Impact ionization and Auger recombination in semiconductors

Implementation within the FLAPW code

S. Picozzi, A. Continenza, R. Asahi, W. Mannstadt, C. B. Geller, A. J. Freeman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present a method to calculate impact ionization and Auger recombination rates within density functional theory and a screened-exchange approach and implement it in the all-electron FLAPW method. We investigate the dependence of the overlap matrix elements as a function of the states involved along the main symmetry lines of the Brillouin zone. Our results for the final impact ionization rates along Γ - X and Γ - L directions for GaAs show a strong anisotropy imposed by energy and momentum conservation and related to the use of a realistic and accurate sX-LDA band structure.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsV Bulatov, L Colombo, F Cleri, L Lewis, N Mousseau
Volume677
Publication statusPublished - 2001
EventAdvances in Materials Therory and Modeling - Bridging Over Multiple Length and Time Scales - San Francisco, CA, United States
Duration: Apr 16 2001Apr 20 2001

Other

OtherAdvances in Materials Therory and Modeling - Bridging Over Multiple Length and Time Scales
CountryUnited States
CitySan Francisco, CA
Period4/16/014/20/01

Fingerprint

Impact ionization
Semiconductor materials
Band structure
Density functional theory
Conservation
Momentum
Anisotropy
Electrons
Direction compound
gallium arsenide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Picozzi, S., Continenza, A., Asahi, R., Mannstadt, W., Geller, C. B., & Freeman, A. J. (2001). Impact ionization and Auger recombination in semiconductors: Implementation within the FLAPW code. In V. Bulatov, L. Colombo, F. Cleri, L. Lewis, & N. Mousseau (Eds.), Materials Research Society Symposium - Proceedings (Vol. 677)

Impact ionization and Auger recombination in semiconductors : Implementation within the FLAPW code. / Picozzi, S.; Continenza, A.; Asahi, R.; Mannstadt, W.; Geller, C. B.; Freeman, A. J.

Materials Research Society Symposium - Proceedings. ed. / V Bulatov; L Colombo; F Cleri; L Lewis; N Mousseau. Vol. 677 2001.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Picozzi, S, Continenza, A, Asahi, R, Mannstadt, W, Geller, CB & Freeman, AJ 2001, Impact ionization and Auger recombination in semiconductors: Implementation within the FLAPW code. in V Bulatov, L Colombo, F Cleri, L Lewis & N Mousseau (eds), Materials Research Society Symposium - Proceedings. vol. 677, Advances in Materials Therory and Modeling - Bridging Over Multiple Length and Time Scales, San Francisco, CA, United States, 4/16/01.
Picozzi S, Continenza A, Asahi R, Mannstadt W, Geller CB, Freeman AJ. Impact ionization and Auger recombination in semiconductors: Implementation within the FLAPW code. In Bulatov V, Colombo L, Cleri F, Lewis L, Mousseau N, editors, Materials Research Society Symposium - Proceedings. Vol. 677. 2001
Picozzi, S. ; Continenza, A. ; Asahi, R. ; Mannstadt, W. ; Geller, C. B. ; Freeman, A. J. / Impact ionization and Auger recombination in semiconductors : Implementation within the FLAPW code. Materials Research Society Symposium - Proceedings. editor / V Bulatov ; L Colombo ; F Cleri ; L Lewis ; N Mousseau. Vol. 677 2001.
@inproceedings{d3ec028a22164043b5eb6f0620c73ee7,
title = "Impact ionization and Auger recombination in semiconductors: Implementation within the FLAPW code",
abstract = "We present a method to calculate impact ionization and Auger recombination rates within density functional theory and a screened-exchange approach and implement it in the all-electron FLAPW method. We investigate the dependence of the overlap matrix elements as a function of the states involved along the main symmetry lines of the Brillouin zone. Our results for the final impact ionization rates along Γ - X and Γ - L directions for GaAs show a strong anisotropy imposed by energy and momentum conservation and related to the use of a realistic and accurate sX-LDA band structure.",
author = "S. Picozzi and A. Continenza and R. Asahi and W. Mannstadt and Geller, {C. B.} and Freeman, {A. J.}",
year = "2001",
language = "English",
volume = "677",
editor = "V Bulatov and L Colombo and F Cleri and L Lewis and N Mousseau",
booktitle = "Materials Research Society Symposium - Proceedings",

}

TY - GEN

T1 - Impact ionization and Auger recombination in semiconductors

T2 - Implementation within the FLAPW code

AU - Picozzi, S.

AU - Continenza, A.

AU - Asahi, R.

AU - Mannstadt, W.

AU - Geller, C. B.

AU - Freeman, A. J.

PY - 2001

Y1 - 2001

N2 - We present a method to calculate impact ionization and Auger recombination rates within density functional theory and a screened-exchange approach and implement it in the all-electron FLAPW method. We investigate the dependence of the overlap matrix elements as a function of the states involved along the main symmetry lines of the Brillouin zone. Our results for the final impact ionization rates along Γ - X and Γ - L directions for GaAs show a strong anisotropy imposed by energy and momentum conservation and related to the use of a realistic and accurate sX-LDA band structure.

AB - We present a method to calculate impact ionization and Auger recombination rates within density functional theory and a screened-exchange approach and implement it in the all-electron FLAPW method. We investigate the dependence of the overlap matrix elements as a function of the states involved along the main symmetry lines of the Brillouin zone. Our results for the final impact ionization rates along Γ - X and Γ - L directions for GaAs show a strong anisotropy imposed by energy and momentum conservation and related to the use of a realistic and accurate sX-LDA band structure.

UR - http://www.scopus.com/inward/record.url?scp=0035742991&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035742991&partnerID=8YFLogxK

M3 - Conference contribution

VL - 677

BT - Materials Research Society Symposium - Proceedings

A2 - Bulatov, V

A2 - Colombo, L

A2 - Cleri, F

A2 - Lewis, L

A2 - Mousseau, N

ER -