IIIB-5 A Technique for Rapidly Alternating Boron and Arsenic Doping in Ion-Implanted Silicon Molecular Beam Epitaxy

J. H. McFee, R. G. Swartz, M. A. Voshchenkov, Leonard C Feldman, Y. Ota

Research output: Contribution to journal › Article

Original languageEnglish
Pages (from-to)1228-1229
Number of pages2
JournalIEEE Transactions on Electron Devices
Volume28
Issue number10
DOIs
Publication statusPublished - 1981

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Boron
Arsenic
Silicon
Molecular beam epitaxy
Doping (additives)
Ions

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

IIIB-5 A Technique for Rapidly Alternating Boron and Arsenic Doping in Ion-Implanted Silicon Molecular Beam Epitaxy. / McFee, J. H.; Swartz, R. G.; Voshchenkov, M. A.; Feldman, Leonard C; Ota, Y.

In: IEEE Transactions on Electron Devices, Vol. 28, No. 10, 1981, p. 1228-1229.

Research output: Contribution to journal › Article

McFee, JH, Swartz, RG, Voshchenkov, MA, Feldman, LC & Ota, Y 1981, 'IIIB-5 A Technique for Rapidly Alternating Boron and Arsenic Doping in Ion-Implanted Silicon Molecular Beam Epitaxy', IEEE Transactions on Electron Devices, vol. 28, no. 10, pp. 1228-1229. https://doi.org/10.1109/T-ED.1981.20546
McFee JH, Swartz RG, Voshchenkov MA, Feldman LC, Ota Y. IIIB-5 A Technique for Rapidly Alternating Boron and Arsenic Doping in Ion-Implanted Silicon Molecular Beam Epitaxy. IEEE Transactions on Electron Devices. 1981;28(10):1228-1229. https://doi.org/10.1109/T-ED.1981.20546
McFee, J. H. ; Swartz, R. G. ; Voshchenkov, M. A. ; Feldman, Leonard C ; Ota, Y. / IIIB-5 A Technique for Rapidly Alternating Boron and Arsenic Doping in Ion-Implanted Silicon Molecular Beam Epitaxy. In: IEEE Transactions on Electron Devices. 1981 ; Vol. 28, No. 10. pp. 1228-1229.
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