Identifying and characterizing epitaxial graphene domains on partially graphitized SiC(0001) surfaces using scanning probe microscopy

Joshua A. Kellar, Justice M P Alaboson, Qing Hua Wang, Mark C Hersam

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33 Citations (Scopus)

Abstract

Scanning tunneling microscopy (STM), atomic force microscopy (AFM), lateral force microscopy (LFM), and conductive AFM (cAFM) are employed to characterize epitaxial graphene on SiC(0001). Of particular interest are substrates that possess single-layer and bilayer graphene domains, which form during thermal decomposition of silicon from SiC(0001). Since these samples are often partially graphitized, characterization techniques are needed that can distinguish domains of epitaxial graphene from the adjacent (6√3×6√3) R30° reconstructed SiC(0001) surface. The relative merits of STM, AFM, LFM, and cAFM for this purpose are outlined, thus providing nanometer-scale strategies for identifying and characterizing epitaxial graphene.

Original languageEnglish
Article number143103
JournalApplied Physics Letters
Volume96
Issue number14
DOIs
Publication statusPublished - 2010

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graphene
atomic force microscopy
microscopy
scanning
probes
scanning tunneling microscopy
thermal decomposition
silicon

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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Identifying and characterizing epitaxial graphene domains on partially graphitized SiC(0001) surfaces using scanning probe microscopy. / Kellar, Joshua A.; Alaboson, Justice M P; Wang, Qing Hua; Hersam, Mark C.

In: Applied Physics Letters, Vol. 96, No. 14, 143103, 2010.

Research output: Contribution to journalArticle

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