Abstract
Scanning tunneling microscopy (STM), atomic force microscopy (AFM), lateral force microscopy (LFM), and conductive AFM (cAFM) are employed to characterize epitaxial graphene on SiC(0001). Of particular interest are substrates that possess single-layer and bilayer graphene domains, which form during thermal decomposition of silicon from SiC(0001). Since these samples are often partially graphitized, characterization techniques are needed that can distinguish domains of epitaxial graphene from the adjacent (6√3×6√3) R30° reconstructed SiC(0001) surface. The relative merits of STM, AFM, LFM, and cAFM for this purpose are outlined, thus providing nanometer-scale strategies for identifying and characterizing epitaxial graphene.
| Original language | English |
|---|---|
| Article number | 143103 |
| Journal | Applied Physics Letters |
| Volume | 96 |
| Issue number | 14 |
| DOIs | |
| Publication status | Published - 2010 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Identifying and characterizing epitaxial graphene domains on partially graphitized SiC(0001) surfaces using scanning probe microscopy. / Kellar, Joshua A.; Alaboson, Justice M P; Wang, Qing Hua; Hersam, Mark C.
In: Applied Physics Letters, Vol. 96, No. 14, 143103, 2010.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Identifying and characterizing epitaxial graphene domains on partially graphitized SiC(0001) surfaces using scanning probe microscopy
AU - Kellar, Joshua A.
AU - Alaboson, Justice M P
AU - Wang, Qing Hua
AU - Hersam, Mark C
PY - 2010
Y1 - 2010
N2 - Scanning tunneling microscopy (STM), atomic force microscopy (AFM), lateral force microscopy (LFM), and conductive AFM (cAFM) are employed to characterize epitaxial graphene on SiC(0001). Of particular interest are substrates that possess single-layer and bilayer graphene domains, which form during thermal decomposition of silicon from SiC(0001). Since these samples are often partially graphitized, characterization techniques are needed that can distinguish domains of epitaxial graphene from the adjacent (6√3×6√3) R30° reconstructed SiC(0001) surface. The relative merits of STM, AFM, LFM, and cAFM for this purpose are outlined, thus providing nanometer-scale strategies for identifying and characterizing epitaxial graphene.
AB - Scanning tunneling microscopy (STM), atomic force microscopy (AFM), lateral force microscopy (LFM), and conductive AFM (cAFM) are employed to characterize epitaxial graphene on SiC(0001). Of particular interest are substrates that possess single-layer and bilayer graphene domains, which form during thermal decomposition of silicon from SiC(0001). Since these samples are often partially graphitized, characterization techniques are needed that can distinguish domains of epitaxial graphene from the adjacent (6√3×6√3) R30° reconstructed SiC(0001) surface. The relative merits of STM, AFM, LFM, and cAFM for this purpose are outlined, thus providing nanometer-scale strategies for identifying and characterizing epitaxial graphene.
UR - http://www.scopus.com/inward/record.url?scp=77951151468&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77951151468&partnerID=8YFLogxK
U2 - 10.1063/1.3378684
DO - 10.1063/1.3378684
M3 - Article
AN - SCOPUS:77951151468
VL - 96
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 14
M1 - 143103
ER -