Hysteresis, switching, and negative differential resistance in molecular junctions: A polaron model

Michael Galperin, Mark A. Ratner, Abraham Nitzan

Research output: Contribution to journalArticle

253 Citations (Scopus)


Within a simple mean-field model (self-consistent Hartree approximation) we discuss the possibility of polaron formation on a molecular wire as a mechanism for negative differential resistance (NDR), switching, and/or hysteresis in the I-V characteristic of molecular junctions. This mechanism differs from earlier proposed mechanisms of charging and conformational change. The polaron model captures the essential physics and provides qualitative correspondence with experimental data. The importance of active redox centers in the molecule is indicated.

Original languageEnglish
Pages (from-to)125-130
Number of pages6
JournalNano letters
Issue number1
Publication statusPublished - Jan 1 2005


ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this