Hysteresis, switching, and negative differential resistance in molecular junctions

A polaron model

Michael Galperin, Mark A Ratner, Abraham Nitzan

Research output: Contribution to journalArticle

245 Citations (Scopus)

Abstract

Within a simple mean-field model (self-consistent Hartree approximation) we discuss the possibility of polaron formation on a molecular wire as a mechanism for negative differential resistance (NDR), switching, and/or hysteresis in the I-V characteristic of molecular junctions. This mechanism differs from earlier proposed mechanisms of charging and conformational change. The polaron model captures the essential physics and provides qualitative correspondence with experimental data. The importance of active redox centers in the molecule is indicated.

Original languageEnglish
Pages (from-to)125-130
Number of pages6
JournalNano Letters
Volume5
Issue number1
DOIs
Publication statusPublished - Jan 2005

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Gene Conversion
Hysteresis
hysteresis
Hartree approximation
Physics
Wire
Molecules
charging
wire
physics
molecules
Oxidation-Reduction

ASJC Scopus subject areas

  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Chemistry (miscellaneous)

Cite this

Hysteresis, switching, and negative differential resistance in molecular junctions : A polaron model. / Galperin, Michael; Ratner, Mark A; Nitzan, Abraham.

In: Nano Letters, Vol. 5, No. 1, 01.2005, p. 125-130.

Research output: Contribution to journalArticle

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