Hybrid titanium-aluminum oxide layer as alternative high-k gate dielectric for the next generation of complementary metal-oxide-semiconductor devices

O. Auciello, W. Fan, B. Kabius, S. Saha, J. A. Carlisle, R. P.H. Chang, C. Lopez, E. A. Irene, R. A. Baragiola

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74 Citations (Scopus)

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Physics & Astronomy