Hole intraband relaxation in strongly confined quantum dots: Revisiting the “phonon bottleneck” problem

S. Xu, A. A. Mikhailovsky, J. A. Hollingsworth, Victor I Klimov

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We study hole intraband relaxation in strongly confined CdSe quantum dots. We observe a dramatic reduction in the hole energy-loss rate in the final stage of hole relaxation at the bottom of the valence band. This reduction occurs because of a significantly increased inter-level spacing near the band edge, and, in particular, because of a large energy gap separating the lowest (“emitting”) hole states from a dense quasi-continuum of higher lying states. A slowed population buildup of the lowest hole state indicates that the “phonon bottleneck,” which is bypassed in the conduction band due to Auger-type electron-hole interactions, still plays a significant role in hole relaxation.

Original languageEnglish
Pages (from-to)1-5
Number of pages5
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume65
Issue number4
DOIs
Publication statusPublished - Jan 1 2002

Fingerprint

Semiconductor quantum dots
quantum dots
Valence bands
Conduction bands
Energy dissipation
Energy gap
Electrons
conduction bands
energy dissipation
spacing
continuums
valence
interactions

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Hole intraband relaxation in strongly confined quantum dots : Revisiting the “phonon bottleneck” problem. / Xu, S.; Mikhailovsky, A. A.; Hollingsworth, J. A.; Klimov, Victor I.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 65, No. 4, 01.01.2002, p. 1-5.

Research output: Contribution to journalArticle

@article{d6c0aa9d499e4b069264f49f68c953fd,
title = "Hole intraband relaxation in strongly confined quantum dots: Revisiting the “phonon bottleneck” problem",
abstract = "We study hole intraband relaxation in strongly confined CdSe quantum dots. We observe a dramatic reduction in the hole energy-loss rate in the final stage of hole relaxation at the bottom of the valence band. This reduction occurs because of a significantly increased inter-level spacing near the band edge, and, in particular, because of a large energy gap separating the lowest (“emitting”) hole states from a dense quasi-continuum of higher lying states. A slowed population buildup of the lowest hole state indicates that the “phonon bottleneck,” which is bypassed in the conduction band due to Auger-type electron-hole interactions, still plays a significant role in hole relaxation.",
author = "S. Xu and Mikhailovsky, {A. A.} and Hollingsworth, {J. A.} and Klimov, {Victor I}",
year = "2002",
month = "1",
day = "1",
doi = "10.1103/PhysRevB.65.045319",
language = "English",
volume = "65",
pages = "1--5",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "4",

}

TY - JOUR

T1 - Hole intraband relaxation in strongly confined quantum dots

T2 - Revisiting the “phonon bottleneck” problem

AU - Xu, S.

AU - Mikhailovsky, A. A.

AU - Hollingsworth, J. A.

AU - Klimov, Victor I

PY - 2002/1/1

Y1 - 2002/1/1

N2 - We study hole intraband relaxation in strongly confined CdSe quantum dots. We observe a dramatic reduction in the hole energy-loss rate in the final stage of hole relaxation at the bottom of the valence band. This reduction occurs because of a significantly increased inter-level spacing near the band edge, and, in particular, because of a large energy gap separating the lowest (“emitting”) hole states from a dense quasi-continuum of higher lying states. A slowed population buildup of the lowest hole state indicates that the “phonon bottleneck,” which is bypassed in the conduction band due to Auger-type electron-hole interactions, still plays a significant role in hole relaxation.

AB - We study hole intraband relaxation in strongly confined CdSe quantum dots. We observe a dramatic reduction in the hole energy-loss rate in the final stage of hole relaxation at the bottom of the valence band. This reduction occurs because of a significantly increased inter-level spacing near the band edge, and, in particular, because of a large energy gap separating the lowest (“emitting”) hole states from a dense quasi-continuum of higher lying states. A slowed population buildup of the lowest hole state indicates that the “phonon bottleneck,” which is bypassed in the conduction band due to Auger-type electron-hole interactions, still plays a significant role in hole relaxation.

UR - http://www.scopus.com/inward/record.url?scp=85038267455&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85038267455&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.65.045319

DO - 10.1103/PhysRevB.65.045319

M3 - Article

AN - SCOPUS:85038267455

VL - 65

SP - 1

EP - 5

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 4

ER -