Hydrogen plasma etching of GaAs oxide

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Abstract

Hydrogen plasma has been used to etch native-grown GaAs oxide on GaAs substrates. It is found that the rate of etching increases with gas pressure (in the range 10-300 μ) and the rf power (in the range 10-400 W) of the discharge. A typical etch rate of ≊20 Å/sec can be easily achieved. The selectivity (determined by scanning electron microscopy) of the oxide etch over the substrate is ≊2. An etch mechanism is proposed, and the use of hydrogen plasma for surface preparation of GaAs and the etching of oxides on other semiconductor materials will be discussed.

Original languageEnglish
Pages (from-to)898-899
Number of pages2
JournalApplied Physics Letters
Volume38
Issue number11
DOIs
Publication statusPublished - 1981

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hydrogen plasma
plasma etching
oxides
etching
gas pressure
selectivity
preparation
scanning electron microscopy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Hydrogen plasma etching of GaAs oxide. / Chang, Robert P. H.; Darack, S.

In: Applied Physics Letters, Vol. 38, No. 11, 1981, p. 898-899.

Research output: Contribution to journalArticle

Chang, Robert P. H. ; Darack, S. / Hydrogen plasma etching of GaAs oxide. In: Applied Physics Letters. 1981 ; Vol. 38, No. 11. pp. 898-899.
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