Hybrid titanium-aluminum oxide layer as alternative high-k gate dielectric for the next generation of complementary metal-oxide-semiconductor devices

O. Auciello, W. Fan, B. Kabius, S. Saha, J. A. Carlisle, Robert P. H. Chang, C. Lopez, E. A. Irene, R. A. Baragiola

Research output: Contribution to journalArticle

73 Citations (Scopus)

Abstract

Research is focused on finding reliable high-dielectric constant (k) oxides with high capacitance and all critical properties required for the next generation of complementary metal-oxide-semiconductor (CMOS) gates. A trade-off between dielectric constant and band-offset height is generally observed on gate oxides. Combining TiO 2 and Al 2O 3, with the two extremes of high permittivity (k) and high band offset, we produced a Ti xAl 1-xO y, (TAO) oxide layer with k= ∼ 30 and low dielectric leakage for a next generation of high-k dielectric gates. We developed a low temperature oxidation process, following room temperature sputter-deposition of TiAl layers, to produce ultrathin TAO layers on Si with subatomic or no SiO 2 or silicide interface formation. We demonstrated TAO layers with

Original languageEnglish
Article number042904
JournalApplied Physics Letters
Volume86
Issue number4
DOIs
Publication statusPublished - 2005

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semiconductor devices
titanium oxides
CMOS
aluminum oxides
permittivity
oxides
leakage
capacitance
oxidation
room temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Hybrid titanium-aluminum oxide layer as alternative high-k gate dielectric for the next generation of complementary metal-oxide-semiconductor devices. / Auciello, O.; Fan, W.; Kabius, B.; Saha, S.; Carlisle, J. A.; Chang, Robert P. H.; Lopez, C.; Irene, E. A.; Baragiola, R. A.

In: Applied Physics Letters, Vol. 86, No. 4, 042904, 2005.

Research output: Contribution to journalArticle

Auciello, O. ; Fan, W. ; Kabius, B. ; Saha, S. ; Carlisle, J. A. ; Chang, Robert P. H. ; Lopez, C. ; Irene, E. A. ; Baragiola, R. A. / Hybrid titanium-aluminum oxide layer as alternative high-k gate dielectric for the next generation of complementary metal-oxide-semiconductor devices. In: Applied Physics Letters. 2005 ; Vol. 86, No. 4.
@article{ff3a60a0c54c4b589c94acdbd3e090c3,
title = "Hybrid titanium-aluminum oxide layer as alternative high-k gate dielectric for the next generation of complementary metal-oxide-semiconductor devices",
abstract = "Research is focused on finding reliable high-dielectric constant (k) oxides with high capacitance and all critical properties required for the next generation of complementary metal-oxide-semiconductor (CMOS) gates. A trade-off between dielectric constant and band-offset height is generally observed on gate oxides. Combining TiO 2 and Al 2O 3, with the two extremes of high permittivity (k) and high band offset, we produced a Ti xAl 1-xO y, (TAO) oxide layer with k= ∼ 30 and low dielectric leakage for a next generation of high-k dielectric gates. We developed a low temperature oxidation process, following room temperature sputter-deposition of TiAl layers, to produce ultrathin TAO layers on Si with subatomic or no SiO 2 or silicide interface formation. We demonstrated TAO layers with",
author = "O. Auciello and W. Fan and B. Kabius and S. Saha and Carlisle, {J. A.} and Chang, {Robert P. H.} and C. Lopez and Irene, {E. A.} and Baragiola, {R. A.}",
year = "2005",
doi = "10.1063/1.1856137",
language = "English",
volume = "86",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "4",

}

TY - JOUR

T1 - Hybrid titanium-aluminum oxide layer as alternative high-k gate dielectric for the next generation of complementary metal-oxide-semiconductor devices

AU - Auciello, O.

AU - Fan, W.

AU - Kabius, B.

AU - Saha, S.

AU - Carlisle, J. A.

AU - Chang, Robert P. H.

AU - Lopez, C.

AU - Irene, E. A.

AU - Baragiola, R. A.

PY - 2005

Y1 - 2005

N2 - Research is focused on finding reliable high-dielectric constant (k) oxides with high capacitance and all critical properties required for the next generation of complementary metal-oxide-semiconductor (CMOS) gates. A trade-off between dielectric constant and band-offset height is generally observed on gate oxides. Combining TiO 2 and Al 2O 3, with the two extremes of high permittivity (k) and high band offset, we produced a Ti xAl 1-xO y, (TAO) oxide layer with k= ∼ 30 and low dielectric leakage for a next generation of high-k dielectric gates. We developed a low temperature oxidation process, following room temperature sputter-deposition of TiAl layers, to produce ultrathin TAO layers on Si with subatomic or no SiO 2 or silicide interface formation. We demonstrated TAO layers with

AB - Research is focused on finding reliable high-dielectric constant (k) oxides with high capacitance and all critical properties required for the next generation of complementary metal-oxide-semiconductor (CMOS) gates. A trade-off between dielectric constant and band-offset height is generally observed on gate oxides. Combining TiO 2 and Al 2O 3, with the two extremes of high permittivity (k) and high band offset, we produced a Ti xAl 1-xO y, (TAO) oxide layer with k= ∼ 30 and low dielectric leakage for a next generation of high-k dielectric gates. We developed a low temperature oxidation process, following room temperature sputter-deposition of TiAl layers, to produce ultrathin TAO layers on Si with subatomic or no SiO 2 or silicide interface formation. We demonstrated TAO layers with

UR - http://www.scopus.com/inward/record.url?scp=13744250526&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=13744250526&partnerID=8YFLogxK

U2 - 10.1063/1.1856137

DO - 10.1063/1.1856137

M3 - Article

VL - 86

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 4

M1 - 042904

ER -