Identifying and characterizing epitaxial graphene domains on partially graphitized SiC(0001) surfaces using scanning probe microscopy

Joshua A. Kellar; Justice M.P. Alaboson; Qing Hua Wang; Mark C. Hersam

doi:10.1063/1.3378684

Identifying and characterizing epitaxial graphene domains on partially graphitized SiC(0001) surfaces using scanning probe microscopy

Joshua A. Kellar, Justice M.P. Alaboson, Qing Hua Wang, Mark C. Hersam

Northwestern University

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

Scanning tunneling microscopy (STM), atomic force microscopy (AFM), lateral force microscopy (LFM), and conductive AFM (cAFM) are employed to characterize epitaxial graphene on SiC(0001). Of particular interest are substrates that possess single-layer and bilayer graphene domains, which form during thermal decomposition of silicon from SiC(0001). Since these samples are often partially graphitized, characterization techniques are needed that can distinguish domains of epitaxial graphene from the adjacent (6√3×6√3) R30° reconstructed SiC(0001) surface. The relative merits of STM, AFM, LFM, and cAFM for this purpose are outlined, thus providing nanometer-scale strategies for identifying and characterizing epitaxial graphene.

Original language	English
Article number	143103
Journal	Applied Physics Letters
Volume	96
Issue number	14
DOIs	https://doi.org/10.1063/1.3378684
Publication status	Published - 2010

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{e879d70f3c744b2a8b59a04dd5b9429a,

title = "Identifying and characterizing epitaxial graphene domains on partially graphitized SiC(0001) surfaces using scanning probe microscopy",

abstract = "Scanning tunneling microscopy (STM), atomic force microscopy (AFM), lateral force microscopy (LFM), and conductive AFM (cAFM) are employed to characterize epitaxial graphene on SiC(0001). Of particular interest are substrates that possess single-layer and bilayer graphene domains, which form during thermal decomposition of silicon from SiC(0001). Since these samples are often partially graphitized, characterization techniques are needed that can distinguish domains of epitaxial graphene from the adjacent (6√3×6√3) R30° reconstructed SiC(0001) surface. The relative merits of STM, AFM, LFM, and cAFM for this purpose are outlined, thus providing nanometer-scale strategies for identifying and characterizing epitaxial graphene.",

author = "Kellar, {Joshua A.} and Alaboson, {Justice M.P.} and Wang, {Qing Hua} and Hersam, {Mark C.}",

note = "Funding Information: This work was supported by the National Science Foundation (Award Nos. EEC-0647560 and DMR-0520513), the Office of Naval Research (Award No. N00014-09-1-0180), and Argonne National Laboratory (ANL). ANL is a U.S. Department of Energy Office of Science Laboratory operated under Contract No. DE-AC02-06CH11357 by UChicago Argonne, LLC. The authors also thank Joseph Lyding for use of his STM control software. ",

year = "2010",

doi = "10.1063/1.3378684",

language = "English",

volume = "96",

journal = "Applied Physics Letters",

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T1 - Identifying and characterizing epitaxial graphene domains on partially graphitized SiC(0001) surfaces using scanning probe microscopy

AU - Kellar, Joshua A.

AU - Alaboson, Justice M.P.

AU - Wang, Qing Hua

AU - Hersam, Mark C.

N1 - Funding Information: This work was supported by the National Science Foundation (Award Nos. EEC-0647560 and DMR-0520513), the Office of Naval Research (Award No. N00014-09-1-0180), and Argonne National Laboratory (ANL). ANL is a U.S. Department of Energy Office of Science Laboratory operated under Contract No. DE-AC02-06CH11357 by UChicago Argonne, LLC. The authors also thank Joseph Lyding for use of his STM control software.

PY - 2010

Y1 - 2010

N2 - Scanning tunneling microscopy (STM), atomic force microscopy (AFM), lateral force microscopy (LFM), and conductive AFM (cAFM) are employed to characterize epitaxial graphene on SiC(0001). Of particular interest are substrates that possess single-layer and bilayer graphene domains, which form during thermal decomposition of silicon from SiC(0001). Since these samples are often partially graphitized, characterization techniques are needed that can distinguish domains of epitaxial graphene from the adjacent (6√3×6√3) R30° reconstructed SiC(0001) surface. The relative merits of STM, AFM, LFM, and cAFM for this purpose are outlined, thus providing nanometer-scale strategies for identifying and characterizing epitaxial graphene.

AB - Scanning tunneling microscopy (STM), atomic force microscopy (AFM), lateral force microscopy (LFM), and conductive AFM (cAFM) are employed to characterize epitaxial graphene on SiC(0001). Of particular interest are substrates that possess single-layer and bilayer graphene domains, which form during thermal decomposition of silicon from SiC(0001). Since these samples are often partially graphitized, characterization techniques are needed that can distinguish domains of epitaxial graphene from the adjacent (6√3×6√3) R30° reconstructed SiC(0001) surface. The relative merits of STM, AFM, LFM, and cAFM for this purpose are outlined, thus providing nanometer-scale strategies for identifying and characterizing epitaxial graphene.

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