IIIB-5 A Technique for Rapidly Alternating Boron and Arsenic Doping in Ion-Implanted Silicon Molecular Beam Epitaxy

J. H. McFee, R. G. Swartz, M. A. Voshchenkov, Leonard C Feldman, Y. Ota

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)1228-1229
Number of pages2
JournalIEEE Transactions on Electron Devices
Volume28
Issue number10
DOIs
Publication statusPublished - 1981

Fingerprint

Arsenic
Molecular beam epitaxy
Boron
Doping (additives)
Silicon
Ions

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

IIIB-5 A Technique for Rapidly Alternating Boron and Arsenic Doping in Ion-Implanted Silicon Molecular Beam Epitaxy. / McFee, J. H.; Swartz, R. G.; Voshchenkov, M. A.; Feldman, Leonard C; Ota, Y.

In: IEEE Transactions on Electron Devices, Vol. 28, No. 10, 1981, p. 1228-1229.

Research output: Contribution to journalArticle

@article{57770c083fe544ca9877a62ba433851b,
title = "IIIB-5 A Technique for Rapidly Alternating Boron and Arsenic Doping in Ion-Implanted Silicon Molecular Beam Epitaxy",
author = "McFee, {J. H.} and Swartz, {R. G.} and Voshchenkov, {M. A.} and Feldman, {Leonard C} and Y. Ota",
year = "1981",
doi = "10.1109/T-ED.1981.20546",
language = "English",
volume = "28",
pages = "1228--1229",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "10",

}

TY - JOUR

T1 - IIIB-5 A Technique for Rapidly Alternating Boron and Arsenic Doping in Ion-Implanted Silicon Molecular Beam Epitaxy

AU - McFee, J. H.

AU - Swartz, R. G.

AU - Voshchenkov, M. A.

AU - Feldman, Leonard C

AU - Ota, Y.

PY - 1981

Y1 - 1981

UR - http://www.scopus.com/inward/record.url?scp=84941508118&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84941508118&partnerID=8YFLogxK

U2 - 10.1109/T-ED.1981.20546

DO - 10.1109/T-ED.1981.20546

M3 - Article

VL - 28

SP - 1228

EP - 1229

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 10

ER -