Highly volatile, low-melting, fluorine-free precursors for MOCVD of lanthanide oxide-containing thin films

John A. Belot; Anchuan Wang; Richard J. McNeely; Louise Liable-Sands; Arnold L. Rheingold; Tobin J. Marks

Highly volatile, low-melting, fluorine-free precursors for MOCVD of lanthanide oxide-containing thin films

John A. Belot, Anchuan Wang, Richard J. McNeely, Louise Liable-Sands, Arnold L. Rheingold, Tobin J. Marks

Northwestern University

Research output: Contribution to journal › Article › peer-review

Abstract

The synthesis of a new class of lanthanide ketoiminate-based MOCVD precursors which are fluorine-free, highly volatile, and liquids under typical film growth conditions is presented. The synthesis exploits reactive Ln(NTMS₂)₃ in the high yield, one-pot preparation of analytically pure Ln(miki)₃ complexes. Advantages of this reaction include: the synthetic by-products can be easily removed, the methodology should be applicable to all lanthanide ions, and that the ketoiminate architecture offers a high degree of flexibility for tuning both volatility and melting point. The viability of these precursors for MOCVD has been explicitly demonstrated using Ce(miki)₃ in the growth of high-quality CeO₂ films.

Original language	English
Pages (from-to)	65-69
Number of pages	5
Journal	Advanced Materials
Volume	11
Issue number	5
Publication status	Published - 1999

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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title = "Highly volatile, low-melting, fluorine-free precursors for MOCVD of lanthanide oxide-containing thin films",

abstract = "The synthesis of a new class of lanthanide ketoiminate-based MOCVD precursors which are fluorine-free, highly volatile, and liquids under typical film growth conditions is presented. The synthesis exploits reactive Ln(NTMS2)3 in the high yield, one-pot preparation of analytically pure Ln(miki)3 complexes. Advantages of this reaction include: the synthetic by-products can be easily removed, the methodology should be applicable to all lanthanide ions, and that the ketoiminate architecture offers a high degree of flexibility for tuning both volatility and melting point. The viability of these precursors for MOCVD has been explicitly demonstrated using Ce(miki)3 in the growth of high-quality CeO2 films.",

author = "Belot, {John A.} and Anchuan Wang and McNeely, {Richard J.} and Louise Liable-Sands and Rheingold, {Arnold L.} and Marks, {Tobin J.}",

year = "1999",

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journal = "Advanced Materials",

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T1 - Highly volatile, low-melting, fluorine-free precursors for MOCVD of lanthanide oxide-containing thin films

AU - Belot, John A.

AU - Wang, Anchuan

AU - McNeely, Richard J.

AU - Liable-Sands, Louise

AU - Rheingold, Arnold L.

AU - Marks, Tobin J.

PY - 1999

Y1 - 1999

N2 - The synthesis of a new class of lanthanide ketoiminate-based MOCVD precursors which are fluorine-free, highly volatile, and liquids under typical film growth conditions is presented. The synthesis exploits reactive Ln(NTMS2)3 in the high yield, one-pot preparation of analytically pure Ln(miki)3 complexes. Advantages of this reaction include: the synthetic by-products can be easily removed, the methodology should be applicable to all lanthanide ions, and that the ketoiminate architecture offers a high degree of flexibility for tuning both volatility and melting point. The viability of these precursors for MOCVD has been explicitly demonstrated using Ce(miki)3 in the growth of high-quality CeO2 films.

AB - The synthesis of a new class of lanthanide ketoiminate-based MOCVD precursors which are fluorine-free, highly volatile, and liquids under typical film growth conditions is presented. The synthesis exploits reactive Ln(NTMS2)3 in the high yield, one-pot preparation of analytically pure Ln(miki)3 complexes. Advantages of this reaction include: the synthetic by-products can be easily removed, the methodology should be applicable to all lanthanide ions, and that the ketoiminate architecture offers a high degree of flexibility for tuning both volatility and melting point. The viability of these precursors for MOCVD has been explicitly demonstrated using Ce(miki)3 in the growth of high-quality CeO2 films.

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