Highly volatile, low-melting, fluorine-free precursors for MOCVD of lanthanide oxide-containing thin films

John A. Belot, Anchuan Wang, Richard J. McNeely, Louise Liable-Sands, Arnold L. Rheingold, Tobin J Marks

Research output: Contribution to journalArticle

Abstract

The synthesis of a new class of lanthanide ketoiminate-based MOCVD precursors which are fluorine-free, highly volatile, and liquids under typical film growth conditions is presented. The synthesis exploits reactive Ln(NTMS2)3 in the high yield, one-pot preparation of analytically pure Ln(miki)3 complexes. Advantages of this reaction include: the synthetic by-products can be easily removed, the methodology should be applicable to all lanthanide ions, and that the ketoiminate architecture offers a high degree of flexibility for tuning both volatility and melting point. The viability of these precursors for MOCVD has been explicitly demonstrated using Ce(miki)3 in the growth of high-quality CeO2 films.

Original languageEnglish
Pages (from-to)65-69
Number of pages5
JournalAdvanced Materials
Volume11
Issue number5
Publication statusPublished - 1999

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ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Belot, J. A., Wang, A., McNeely, R. J., Liable-Sands, L., Rheingold, A. L., & Marks, T. J. (1999). Highly volatile, low-melting, fluorine-free precursors for MOCVD of lanthanide oxide-containing thin films. Advanced Materials, 11(5), 65-69.