Hybridization Gap in the Semiconducting Compound SrIr4In2Ge4

Nicholas P. Calta; Jino Im; Lei Fang; Thomas C. Chasapis; Daniel E. Bugaris; Duck Young Chung; Wai Kwong Kwok; Mercouri G Kanatzidis

doi:10.1021/acs.inorgchem.6b02617

Hybridization Gap in the Semiconducting Compound SrIr₄In₂Ge₄

Nicholas P. Calta, Jino Im, Lei Fang, Thomas C. Chasapis, Daniel E. Bugaris, Duck Young Chung, Wai Kwong Kwok, Mercouri G Kanatzidis

Northwestern University

Research output: Contribution to journal › Article

1 Citation (Scopus)

Abstract

Large single crystals of SrIr₄In₂Ge₄ were synthesized using the In flux method. This compound is a hybridization gap semiconductor with an experimental optical band gap of E_g = 0.25(3) eV. It crystallizes in the tetragonal EuIr₄In₂Ge₄ structure type with space group I4̅2m and unit cell parameters a = 6.9004(5) Å and c = 8.7120(9) Å. The electronic structure is very similar to both EuIr₄In₂Ge₄ and the parent structure Ca₃Ir₄Ge₄, suggesting that these compounds comprise a new family of hybridization gap materials that exhibit indirect gap, semiconducting behavior at a valence electron count of 60 per formula unit, similar to the Heusler alloys.

Original language	English
Pages (from-to)	12477-12481
Number of pages	5
Journal	Inorganic Chemistry
Volume	55
Issue number	23
DOIs	https://doi.org/10.1021/acs.inorgchem.6b02617
Publication status	Published - Dec 5 2016

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ASJC Scopus subject areas

Physical and Theoretical Chemistry
Inorganic Chemistry

Cite this

Calta, N. P., Im, J., Fang, L., Chasapis, T. C., Bugaris, D. E., Chung, D. Y., ... Kanatzidis, M. G. (2016). Hybridization Gap in the Semiconducting Compound SrIr₄In₂Ge₄ Inorganic Chemistry, 55(23), 12477-12481. https://doi.org/10.1021/acs.inorgchem.6b02617

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abstract = "Large single crystals of SrIr4In2Ge4 were synthesized using the In flux method. This compound is a hybridization gap semiconductor with an experimental optical band gap of Eg = 0.25(3) eV. It crystallizes in the tetragonal EuIr4In2Ge4 structure type with space group I4̅2m and unit cell parameters a = 6.9004(5) {\AA} and c = 8.7120(9) {\AA}. The electronic structure is very similar to both EuIr4In2Ge4 and the parent structure Ca3Ir4Ge4, suggesting that these compounds comprise a new family of hybridization gap materials that exhibit indirect gap, semiconducting behavior at a valence electron count of 60 per formula unit, similar to the Heusler alloys.",

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AU - Calta, Nicholas P.

AU - Im, Jino

AU - Fang, Lei

AU - Chasapis, Thomas C.

AU - Bugaris, Daniel E.

AU - Chung, Duck Young

AU - Kwok, Wai Kwong

AU - Kanatzidis, Mercouri G

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AB - Large single crystals of SrIr4In2Ge4 were synthesized using the In flux method. This compound is a hybridization gap semiconductor with an experimental optical band gap of Eg = 0.25(3) eV. It crystallizes in the tetragonal EuIr4In2Ge4 structure type with space group I4̅2m and unit cell parameters a = 6.9004(5) Å and c = 8.7120(9) Å. The electronic structure is very similar to both EuIr4In2Ge4 and the parent structure Ca3Ir4Ge4, suggesting that these compounds comprise a new family of hybridization gap materials that exhibit indirect gap, semiconducting behavior at a valence electron count of 60 per formula unit, similar to the Heusler alloys.

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10.1021/acs.inorgchem.6b02617