Hybridization Gap in the Semiconducting Compound SrIr4In2Ge4

Nicholas P. Calta; Jino Im; Lei Fang; Thomas C. Chasapis; Daniel E. Bugaris; Duck Young Chung; Wai Kwong Kwok; Mercouri G Kanatzidis

doi:10.1021/acs.inorgchem.6b02617

Hybridization Gap in the Semiconducting Compound SrIr₄In₂Ge₄

Nicholas P. Calta, Jino Im, Lei Fang, Thomas C. Chasapis, Daniel E. Bugaris, Duck Young Chung, Wai Kwong Kwok, Mercouri G Kanatzidis

Northwestern University

Research output: Contribution to journal › Article

1 Citation (Scopus)

Abstract

Large single crystals of SrIr₄In₂Ge₄ were synthesized using the In flux method. This compound is a hybridization gap semiconductor with an experimental optical band gap of E_g = 0.25(3) eV. It crystallizes in the tetragonal EuIr₄In₂Ge₄ structure type with space group I4̅2m and unit cell parameters a = 6.9004(5) Å and c = 8.7120(9) Å. The electronic structure is very similar to both EuIr₄In₂Ge₄ and the parent structure Ca₃Ir₄Ge₄, suggesting that these compounds comprise a new family of hybridization gap materials that exhibit indirect gap, semiconducting behavior at a valence electron count of 60 per formula unit, similar to the Heusler alloys.

Original language	English
Pages (from-to)	12477-12481
Number of pages	5
Journal	Inorganic Chemistry
Volume	55
Issue number	23
DOIs	https://doi.org/10.1021/acs.inorgchem.6b02617
Publication status	Published - Dec 5 2016

ASJC Scopus subject areas

Physical and Theoretical Chemistry
Inorganic Chemistry

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Calta, N. P., Im, J., Fang, L., Chasapis, T. C., Bugaris, D. E., Chung, D. Y., Kwok, W. K., & Kanatzidis, M. G. (2016). Hybridization Gap in the Semiconducting Compound SrIr₄In₂Ge₄ Inorganic Chemistry, 55(23), 12477-12481. https://doi.org/10.1021/acs.inorgchem.6b02617

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title = "Hybridization Gap in the Semiconducting Compound SrIr4In2Ge4 ",

abstract = "Large single crystals of SrIr4In2Ge4 were synthesized using the In flux method. This compound is a hybridization gap semiconductor with an experimental optical band gap of Eg = 0.25(3) eV. It crystallizes in the tetragonal EuIr4In2Ge4 structure type with space group I4̅2m and unit cell parameters a = 6.9004(5) {\AA} and c = 8.7120(9) {\AA}. The electronic structure is very similar to both EuIr4In2Ge4 and the parent structure Ca3Ir4Ge4, suggesting that these compounds comprise a new family of hybridization gap materials that exhibit indirect gap, semiconducting behavior at a valence electron count of 60 per formula unit, similar to the Heusler alloys.",

author = "Calta, {Nicholas P.} and Jino Im and Lei Fang and Chasapis, {Thomas C.} and Bugaris, {Daniel E.} and Chung, {Duck Young} and Kwok, {Wai Kwong} and Kanatzidis, {Mercouri G}",

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T1 - Hybridization Gap in the Semiconducting Compound SrIr4In2Ge4

AU - Calta, Nicholas P.

AU - Im, Jino

AU - Fang, Lei

AU - Chasapis, Thomas C.

AU - Bugaris, Daniel E.

AU - Chung, Duck Young

AU - Kwok, Wai Kwong

AU - Kanatzidis, Mercouri G

PY - 2016/12/5

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N2 - Large single crystals of SrIr4In2Ge4 were synthesized using the In flux method. This compound is a hybridization gap semiconductor with an experimental optical band gap of Eg = 0.25(3) eV. It crystallizes in the tetragonal EuIr4In2Ge4 structure type with space group I4̅2m and unit cell parameters a = 6.9004(5) Å and c = 8.7120(9) Å. The electronic structure is very similar to both EuIr4In2Ge4 and the parent structure Ca3Ir4Ge4, suggesting that these compounds comprise a new family of hybridization gap materials that exhibit indirect gap, semiconducting behavior at a valence electron count of 60 per formula unit, similar to the Heusler alloys.

AB - Large single crystals of SrIr4In2Ge4 were synthesized using the In flux method. This compound is a hybridization gap semiconductor with an experimental optical band gap of Eg = 0.25(3) eV. It crystallizes in the tetragonal EuIr4In2Ge4 structure type with space group I4̅2m and unit cell parameters a = 6.9004(5) Å and c = 8.7120(9) Å. The electronic structure is very similar to both EuIr4In2Ge4 and the parent structure Ca3Ir4Ge4, suggesting that these compounds comprise a new family of hybridization gap materials that exhibit indirect gap, semiconducting behavior at a valence electron count of 60 per formula unit, similar to the Heusler alloys.

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