@article{57770c083fe544ca9877a62ba433851b,
title = "IIIB-5 A Technique for Rapidly Alternating Boron and Arsenic Doping in Ion-Implanted Silicon Molecular Beam Epitaxy",
author = "McFee, {J. H.} and Swartz, {R. G.} and Voshchenkov, {M. A.} and Feldman, {Leonard C} and Y. Ota",
year = "1981",
doi = "10.1109/T-ED.1981.20546",
language = "English",
volume = "28",
pages = "1228--1229",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "10",
}