Hybridization Gap in the Semiconducting Compound SrIr4In2Ge4

Nicholas P. Calta, Jino Im, Lei Fang, Thomas C. Chasapis, Daniel E. Bugaris, Duck Young Chung, Wai Kwong Kwok, Mercouri G Kanatzidis

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Abstract

Large single crystals of SrIr4In2Ge4 were synthesized using the In flux method. This compound is a hybridization gap semiconductor with an experimental optical band gap of Eg = 0.25(3) eV. It crystallizes in the tetragonal EuIr4In2Ge4 structure type with space group I4̅2m and unit cell parameters a = 6.9004(5) Å and c = 8.7120(9) Å. The electronic structure is very similar to both EuIr4In2Ge4 and the parent structure Ca3Ir4Ge4, suggesting that these compounds comprise a new family of hybridization gap materials that exhibit indirect gap, semiconducting behavior at a valence electron count of 60 per formula unit, similar to the Heusler alloys.

Original languageEnglish
Pages (from-to)12477-12481
Number of pages5
JournalInorganic Chemistry
Volume55
Issue number23
DOIs
Publication statusPublished - Dec 5 2016

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ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Inorganic Chemistry

Cite this

Calta, N. P., Im, J., Fang, L., Chasapis, T. C., Bugaris, D. E., Chung, D. Y., ... Kanatzidis, M. G. (2016). Hybridization Gap in the Semiconducting Compound SrIr4In2Ge4 Inorganic Chemistry, 55(23), 12477-12481. https://doi.org/10.1021/acs.inorgchem.6b02617