TY - JOUR
T1 - Highly volatile, low-melting, fluorine-free precursors for MOCVD of lanthanide oxide-containing thin films
AU - Belot, John A.
AU - Wang, Anchuan
AU - McNeely, Richard J.
AU - Liable-Sands, Louise
AU - Rheingold, Arnold L.
AU - Marks, Tobin J.
N1 - Copyright:
Copyright 2004 Elsevier Science B.V., Amsterdam. All rights reserved.
PY - 1999
Y1 - 1999
N2 - The synthesis of a new class of lanthanide ketoiminate-based MOCVD precursors which are fluorine-free, highly volatile, and liquids under typical film growth conditions is presented. The synthesis exploits reactive Ln(NTMS2)3 in the high yield, one-pot preparation of analytically pure Ln(miki)3 complexes. Advantages of this reaction include: the synthetic by-products can be easily removed, the methodology should be applicable to all lanthanide ions, and that the ketoiminate architecture offers a high degree of flexibility for tuning both volatility and melting point. The viability of these precursors for MOCVD has been explicitly demonstrated using Ce(miki)3 in the growth of high-quality CeO2 films.
AB - The synthesis of a new class of lanthanide ketoiminate-based MOCVD precursors which are fluorine-free, highly volatile, and liquids under typical film growth conditions is presented. The synthesis exploits reactive Ln(NTMS2)3 in the high yield, one-pot preparation of analytically pure Ln(miki)3 complexes. Advantages of this reaction include: the synthetic by-products can be easily removed, the methodology should be applicable to all lanthanide ions, and that the ketoiminate architecture offers a high degree of flexibility for tuning both volatility and melting point. The viability of these precursors for MOCVD has been explicitly demonstrated using Ce(miki)3 in the growth of high-quality CeO2 films.
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M3 - Article
AN - SCOPUS:0032665838
VL - 11
SP - 65
EP - 69
JO - Advanced Materials
JF - Advanced Materials
SN - 0935-9648
IS - 5
ER -