I-V measurement method and its application for characterizing ferroelectric PZT thin films

S. C. Lee, G. Teowee, Dunbar P Birnie, D. P. Birnie, D. R. Uhlmann, K. F. Galloway

Research output: Chapter in Book/Report/Conference proceedingChapter

5 Citations (Scopus)

Abstract

A static I-V measurement method for ferroelectric thin films is developed to distinguish the leakage current from the switching current. The initial polarization state and the exponential decay behavior of the switching current are considered in this method. The feasibility of this I-V measurement method is investigated by examining fatigue effects on sol-gel derived PZT thin films. Changes in polarization due to fatigue are correlated with the changes in the switching current and the leakage current.

Original languageEnglish
Title of host publicationIntegrated Ferroelectrics
PublisherPubl by Gordon & Breach Science Publ Inc
Pages31-43
Number of pages13
Volume4
Edition1
Publication statusPublished - Feb 1994

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)
  • Condensed Matter Physics

Cite this

Lee, S. C., Teowee, G., Birnie, D. P., Birnie, D. P., Uhlmann, D. R., & Galloway, K. F. (1994). I-V measurement method and its application for characterizing ferroelectric PZT thin films. In Integrated Ferroelectrics (1 ed., Vol. 4, pp. 31-43). Publ by Gordon & Breach Science Publ Inc.