Hybridization Gap in the Semiconducting Compound SrIr4In2Ge4

Nicholas P. Calta, Jino Im, Lei Fang, Thomas C. Chasapis, Daniel E. Bugaris, Duck Young Chung, Wai Kwong Kwok, Mercouri G Kanatzidis

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Large single crystals of SrIr4In2Ge4 were synthesized using the In flux method. This compound is a hybridization gap semiconductor with an experimental optical band gap of Eg = 0.25(3) eV. It crystallizes in the tetragonal EuIr4In2Ge4 structure type with space group I4̅2m and unit cell parameters a = 6.9004(5) Å and c = 8.7120(9) Å. The electronic structure is very similar to both EuIr4In2Ge4 and the parent structure Ca3Ir4Ge4, suggesting that these compounds comprise a new family of hybridization gap materials that exhibit indirect gap, semiconducting behavior at a valence electron count of 60 per formula unit, similar to the Heusler alloys.

Original languageEnglish
Pages (from-to)12477-12481
Number of pages5
JournalInorganic Chemistry
Volume55
Issue number23
DOIs
Publication statusPublished - Dec 5 2016

Fingerprint

Optical band gaps
Electronic structure
Single crystals
Semiconductor materials
Fluxes
Electrons
electronic structure
valence
single crystals
cells
electrons

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Inorganic Chemistry

Cite this

Calta, N. P., Im, J., Fang, L., Chasapis, T. C., Bugaris, D. E., Chung, D. Y., ... Kanatzidis, M. G. (2016). Hybridization Gap in the Semiconducting Compound SrIr4In2Ge4 Inorganic Chemistry, 55(23), 12477-12481. https://doi.org/10.1021/acs.inorgchem.6b02617

Hybridization Gap in the Semiconducting Compound SrIr4In2Ge4 . / Calta, Nicholas P.; Im, Jino; Fang, Lei; Chasapis, Thomas C.; Bugaris, Daniel E.; Chung, Duck Young; Kwok, Wai Kwong; Kanatzidis, Mercouri G.

In: Inorganic Chemistry, Vol. 55, No. 23, 05.12.2016, p. 12477-12481.

Research output: Contribution to journalArticle

Calta, NP, Im, J, Fang, L, Chasapis, TC, Bugaris, DE, Chung, DY, Kwok, WK & Kanatzidis, MG 2016, 'Hybridization Gap in the Semiconducting Compound SrIr4In2Ge4 ', Inorganic Chemistry, vol. 55, no. 23, pp. 12477-12481. https://doi.org/10.1021/acs.inorgchem.6b02617
Calta NP, Im J, Fang L, Chasapis TC, Bugaris DE, Chung DY et al. Hybridization Gap in the Semiconducting Compound SrIr4In2Ge4 Inorganic Chemistry. 2016 Dec 5;55(23):12477-12481. https://doi.org/10.1021/acs.inorgchem.6b02617
Calta, Nicholas P. ; Im, Jino ; Fang, Lei ; Chasapis, Thomas C. ; Bugaris, Daniel E. ; Chung, Duck Young ; Kwok, Wai Kwong ; Kanatzidis, Mercouri G. / Hybridization Gap in the Semiconducting Compound SrIr4In2Ge4 In: Inorganic Chemistry. 2016 ; Vol. 55, No. 23. pp. 12477-12481.
@article{328ea223fd9e4430a4b789bb33fa6fd1,
title = "Hybridization Gap in the Semiconducting Compound SrIr4In2Ge4",
abstract = "Large single crystals of SrIr4In2Ge4 were synthesized using the In flux method. This compound is a hybridization gap semiconductor with an experimental optical band gap of Eg = 0.25(3) eV. It crystallizes in the tetragonal EuIr4In2Ge4 structure type with space group I4̅2m and unit cell parameters a = 6.9004(5) {\AA} and c = 8.7120(9) {\AA}. The electronic structure is very similar to both EuIr4In2Ge4 and the parent structure Ca3Ir4Ge4, suggesting that these compounds comprise a new family of hybridization gap materials that exhibit indirect gap, semiconducting behavior at a valence electron count of 60 per formula unit, similar to the Heusler alloys.",
author = "Calta, {Nicholas P.} and Jino Im and Lei Fang and Chasapis, {Thomas C.} and Bugaris, {Daniel E.} and Chung, {Duck Young} and Kwok, {Wai Kwong} and Kanatzidis, {Mercouri G}",
year = "2016",
month = "12",
day = "5",
doi = "10.1021/acs.inorgchem.6b02617",
language = "English",
volume = "55",
pages = "12477--12481",
journal = "Inorganic Chemistry",
issn = "0020-1669",
publisher = "American Chemical Society",
number = "23",

}

TY - JOUR

T1 - Hybridization Gap in the Semiconducting Compound SrIr4In2Ge4

AU - Calta, Nicholas P.

AU - Im, Jino

AU - Fang, Lei

AU - Chasapis, Thomas C.

AU - Bugaris, Daniel E.

AU - Chung, Duck Young

AU - Kwok, Wai Kwong

AU - Kanatzidis, Mercouri G

PY - 2016/12/5

Y1 - 2016/12/5

N2 - Large single crystals of SrIr4In2Ge4 were synthesized using the In flux method. This compound is a hybridization gap semiconductor with an experimental optical band gap of Eg = 0.25(3) eV. It crystallizes in the tetragonal EuIr4In2Ge4 structure type with space group I4̅2m and unit cell parameters a = 6.9004(5) Å and c = 8.7120(9) Å. The electronic structure is very similar to both EuIr4In2Ge4 and the parent structure Ca3Ir4Ge4, suggesting that these compounds comprise a new family of hybridization gap materials that exhibit indirect gap, semiconducting behavior at a valence electron count of 60 per formula unit, similar to the Heusler alloys.

AB - Large single crystals of SrIr4In2Ge4 were synthesized using the In flux method. This compound is a hybridization gap semiconductor with an experimental optical band gap of Eg = 0.25(3) eV. It crystallizes in the tetragonal EuIr4In2Ge4 structure type with space group I4̅2m and unit cell parameters a = 6.9004(5) Å and c = 8.7120(9) Å. The electronic structure is very similar to both EuIr4In2Ge4 and the parent structure Ca3Ir4Ge4, suggesting that these compounds comprise a new family of hybridization gap materials that exhibit indirect gap, semiconducting behavior at a valence electron count of 60 per formula unit, similar to the Heusler alloys.

UR - http://www.scopus.com/inward/record.url?scp=85002444307&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85002444307&partnerID=8YFLogxK

U2 - 10.1021/acs.inorgchem.6b02617

DO - 10.1021/acs.inorgchem.6b02617

M3 - Article

AN - SCOPUS:85002444307

VL - 55

SP - 12477

EP - 12481

JO - Inorganic Chemistry

JF - Inorganic Chemistry

SN - 0020-1669

IS - 23

ER -