Hydrogen ratios and profiles in deposited amorphous and polycrystalline films and in metals using nuclear techniques

R. E. Benenson; Leonard C Feldman; B. G. Bagley

doi:10.1016/0029-554X(80)91308-7

Hydrogen ratios and profiles in deposited amorphous and polycrystalline films and in metals using nuclear techniques

R. E. Benenson, Leonard C Feldman, B. G. Bagley

Rutgers University

Research output: Contribution to journal › Article

12 Citations (Scopus)

Abstract

Plasma- and chemical vapor deposited films containing hydrogen, Si, B and O, but of unknown thickness and stoichiometry have been assigned concentration ratios through a combination of H-profiling using the ¹H(¹⁵N, αγ)¹²C(4.43 MeV) reaction and RBS analysis. Relatively intense ¹⁵N⁺⁺ beams exceeding the 6.38 MeV resonance energy have been obtained from a 3.75 MeV accelerator with a commercial ion source and terminal analysis. A discussion is given of the method of obtaining film concentration ratios in some representative cases. A search was made for H at the SiO₂Si interface. Some preliminary investigations have been made on the H concentration in several metals as supplied: Nb, V, Ta, Al, Ni, OFHC Cu, Ti, Mo and steel and on the effect of acid dips in loading H. Hydrogen in acid-loaded steel migrated under the influence of the probing ¹⁵N beam, but relaxed back when the beam was removed.

Original language	English
Pages (from-to)	547-550
Number of pages	4
Journal	Nuclear Instruments and Methods
Volume	168
Issue number	1-3
DOIs	https://doi.org/10.1016/0029-554X(80)91308-7
Publication status	Published - 1980

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Benenson, R. E., Feldman, L. C., & Bagley, B. G. (1980). Hydrogen ratios and profiles in deposited amorphous and polycrystalline films and in metals using nuclear techniques. Nuclear Instruments and Methods, 168(1-3), 547-550. https://doi.org/10.1016/0029-554X(80)91308-7

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abstract = "Plasma- and chemical vapor deposited films containing hydrogen, Si, B and O, but of unknown thickness and stoichiometry have been assigned concentration ratios through a combination of H-profiling using the 1H(15N, αγ)12C(4.43 MeV) reaction and RBS analysis. Relatively intense 15N++ beams exceeding the 6.38 MeV resonance energy have been obtained from a 3.75 MeV accelerator with a commercial ion source and terminal analysis. A discussion is given of the method of obtaining film concentration ratios in some representative cases. A search was made for H at the SiO2Si interface. Some preliminary investigations have been made on the H concentration in several metals as supplied: Nb, V, Ta, Al, Ni, OFHC Cu, Ti, Mo and steel and on the effect of acid dips in loading H. Hydrogen in acid-loaded steel migrated under the influence of the probing 15N beam, but relaxed back when the beam was removed.",

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AU - Benenson, R. E.

AU - Feldman, Leonard C

AU - Bagley, B. G.

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N2 - Plasma- and chemical vapor deposited films containing hydrogen, Si, B and O, but of unknown thickness and stoichiometry have been assigned concentration ratios through a combination of H-profiling using the 1H(15N, αγ)12C(4.43 MeV) reaction and RBS analysis. Relatively intense 15N++ beams exceeding the 6.38 MeV resonance energy have been obtained from a 3.75 MeV accelerator with a commercial ion source and terminal analysis. A discussion is given of the method of obtaining film concentration ratios in some representative cases. A search was made for H at the SiO2Si interface. Some preliminary investigations have been made on the H concentration in several metals as supplied: Nb, V, Ta, Al, Ni, OFHC Cu, Ti, Mo and steel and on the effect of acid dips in loading H. Hydrogen in acid-loaded steel migrated under the influence of the probing 15N beam, but relaxed back when the beam was removed.

AB - Plasma- and chemical vapor deposited films containing hydrogen, Si, B and O, but of unknown thickness and stoichiometry have been assigned concentration ratios through a combination of H-profiling using the 1H(15N, αγ)12C(4.43 MeV) reaction and RBS analysis. Relatively intense 15N++ beams exceeding the 6.38 MeV resonance energy have been obtained from a 3.75 MeV accelerator with a commercial ion source and terminal analysis. A discussion is given of the method of obtaining film concentration ratios in some representative cases. A search was made for H at the SiO2Si interface. Some preliminary investigations have been made on the H concentration in several metals as supplied: Nb, V, Ta, Al, Ni, OFHC Cu, Ti, Mo and steel and on the effect of acid dips in loading H. Hydrogen in acid-loaded steel migrated under the influence of the probing 15N beam, but relaxed back when the beam was removed.

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