Abstract
We study hole intraband relaxation in strongly confined CdSe quantum dots. We observe a dramatic reduction in the hole energy-loss rate in the final stage of hole relaxation at the bottom of the valence band. This reduction occurs because of a significantly increased inter-level spacing near the band edge, and, in particular, because of a large energy gap separating the lowest (“emitting”) hole states from a dense quasi-continuum of higher lying states. A slowed population buildup of the lowest hole state indicates that the “phonon bottleneck,” which is bypassed in the conduction band due to Auger-type electron-hole interactions, still plays a significant role in hole relaxation.
| Original language | English |
|---|---|
| Pages (from-to) | 1-5 |
| Number of pages | 5 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 65 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - Jan 1 2002 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
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Xu, S., Mikhailovsky, A. A., Hollingsworth, J. A., & Klimov, V. I. (2002). Hole intraband relaxation in strongly confined quantum dots: Revisiting the “phonon bottleneck” problem. Physical Review B - Condensed Matter and Materials Physics, 65(4), 1-5. https://doi.org/10.1103/PhysRevB.65.045319