Highly volatile, low-melting, fluorine-free precursors for MOCVD of lanthanide oxide-containing thin films

John A. Belot, Anchuan Wang, Richard J. McNeely, Louise Liable-Sands, Arnold L. Rheingold, Tobin J Marks

Research output: Contribution to journalArticle

29 Citations (Scopus)
Original languageEnglish
Pages (from-to)65-69
Number of pages5
JournalChemical Vapor Deposition
Volume5
Issue number2
Publication statusPublished - Mar 1999

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Metallorganic chemical vapor deposition
Rare earth elements
Fluorine
metalorganic chemical vapor deposition
fluorine
Melting
melting
Thin films
Oxides
oxides
thin films

ASJC Scopus subject areas

  • Process Chemistry and Technology
  • Electrochemistry
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Belot, J. A., Wang, A., McNeely, R. J., Liable-Sands, L., Rheingold, A. L., & Marks, T. J. (1999). Highly volatile, low-melting, fluorine-free precursors for MOCVD of lanthanide oxide-containing thin films. Chemical Vapor Deposition, 5(2), 65-69.

Highly volatile, low-melting, fluorine-free precursors for MOCVD of lanthanide oxide-containing thin films. / Belot, John A.; Wang, Anchuan; McNeely, Richard J.; Liable-Sands, Louise; Rheingold, Arnold L.; Marks, Tobin J.

In: Chemical Vapor Deposition, Vol. 5, No. 2, 03.1999, p. 65-69.

Research output: Contribution to journalArticle

Belot, JA, Wang, A, McNeely, RJ, Liable-Sands, L, Rheingold, AL & Marks, TJ 1999, 'Highly volatile, low-melting, fluorine-free precursors for MOCVD of lanthanide oxide-containing thin films', Chemical Vapor Deposition, vol. 5, no. 2, pp. 65-69.
Belot, John A. ; Wang, Anchuan ; McNeely, Richard J. ; Liable-Sands, Louise ; Rheingold, Arnold L. ; Marks, Tobin J. / Highly volatile, low-melting, fluorine-free precursors for MOCVD of lanthanide oxide-containing thin films. In: Chemical Vapor Deposition. 1999 ; Vol. 5, No. 2. pp. 65-69.
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