Hole intraband relaxation in strongly confined quantum dots

Revisiting the "phonon bottleneck" problem

S. Xu, A. A. Mikhailovsky, J. A. Hollingsworth, Victor I Klimov

Research output: Contribution to journalArticle

91 Citations (Scopus)

Abstract

We study hole intraband relaxation in strongly confined CdSe quantum dots. We observe a dramatic reduction in the hole energy-loss rate in the final stage of hole relaxation at the bottom of the valence band. This reduction occurs because of a significantly increased inter-level spacing near the band edge, and, in particular, because of a large energy gap separating the lowest ("emitting") hole states from a dense quasi-continuum of higher lying states. A slowed population buildup of the lowest hole state indicates that the "phonon bottle-neck," which is bypassed in the conduction band due to Auger-type electron-hole interactions, still plays a significant role in hole relaxation.

Original languageEnglish
Article number045319
Pages (from-to)453191-453195
Number of pages5
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume65
Issue number4
Publication statusPublished - Jan 15 2002

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Semiconductor quantum dots
quantum dots
Bottles
Valence bands
Conduction bands
Energy dissipation
Energy gap
Electrons
bottles
conduction bands
energy dissipation
spacing
continuums
valence
interactions

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Hole intraband relaxation in strongly confined quantum dots : Revisiting the "phonon bottleneck" problem. / Xu, S.; Mikhailovsky, A. A.; Hollingsworth, J. A.; Klimov, Victor I.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 65, No. 4, 045319, 15.01.2002, p. 453191-453195.

Research output: Contribution to journalArticle

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