Hybridization Gap in the Semiconducting Compound SrIr4In2Ge4

Nicholas P. Calta, Jino Im, Lei Fang, Thomas C. Chasapis, Daniel E. Bugaris, Duck Young Chung, Wai Kwong Kwok, Mercouri G Kanatzidis

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1 Citation (Scopus)

Abstract

Large single crystals of SrIr4In2Ge4 were synthesized using the In flux method. This compound is a hybridization gap semiconductor with an experimental optical band gap of Eg = 0.25(3) eV. It crystallizes in the tetragonal EuIr4In2Ge4 structure type with space group I4̅2m and unit cell parameters a = 6.9004(5) Å and c = 8.7120(9) Å. The electronic structure is very similar to both EuIr4In2Ge4 and the parent structure Ca3Ir4Ge4, suggesting that these compounds comprise a new family of hybridization gap materials that exhibit indirect gap, semiconducting behavior at a valence electron count of 60 per formula unit, similar to the Heusler alloys.

Original languageEnglish
Pages (from-to)12477-12481
Number of pages5
JournalInorganic Chemistry
Volume55
Issue number23
DOIs
Publication statusPublished - Dec 5 2016

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Inorganic Chemistry

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    Calta, N. P., Im, J., Fang, L., Chasapis, T. C., Bugaris, D. E., Chung, D. Y., Kwok, W. K., & Kanatzidis, M. G. (2016). Hybridization Gap in the Semiconducting Compound SrIr4In2Ge4 Inorganic Chemistry, 55(23), 12477-12481. https://doi.org/10.1021/acs.inorgchem.6b02617