Abstract
We study hole intraband relaxation in strongly confined CdSe quantum dots. We observe a dramatic reduction in the hole energy-loss rate in the final stage of hole relaxation at the bottom of the valence band. This reduction occurs because of a significantly increased inter-level spacing near the band edge, and, in particular, because of a large energy gap separating the lowest (“emitting”) hole states from a dense quasi-continuum of higher lying states. A slowed population buildup of the lowest hole state indicates that the “phonon bottleneck,” which is bypassed in the conduction band due to Auger-type electron-hole interactions, still plays a significant role in hole relaxation.
| Original language | English |
|---|---|
| Pages (from-to) | 1-5 |
| Number of pages | 5 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 65 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - Jan 1 2002 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
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Hole intraband relaxation in strongly confined quantum dots : Revisiting the “phonon bottleneck” problem. / Xu, S.; Mikhailovsky, A. A.; Hollingsworth, J. A.; Klimov, Victor I.
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 65, No. 4, 01.01.2002, p. 1-5.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Hole intraband relaxation in strongly confined quantum dots
T2 - Revisiting the “phonon bottleneck” problem
AU - Xu, S.
AU - Mikhailovsky, A. A.
AU - Hollingsworth, J. A.
AU - Klimov, Victor I
PY - 2002/1/1
Y1 - 2002/1/1
N2 - We study hole intraband relaxation in strongly confined CdSe quantum dots. We observe a dramatic reduction in the hole energy-loss rate in the final stage of hole relaxation at the bottom of the valence band. This reduction occurs because of a significantly increased inter-level spacing near the band edge, and, in particular, because of a large energy gap separating the lowest (“emitting”) hole states from a dense quasi-continuum of higher lying states. A slowed population buildup of the lowest hole state indicates that the “phonon bottleneck,” which is bypassed in the conduction band due to Auger-type electron-hole interactions, still plays a significant role in hole relaxation.
AB - We study hole intraband relaxation in strongly confined CdSe quantum dots. We observe a dramatic reduction in the hole energy-loss rate in the final stage of hole relaxation at the bottom of the valence band. This reduction occurs because of a significantly increased inter-level spacing near the band edge, and, in particular, because of a large energy gap separating the lowest (“emitting”) hole states from a dense quasi-continuum of higher lying states. A slowed population buildup of the lowest hole state indicates that the “phonon bottleneck,” which is bypassed in the conduction band due to Auger-type electron-hole interactions, still plays a significant role in hole relaxation.
UR - http://www.scopus.com/inward/record.url?scp=85038267455&partnerID=8YFLogxK
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U2 - 10.1103/PhysRevB.65.045319
DO - 10.1103/PhysRevB.65.045319
M3 - Article
AN - SCOPUS:85038267455
VL - 65
SP - 1
EP - 5
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 1098-0121
IS - 4
ER -