Hybrid, Gate-Tunable, van der Waals p-n Heterojunctions from Pentacene and MoS2

Deep Jariwala, Sarah L. Howell, Kan Sheng Chen, Junmo Kang, Vinod K. Sangwan, Stephen A. Filippone, Riccardo Turrisi, Tobin J Marks, Lincoln J. Lauhon, Mark C Hersam

Research output: Contribution to journalArticle

130 Citations (Scopus)

Abstract

The recent emergence of a wide variety of two-dimensional (2D) materials has created new opportunities for device concepts and applications. In particular, the availability of semiconducting transition metal dichalcogenides, in addition to semimetallic graphene and insulating boron nitride, has enabled the fabrication of all 2D van der Waals heterostructure devices. Furthermore, the concept of van der Waals heterostructures has the potential to be significantly broadened beyond layered solids. For example, molecular and polymeric organic solids, whose surface atoms possess saturated bonds, are also known to interact via van der Waals forces and thus offer an alternative for scalable integration with 2D materials. Here, we demonstrate the integration of an organic small molecule p-type semiconductor, pentacene, with a 2D n-type semiconductor, MoS2. The resulting p-n heterojunction is gate-tunable and shows asymmetric control over the antiambipolar transfer characteristic. In addition, the pentacene/MoS2 heterojunction exhibits a photovoltaic effect attributable to type II band alignment, which suggests that MoS2 can function as an acceptor in hybrid solar cells.

Original languageEnglish
Pages (from-to)497-503
Number of pages7
JournalNano Letters
Volume16
Issue number1
DOIs
Publication statusPublished - Jan 13 2016

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Heterojunctions
heterojunctions
organic solids
p-type semiconductors
photovoltaic effect
n-type semiconductors
Van der Waals forces
boron nitrides
solid surfaces
availability
graphene
solar cells
transition metals
alignment
Semiconductor materials
Photovoltaic effects
fabrication
Graphite
Boron nitride
Graphene

Keywords

  • antiambipolar
  • gate-tunable
  • Organic
  • photovoltaic
  • transition metal dichalcogenide

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanical Engineering

Cite this

Jariwala, D., Howell, S. L., Chen, K. S., Kang, J., Sangwan, V. K., Filippone, S. A., ... Hersam, M. C. (2016). Hybrid, Gate-Tunable, van der Waals p-n Heterojunctions from Pentacene and MoS2 Nano Letters, 16(1), 497-503. https://doi.org/10.1021/acs.nanolett.5b04141

Hybrid, Gate-Tunable, van der Waals p-n Heterojunctions from Pentacene and MoS2 . / Jariwala, Deep; Howell, Sarah L.; Chen, Kan Sheng; Kang, Junmo; Sangwan, Vinod K.; Filippone, Stephen A.; Turrisi, Riccardo; Marks, Tobin J; Lauhon, Lincoln J.; Hersam, Mark C.

In: Nano Letters, Vol. 16, No. 1, 13.01.2016, p. 497-503.

Research output: Contribution to journalArticle

Jariwala, D, Howell, SL, Chen, KS, Kang, J, Sangwan, VK, Filippone, SA, Turrisi, R, Marks, TJ, Lauhon, LJ & Hersam, MC 2016, 'Hybrid, Gate-Tunable, van der Waals p-n Heterojunctions from Pentacene and MoS2 ', Nano Letters, vol. 16, no. 1, pp. 497-503. https://doi.org/10.1021/acs.nanolett.5b04141
Jariwala D, Howell SL, Chen KS, Kang J, Sangwan VK, Filippone SA et al. Hybrid, Gate-Tunable, van der Waals p-n Heterojunctions from Pentacene and MoS2 Nano Letters. 2016 Jan 13;16(1):497-503. https://doi.org/10.1021/acs.nanolett.5b04141
Jariwala, Deep ; Howell, Sarah L. ; Chen, Kan Sheng ; Kang, Junmo ; Sangwan, Vinod K. ; Filippone, Stephen A. ; Turrisi, Riccardo ; Marks, Tobin J ; Lauhon, Lincoln J. ; Hersam, Mark C. / Hybrid, Gate-Tunable, van der Waals p-n Heterojunctions from Pentacene and MoS2 In: Nano Letters. 2016 ; Vol. 16, No. 1. pp. 497-503.
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