HYDROGEN PLASMA ETCHING OF SEMICONDUCTORS AND THEIR OXIDES.

Robert P. H. Chang, C. C. Chang, S. Darack

Research output: Contribution to journalArticle

122 Citations (Scopus)

Abstract

Hydrogen plasmas were used to etch surfaces of semiconducting materials (e. g. , GaAs, GaSb, InP, Si), their oxides, and Si nitride. Using a combination of analytical techniques - spectroscopic ellipsometry, Auger spectroscopy, and scanning electron microscopy (SEM), the etch rates, the surface composition and morphology have been studied. It is demonstrated that the selective etching rate of hydrogen plasma for Si over SiO//2 is approximately 30, and that for GaAs oxide over GaAs is approximately 2. It is also shown that the hydrogen plasma etched (and air exposed) GaAs surfaces have a Ga/As concentration ratio nearly equal to that of the air cleaved GaAs surface. Similar results have also been obtained for GaSb. Hydrogen plasma etched InP shows surface segregation and is rich in In.

Original languageEnglish
Pages (from-to)45-50
Number of pages6
JournalJournal of vacuum science & technology
Volume20
Issue number1
DOIs
Publication statusPublished - Jan 1982

Fingerprint

Plasma etching
Semiconductor materials
Plasmas
Hydrogen
Oxides
Surface segregation
Spectroscopic ellipsometry
Air
Nitrides
Surface structure
Surface morphology
Etching
Spectroscopy
Scanning electron microscopy

ASJC Scopus subject areas

  • Engineering(all)

Cite this

HYDROGEN PLASMA ETCHING OF SEMICONDUCTORS AND THEIR OXIDES. / Chang, Robert P. H.; Chang, C. C.; Darack, S.

In: Journal of vacuum science & technology, Vol. 20, No. 1, 01.1982, p. 45-50.

Research output: Contribution to journalArticle

@article{71400bef5afe48029ee200b76dab8bbb,
title = "HYDROGEN PLASMA ETCHING OF SEMICONDUCTORS AND THEIR OXIDES.",
abstract = "Hydrogen plasmas were used to etch surfaces of semiconducting materials (e. g. , GaAs, GaSb, InP, Si), their oxides, and Si nitride. Using a combination of analytical techniques - spectroscopic ellipsometry, Auger spectroscopy, and scanning electron microscopy (SEM), the etch rates, the surface composition and morphology have been studied. It is demonstrated that the selective etching rate of hydrogen plasma for Si over SiO//2 is approximately 30, and that for GaAs oxide over GaAs is approximately 2. It is also shown that the hydrogen plasma etched (and air exposed) GaAs surfaces have a Ga/As concentration ratio nearly equal to that of the air cleaved GaAs surface. Similar results have also been obtained for GaSb. Hydrogen plasma etched InP shows surface segregation and is rich in In.",
author = "Chang, {Robert P. H.} and Chang, {C. C.} and S. Darack",
year = "1982",
month = "1",
doi = "10.1116/1.571307",
language = "English",
volume = "20",
pages = "45--50",
journal = "Journal of Vacuum Science and Technology",
issn = "0022-5355",
publisher = "American Institute of Physics Publising LLC",
number = "1",

}

TY - JOUR

T1 - HYDROGEN PLASMA ETCHING OF SEMICONDUCTORS AND THEIR OXIDES.

AU - Chang, Robert P. H.

AU - Chang, C. C.

AU - Darack, S.

PY - 1982/1

Y1 - 1982/1

N2 - Hydrogen plasmas were used to etch surfaces of semiconducting materials (e. g. , GaAs, GaSb, InP, Si), their oxides, and Si nitride. Using a combination of analytical techniques - spectroscopic ellipsometry, Auger spectroscopy, and scanning electron microscopy (SEM), the etch rates, the surface composition and morphology have been studied. It is demonstrated that the selective etching rate of hydrogen plasma for Si over SiO//2 is approximately 30, and that for GaAs oxide over GaAs is approximately 2. It is also shown that the hydrogen plasma etched (and air exposed) GaAs surfaces have a Ga/As concentration ratio nearly equal to that of the air cleaved GaAs surface. Similar results have also been obtained for GaSb. Hydrogen plasma etched InP shows surface segregation and is rich in In.

AB - Hydrogen plasmas were used to etch surfaces of semiconducting materials (e. g. , GaAs, GaSb, InP, Si), their oxides, and Si nitride. Using a combination of analytical techniques - spectroscopic ellipsometry, Auger spectroscopy, and scanning electron microscopy (SEM), the etch rates, the surface composition and morphology have been studied. It is demonstrated that the selective etching rate of hydrogen plasma for Si over SiO//2 is approximately 30, and that for GaAs oxide over GaAs is approximately 2. It is also shown that the hydrogen plasma etched (and air exposed) GaAs surfaces have a Ga/As concentration ratio nearly equal to that of the air cleaved GaAs surface. Similar results have also been obtained for GaSb. Hydrogen plasma etched InP shows surface segregation and is rich in In.

UR - http://www.scopus.com/inward/record.url?scp=0019930821&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0019930821&partnerID=8YFLogxK

U2 - 10.1116/1.571307

DO - 10.1116/1.571307

M3 - Article

VL - 20

SP - 45

EP - 50

JO - Journal of Vacuum Science and Technology

JF - Journal of Vacuum Science and Technology

SN - 0022-5355

IS - 1

ER -