TY - JOUR
T1 - Identifying and characterizing epitaxial graphene domains on partially graphitized SiC(0001) surfaces using scanning probe microscopy
AU - Kellar, Joshua A.
AU - Alaboson, Justice M.P.
AU - Wang, Qing Hua
AU - Hersam, Mark C.
N1 - Funding Information:
This work was supported by the National Science Foundation (Award Nos. EEC-0647560 and DMR-0520513), the Office of Naval Research (Award No. N00014-09-1-0180), and Argonne National Laboratory (ANL). ANL is a U.S. Department of Energy Office of Science Laboratory operated under Contract No. DE-AC02-06CH11357 by UChicago Argonne, LLC. The authors also thank Joseph Lyding for use of his STM control software.
Copyright:
Copyright 2010 Elsevier B.V., All rights reserved.
PY - 2010
Y1 - 2010
N2 - Scanning tunneling microscopy (STM), atomic force microscopy (AFM), lateral force microscopy (LFM), and conductive AFM (cAFM) are employed to characterize epitaxial graphene on SiC(0001). Of particular interest are substrates that possess single-layer and bilayer graphene domains, which form during thermal decomposition of silicon from SiC(0001). Since these samples are often partially graphitized, characterization techniques are needed that can distinguish domains of epitaxial graphene from the adjacent (6√3×6√3) R30° reconstructed SiC(0001) surface. The relative merits of STM, AFM, LFM, and cAFM for this purpose are outlined, thus providing nanometer-scale strategies for identifying and characterizing epitaxial graphene.
AB - Scanning tunneling microscopy (STM), atomic force microscopy (AFM), lateral force microscopy (LFM), and conductive AFM (cAFM) are employed to characterize epitaxial graphene on SiC(0001). Of particular interest are substrates that possess single-layer and bilayer graphene domains, which form during thermal decomposition of silicon from SiC(0001). Since these samples are often partially graphitized, characterization techniques are needed that can distinguish domains of epitaxial graphene from the adjacent (6√3×6√3) R30° reconstructed SiC(0001) surface. The relative merits of STM, AFM, LFM, and cAFM for this purpose are outlined, thus providing nanometer-scale strategies for identifying and characterizing epitaxial graphene.
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U2 - 10.1063/1.3378684
DO - 10.1063/1.3378684
M3 - Article
AN - SCOPUS:77951151468
VL - 96
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 14
M1 - 143103
ER -