Hydrogen ratios and profiles in deposited amorphous and polycrystalline films and in metals using nuclear techniques

R. E. Benenson, Leonard C Feldman, B. G. Bagley

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Abstract

Plasma- and chemical vapor deposited films containing hydrogen, Si, B and O, but of unknown thickness and stoichiometry have been assigned concentration ratios through a combination of H-profiling using the 1H(15N, αγ)12C(4.43 MeV) reaction and RBS analysis. Relatively intense 15N++ beams exceeding the 6.38 MeV resonance energy have been obtained from a 3.75 MeV accelerator with a commercial ion source and terminal analysis. A discussion is given of the method of obtaining film concentration ratios in some representative cases. A search was made for H at the SiO2Si interface. Some preliminary investigations have been made on the H concentration in several metals as supplied: Nb, V, Ta, Al, Ni, OFHC Cu, Ti, Mo and steel and on the effect of acid dips in loading H. Hydrogen in acid-loaded steel migrated under the influence of the probing 15N beam, but relaxed back when the beam was removed.

Original languageEnglish
Pages (from-to)547-550
Number of pages4
JournalNuclear Instruments and Methods
Volume168
Issue number1-3
DOIs
Publication statusPublished - 1980

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Hydrogen ratios and profiles in deposited amorphous and polycrystalline films and in metals using nuclear techniques. / Benenson, R. E.; Feldman, Leonard C; Bagley, B. G.

In: Nuclear Instruments and Methods, Vol. 168, No. 1-3, 1980, p. 547-550.

Research output: Contribution to journalArticle

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