Impact ionization and Auger recombination in semiconductors

Implementation within the FLAPW code

S. Picozzi, A. Continenza, R. Asahi, W. Mannstadt, C. B. Geller, Arthur J Freeman

Research output: Contribution to journalArticle

Abstract

We present a method to calculate impact ionization and Auger recombination rates within density functional theory and a screened-exchange approach and implement it in the all-electron FLAPW method. We investigate the dependence of the overlap matrix elements as a function of the states involved along the main symmetry lines of the Brillouin zone. Our results for the final impact ionization rates along Γ - X and Γ - L directions for GaAs show a strong anisotropy imposed by energy and momentum conservation and related to the use of a realistic and accurate sX-LDA band structure.

Original languageEnglish
Pages (from-to)AA4.17.1-AA4.17.6
JournalMaterials Research Society Symposium - Proceedings
Volume677
Publication statusPublished - 2001

Fingerprint

Impact ionization
Semiconductor materials
ionization
energy conservation
Brillouin zones
Band structure
Density functional theory
conservation
Conservation
Momentum
Anisotropy
density functional theory
momentum
anisotropy
Electrons
symmetry
matrices
electrons
Direction compound
gallium arsenide

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Impact ionization and Auger recombination in semiconductors : Implementation within the FLAPW code. / Picozzi, S.; Continenza, A.; Asahi, R.; Mannstadt, W.; Geller, C. B.; Freeman, Arthur J.

In: Materials Research Society Symposium - Proceedings, Vol. 677, 2001, p. AA4.17.1-AA4.17.6.

Research output: Contribution to journalArticle

Picozzi, S. ; Continenza, A. ; Asahi, R. ; Mannstadt, W. ; Geller, C. B. ; Freeman, Arthur J. / Impact ionization and Auger recombination in semiconductors : Implementation within the FLAPW code. In: Materials Research Society Symposium - Proceedings. 2001 ; Vol. 677. pp. AA4.17.1-AA4.17.6.
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