Hot spot dynamics in carbon nanotube array devices

Michael Engel, Mathias Steiner, Jung Woo T. Seo, Mark C. Hersam, Phaedon Avouris

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We report on the dynamics of spatial temperature distributions in aligned semiconducting carbon nanotube array devices with submicrometer channel lengths. By using high-resolution optical microscopy in combination with electrical transport measurements, we observe under steady state bias conditions the emergence of time-variable, local temperature maxima with dimensions below 300 nm, and temperatures above 400 K. On the basis of time domain cross-correlation analysis, we investigate how the intensity fluctuations of the thermal radiation patterns are correlated with the overall device current. The analysis reveals the interdependence of electrical current fluctuations and time-variable hot spot formation that limits the overall device performance and, ultimately, may cause device degradation. The findings have implications for the future development of carbon nanotube-based technologies.

Original languageEnglish
Pages (from-to)2127-2131
Number of pages5
JournalNano letters
Volume15
Issue number3
DOIs
Publication statusPublished - Mar 11 2015

Keywords

  • Carbon nanotubes
  • nanoelectronics
  • nanooptics
  • power dissipation
  • thermal imaging

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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  • Cite this

    Engel, M., Steiner, M., Seo, J. W. T., Hersam, M. C., & Avouris, P. (2015). Hot spot dynamics in carbon nanotube array devices. Nano letters, 15(3), 2127-2131. https://doi.org/10.1021/acs.nanolett.5b00048