IIIB-5 A Technique for Rapidly Alternating Boron and Arsenic Doping in Ion-Implanted Silicon Molecular Beam Epitaxy

J. H. McFee, R. G. Swartz, M. A. Voshchenkov, Leonard C Feldman, Y. Ota

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)1228-1229
Number of pages2
JournalIEEE Transactions on Electron Devices
Volume28
Issue number10
DOIs
Publication statusPublished - 1981

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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