Impact ionization and Auger recombination in semiconductors: Implementation within the FLAPW code

S. Picozzi, A. Continenza, R. Asahi, W. Mannstadt, C. B. Geller, Arthur J Freeman

Research output: Contribution to journalArticle

Abstract

We present a method to calculate impact ionization and Auger recombination rates within density functional theory and a screened-exchange approach and implement it in the all-electron FLAPW method. We investigate the dependence of the overlap matrix elements as a function of the states involved along the main symmetry lines of the Brillouin zone. Our results for the final impact ionization rates along Γ - X and Γ - L directions for GaAs show a strong anisotropy imposed by energy and momentum conservation and related to the use of a realistic and accurate sX-LDA band structure.

Original languageEnglish
Pages (from-to)AA4.17.1-AA4.17.6
JournalMaterials Research Society Symposium - Proceedings
Volume677
Publication statusPublished - 2001

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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