Highly volatile, low-melting, fluorine-free precursors for MOCVD of lanthanide oxide-containing thin films

John A. Belot; Anchuan Wang; Richard J. McNeely; Louise Liable-Sands; Arnold L. Rheingold; Tobin J. Marks

doi:10.1002/(sici)1521-3862(199903)5:2<65::aid-cvde65>3.3.co;2-2

Highly volatile, low-melting, fluorine-free precursors for MOCVD of lanthanide oxide-containing thin films

John A. Belot, Anchuan Wang, Richard J. McNeely, Louise Liable-Sands, Arnold L. Rheingold, Tobin J. Marks

Northwestern University

Research output: Contribution to journal › Article

30 Citations (Scopus)

Original language	English
Pages (from-to)	65-69
Number of pages	5
Journal	Chemical Vapor Deposition
Volume	5
Issue number	2
DOIs	https://doi.org/10.1002/(sici)1521-3862(199903)5:2<65::aid-cvde65>3.3.co;2-2
Publication status	Published - Mar 1999

ASJC Scopus subject areas

Chemistry(all)
Surfaces and Interfaces
Process Chemistry and Technology

Access to Document

10.1002/(sici)1521-3862(199903)5:2<65::aid-cvde65>3.3.co;2-2

Cite this

Belot, J. A., Wang, A., McNeely, R. J., Liable-Sands, L., Rheingold, A. L., & Marks, T. J. (1999). Highly volatile, low-melting, fluorine-free precursors for MOCVD of lanthanide oxide-containing thin films. Chemical Vapor Deposition, 5(2), 65-69. https://doi.org/10.1002/(sici)1521-3862(199903)5:2<65::aid-cvde65>3.3.co;2-2

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