Abstract
We present a method to calculate impact ionization and Auger recombination rates within density functional theory and a screened-exchange approach and implement it in the all-electron FLAPW method. We investigate the dependence of the overlap matrix elements as a function of the states involved along the main symmetry lines of the Brillouin zone. Our results for the final impact ionization rates along Γ - X and Γ - L directions for GaAs show a strong anisotropy imposed by energy and momentum conservation and related to the use of a realistic and accurate sX-LDA band structure.
| Original language | English |
|---|---|
| Title of host publication | Materials Research Society Symposium - Proceedings |
| Editors | V Bulatov, L Colombo, F Cleri, L Lewis, N Mousseau |
| Volume | 677 |
| Publication status | Published - 2001 |
| Event | Advances in Materials Therory and Modeling - Bridging Over Multiple Length and Time Scales - San Francisco, CA, United States Duration: Apr 16 2001 → Apr 20 2001 |
Other
| Other | Advances in Materials Therory and Modeling - Bridging Over Multiple Length and Time Scales |
|---|---|
| Country | United States |
| City | San Francisco, CA |
| Period | 4/16/01 → 4/20/01 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
Cite this
Impact ionization and Auger recombination in semiconductors : Implementation within the FLAPW code. / Picozzi, S.; Continenza, A.; Asahi, R.; Mannstadt, W.; Geller, C. B.; Freeman, A. J.
Materials Research Society Symposium - Proceedings. ed. / V Bulatov; L Colombo; F Cleri; L Lewis; N Mousseau. Vol. 677 2001.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
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TY - GEN
T1 - Impact ionization and Auger recombination in semiconductors
T2 - Implementation within the FLAPW code
AU - Picozzi, S.
AU - Continenza, A.
AU - Asahi, R.
AU - Mannstadt, W.
AU - Geller, C. B.
AU - Freeman, A. J.
PY - 2001
Y1 - 2001
N2 - We present a method to calculate impact ionization and Auger recombination rates within density functional theory and a screened-exchange approach and implement it in the all-electron FLAPW method. We investigate the dependence of the overlap matrix elements as a function of the states involved along the main symmetry lines of the Brillouin zone. Our results for the final impact ionization rates along Γ - X and Γ - L directions for GaAs show a strong anisotropy imposed by energy and momentum conservation and related to the use of a realistic and accurate sX-LDA band structure.
AB - We present a method to calculate impact ionization and Auger recombination rates within density functional theory and a screened-exchange approach and implement it in the all-electron FLAPW method. We investigate the dependence of the overlap matrix elements as a function of the states involved along the main symmetry lines of the Brillouin zone. Our results for the final impact ionization rates along Γ - X and Γ - L directions for GaAs show a strong anisotropy imposed by energy and momentum conservation and related to the use of a realistic and accurate sX-LDA band structure.
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UR - http://www.scopus.com/inward/citedby.url?scp=0035742991&partnerID=8YFLogxK
M3 - Conference contribution
VL - 677
BT - Materials Research Society Symposium - Proceedings
A2 - Bulatov, V
A2 - Colombo, L
A2 - Cleri, F
A2 - Lewis, L
A2 - Mousseau, N
ER -