Abstract
We present a method to calculate impact ionization and Auger recombination rates within density functional theory and a screened-exchange approach and implement it in the all-electron FLAPW method. We investigate the dependence of the overlap matrix elements as a function of the states involved along the main symmetry lines of the Brillouin zone. Our results for the final impact ionization rates along Γ - X and Γ - L directions for GaAs show a strong anisotropy imposed by energy and momentum conservation and related to the use of a realistic and accurate sX-LDA band structure.
| Original language | English |
|---|---|
| Title of host publication | Materials Research Society Symposium - Proceedings |
| Editors | V Bulatov, L Colombo, F Cleri, L Lewis, N Mousseau |
| Volume | 677 |
| Publication status | Published - 2001 |
| Event | Advances in Materials Therory and Modeling - Bridging Over Multiple Length and Time Scales - San Francisco, CA, United States Duration: Apr 16 2001 → Apr 20 2001 |
Other
| Other | Advances in Materials Therory and Modeling - Bridging Over Multiple Length and Time Scales |
|---|---|
| Country | United States |
| City | San Francisco, CA |
| Period | 4/16/01 → 4/20/01 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
Cite this
Picozzi, S., Continenza, A., Asahi, R., Mannstadt, W., Geller, C. B., & Freeman, A. J. (2001). Impact ionization and Auger recombination in semiconductors: Implementation within the FLAPW code. In V. Bulatov, L. Colombo, F. Cleri, L. Lewis, & N. Mousseau (Eds.), Materials Research Society Symposium - Proceedings (Vol. 677)