU - Yang, Yu
AU - Wang, Lian
AU - Yan, He
AU - Jin, Shu
AU - Marks, Tobin J.
AU - Li, Shuyou
PY - 2006/9/14
Y1 - 2006/9/14
N2 - Double-layer transparent conducting oxide thin film structures containing In-doped CdO (CIO) and Sn-doped In 2O 3 (ITO) layers were grown on glass by metal-organic chemical vapor deposition and ion-assisted deposition (IAD), respectively, and used as anodes for polymer light-emitting diodes (PLEDs). These films have a very low overall In content of 16 at.%. For 180-nm-thick CIO/ITO films, the sheet resistance is 5.6 Ω/, and the average optical transmittance is 87.1% in the 400-700 nm region. The overall figure of merit (Φ=T 10/R sheet) of the double-layer CIO/ITO films is significantly greater than that of single-layer CIO, IAD-ITO, and commercial ITO films. CIO/ITO-based PLEDs exhibit comparable or superior device performance versus ITO-based control devices. CIO/ITO materials have a much lower sheet resistance than ITO, rendering them promising low In content electrode materials for large-area optoelectronic devices.
AB - Double-layer transparent conducting oxide thin film structures containing In-doped CdO (CIO) and Sn-doped In 2O 3 (ITO) layers were grown on glass by metal-organic chemical vapor deposition and ion-assisted deposition (IAD), respectively, and used as anodes for polymer light-emitting diodes (PLEDs). These films have a very low overall In content of 16 at.%. For 180-nm-thick CIO/ITO films, the sheet resistance is 5.6 Ω/, and the average optical transmittance is 87.1% in the 400-700 nm region. The overall figure of merit (Φ=T 10/R sheet) of the double-layer CIO/ITO films is significantly greater than that of single-layer CIO, IAD-ITO, and commercial ITO films. CIO/ITO-based PLEDs exhibit comparable or superior device performance versus ITO-based control devices. CIO/ITO materials have a much lower sheet resistance than ITO, rendering them promising low In content electrode materials for large-area optoelectronic devices.
UR - http://www.scopus.com/inward/record.url?scp=33748475354&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33748475354&partnerID=8YFLogxK
U2 - 10.1063/1.2240110
DO - 10.1063/1.2240110
M3 - Article
AN - SCOPUS:33748475354
VL - 89
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 5
M1 - 051116
ER -