Impact of electron injection and temperature on minority carrier transport in alpha-irradiated ß-Ga2O3 Schottky rectifiers

Sushrut Modak, Leonid Chernyak, Sergey Khodorov, Igor Lubomirsky, Jiancheng Yang, Fan Ren, Stephen J. Pearton

Research output: Contribution to journalArticle

Abstract

The effect of electron injection on minority carrier transport in Si-doped β-Ga2O3 Schottky rectifiers with 18 MeV alpha particle exposure (fluences of 1012–1013 cm−2) was studied from room temperature to 120°C. Electron Beam-Induced Current technique in-situ in Scanning Electron Microscope was used to find the diffusion length of holes as a function of duration of electron injection and temperature for alpha-particle irradiated rectifiers and compared with non-irradiated reference devices. The activation energy for electron injection-induced effect on diffusion length for the alpha-particle irradiated sample was determined to be ∼ 49 meV as compared to ∼74 meV for the reference sample. The decrease in activation energy of the electron injection effect on diffusion length for irradiated sample is attributed to radiation-induced generation of additional shallow recombination centers closer to the conduction band edge.

Original languageEnglish
Pages (from-to)Q3050-Q3053
JournalECS Journal of Solid State Science and Technology
Volume8
Issue number7
DOIs
Publication statusPublished - Jan 1 2019

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Electron injection
Carrier transport
Electron temperature
Alpha particles
Activation energy
Induced currents
Conduction bands
Electron beams
Electron microscopes
Scanning
Radiation
Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Impact of electron injection and temperature on minority carrier transport in alpha-irradiated ß-Ga2O3 Schottky rectifiers. / Modak, Sushrut; Chernyak, Leonid; Khodorov, Sergey; Lubomirsky, Igor; Yang, Jiancheng; Ren, Fan; Pearton, Stephen J.

In: ECS Journal of Solid State Science and Technology, Vol. 8, No. 7, 01.01.2019, p. Q3050-Q3053.

Research output: Contribution to journalArticle

Modak, Sushrut ; Chernyak, Leonid ; Khodorov, Sergey ; Lubomirsky, Igor ; Yang, Jiancheng ; Ren, Fan ; Pearton, Stephen J. / Impact of electron injection and temperature on minority carrier transport in alpha-irradiated ß-Ga2O3 Schottky rectifiers. In: ECS Journal of Solid State Science and Technology. 2019 ; Vol. 8, No. 7. pp. Q3050-Q3053.
@article{b248316b2d4542afa054dab09cab8cf1,
title = "Impact of electron injection and temperature on minority carrier transport in alpha-irradiated {\ss}-Ga2O3 Schottky rectifiers",
abstract = "The effect of electron injection on minority carrier transport in Si-doped β-Ga2O3 Schottky rectifiers with 18 MeV alpha particle exposure (fluences of 1012–1013 cm−2) was studied from room temperature to 120°C. Electron Beam-Induced Current technique in-situ in Scanning Electron Microscope was used to find the diffusion length of holes as a function of duration of electron injection and temperature for alpha-particle irradiated rectifiers and compared with non-irradiated reference devices. The activation energy for electron injection-induced effect on diffusion length for the alpha-particle irradiated sample was determined to be ∼ 49 meV as compared to ∼74 meV for the reference sample. The decrease in activation energy of the electron injection effect on diffusion length for irradiated sample is attributed to radiation-induced generation of additional shallow recombination centers closer to the conduction band edge.",
author = "Sushrut Modak and Leonid Chernyak and Sergey Khodorov and Igor Lubomirsky and Jiancheng Yang and Fan Ren and Pearton, {Stephen J.}",
year = "2019",
month = "1",
day = "1",
doi = "10.1149/2.0101907jss",
language = "English",
volume = "8",
pages = "Q3050--Q3053",
journal = "ECS Journal of Solid State Science and Technology",
issn = "2162-8769",
publisher = "Electrochemical Society, Inc.",
number = "7",

}

TY - JOUR

T1 - Impact of electron injection and temperature on minority carrier transport in alpha-irradiated ß-Ga2O3 Schottky rectifiers

AU - Modak, Sushrut

AU - Chernyak, Leonid

AU - Khodorov, Sergey

AU - Lubomirsky, Igor

AU - Yang, Jiancheng

AU - Ren, Fan

AU - Pearton, Stephen J.

PY - 2019/1/1

Y1 - 2019/1/1

N2 - The effect of electron injection on minority carrier transport in Si-doped β-Ga2O3 Schottky rectifiers with 18 MeV alpha particle exposure (fluences of 1012–1013 cm−2) was studied from room temperature to 120°C. Electron Beam-Induced Current technique in-situ in Scanning Electron Microscope was used to find the diffusion length of holes as a function of duration of electron injection and temperature for alpha-particle irradiated rectifiers and compared with non-irradiated reference devices. The activation energy for electron injection-induced effect on diffusion length for the alpha-particle irradiated sample was determined to be ∼ 49 meV as compared to ∼74 meV for the reference sample. The decrease in activation energy of the electron injection effect on diffusion length for irradiated sample is attributed to radiation-induced generation of additional shallow recombination centers closer to the conduction band edge.

AB - The effect of electron injection on minority carrier transport in Si-doped β-Ga2O3 Schottky rectifiers with 18 MeV alpha particle exposure (fluences of 1012–1013 cm−2) was studied from room temperature to 120°C. Electron Beam-Induced Current technique in-situ in Scanning Electron Microscope was used to find the diffusion length of holes as a function of duration of electron injection and temperature for alpha-particle irradiated rectifiers and compared with non-irradiated reference devices. The activation energy for electron injection-induced effect on diffusion length for the alpha-particle irradiated sample was determined to be ∼ 49 meV as compared to ∼74 meV for the reference sample. The decrease in activation energy of the electron injection effect on diffusion length for irradiated sample is attributed to radiation-induced generation of additional shallow recombination centers closer to the conduction band edge.

UR - http://www.scopus.com/inward/record.url?scp=85072077760&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85072077760&partnerID=8YFLogxK

U2 - 10.1149/2.0101907jss

DO - 10.1149/2.0101907jss

M3 - Article

VL - 8

SP - Q3050-Q3053

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

SN - 2162-8769

IS - 7

ER -