Impact of boron diffusion through O2 and N2O gate dielectrics on the process margin of dual-poly low power CMOS

K. S. Krisch, L. Manchanda, F. H. Baumann, M. L. Green, D. Brasen, Leonard C Feldman, A. Ourmazd

Research output: Chapter in Book/Report/Conference proceedingConference contribution

24 Citations (Scopus)

Abstract

This work evaluates the impact of boron penetration from p+-polysilicon on process margin and system performance. We experimentally demonstrate that small (3σ = ±3 angstroms) variations in gate oxide thickness, coupled with boron penetration, can increase the spread in threshold voltages by ±100 mV or more. By inhibiting boron penetration, N2O-grown oxides are shown to improve VT control, thereby enhancing the process margin. We present a physically-based model to describe boron penetration as a function on tox, and analyze the impact of increased VT variation on subthreshold leakage current and on the resultant off-state power consumption.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting
PublisherIEEE
Pages325-328
Number of pages4
Publication statusPublished - 1994
EventProceedings of the 1994 IEEE International Electron Devices Meeting - San Francisco, CA, USA
Duration: Dec 11 1994Dec 14 1994

Other

OtherProceedings of the 1994 IEEE International Electron Devices Meeting
CitySan Francisco, CA, USA
Period12/11/9412/14/94

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Gate dielectrics
Boron
Oxides
Threshold voltage
Polysilicon
Leakage currents
Electric power utilization

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Krisch, K. S., Manchanda, L., Baumann, F. H., Green, M. L., Brasen, D., Feldman, L. C., & Ourmazd, A. (1994). Impact of boron diffusion through O2 and N2O gate dielectrics on the process margin of dual-poly low power CMOS. In Technical Digest - International Electron Devices Meeting (pp. 325-328). IEEE.

Impact of boron diffusion through O2 and N2O gate dielectrics on the process margin of dual-poly low power CMOS. / Krisch, K. S.; Manchanda, L.; Baumann, F. H.; Green, M. L.; Brasen, D.; Feldman, Leonard C; Ourmazd, A.

Technical Digest - International Electron Devices Meeting. IEEE, 1994. p. 325-328.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Krisch, KS, Manchanda, L, Baumann, FH, Green, ML, Brasen, D, Feldman, LC & Ourmazd, A 1994, Impact of boron diffusion through O2 and N2O gate dielectrics on the process margin of dual-poly low power CMOS. in Technical Digest - International Electron Devices Meeting. IEEE, pp. 325-328, Proceedings of the 1994 IEEE International Electron Devices Meeting, San Francisco, CA, USA, 12/11/94.
Krisch KS, Manchanda L, Baumann FH, Green ML, Brasen D, Feldman LC et al. Impact of boron diffusion through O2 and N2O gate dielectrics on the process margin of dual-poly low power CMOS. In Technical Digest - International Electron Devices Meeting. IEEE. 1994. p. 325-328
Krisch, K. S. ; Manchanda, L. ; Baumann, F. H. ; Green, M. L. ; Brasen, D. ; Feldman, Leonard C ; Ourmazd, A. / Impact of boron diffusion through O2 and N2O gate dielectrics on the process margin of dual-poly low power CMOS. Technical Digest - International Electron Devices Meeting. IEEE, 1994. pp. 325-328
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