@article{328ea223fd9e4430a4b789bb33fa6fd1,
title = "Hybridization Gap in the Semiconducting Compound SrIr4In2Ge4",
abstract = "Large single crystals of SrIr4In2Ge4 were synthesized using the In flux method. This compound is a hybridization gap semiconductor with an experimental optical band gap of Eg = 0.25(3) eV. It crystallizes in the tetragonal EuIr4In2Ge4 structure type with space group I4̅2m and unit cell parameters a = 6.9004(5) {\AA} and c = 8.7120(9) {\AA}. The electronic structure is very similar to both EuIr4In2Ge4 and the parent structure Ca3Ir4Ge4, suggesting that these compounds comprise a new family of hybridization gap materials that exhibit indirect gap, semiconducting behavior at a valence electron count of 60 per formula unit, similar to the Heusler alloys.",
author = "Calta, {Nicholas P.} and Jino Im and Lei Fang and Chasapis, {Thomas C.} and Bugaris, {Daniel E.} and Chung, {Duck Young} and Kwok, {Wai Kwong} and Kanatzidis, {Mercouri G.}",
note = "Funding Information: This work made use of the EPIC facility (NUANCE Center- Northwestern Univ.), which has received support through the MRSEC program (NSF DMR-1121262) at the Materials Research Center, the International Institute for Nanotechnology (IIN), and the State of Illinois, through the IIN. The work at Argonne National Laboratory was supported by the U. S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division. N. P. C. was partially supported under the auspices of the U.S. Department of Energy by Lawrence Livermore National Laboratory under Contract No. DE-AC52-07NA27344. Publisher Copyright: {\textcopyright} 2016 American Chemical Society.",
year = "2016",
month = dec,
day = "5",
doi = "10.1021/acs.inorgchem.6b02617",
language = "English",
volume = "55",
pages = "12477--12481",
journal = "Inorganic Chemistry",
issn = "0020-1669",
publisher = "American Chemical Society",
number = "23",
}