IIIB-5 A Technique for Rapidly Alternating Boron and Arsenic Doping in Ion-Implanted Silicon Molecular Beam Epitaxy

J. H. McFee, R. G. Swartz, M. A. Voshchenkov, Leonard C Feldman, Y. Ota

Research output: Contribution to journal › Article

Original language	English
Pages (from-to)	1228-1229
Number of pages	2
Journal	IEEE Transactions on Electron Devices
Volume	28
Issue number	10
DOIs	https://doi.org/10.1109/T-ED.1981.20546
Publication status	Published - 1981

Cite this

@article{57770c083fe544ca9877a62ba433851b,

title = "IIIB-5 A Technique for Rapidly Alternating Boron and Arsenic Doping in Ion-Implanted Silicon Molecular Beam Epitaxy",

author = "McFee, {J. H.} and Swartz, {R. G.} and Voshchenkov, {M. A.} and Feldman, {Leonard C} and Y. Ota",

year = "1981",

doi = "10.1109/T-ED.1981.20546",

language = "English",

volume = "28",

pages = "1228--1229",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

}

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T1 - IIIB-5 A Technique for Rapidly Alternating Boron and Arsenic Doping in Ion-Implanted Silicon Molecular Beam Epitaxy

AU - McFee, J. H.

AU - Swartz, R. G.

AU - Voshchenkov, M. A.

AU - Feldman, Leonard C

AU - Ota, Y.

PY - 1981

Y1 - 1981

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DO - 10.1109/T-ED.1981.20546

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SP - 1228

EP - 1229

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

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