Impact of electron injection and temperature on minority carrier transport in alpha-irradiated ß-Ga2O3 Schottky rectifiers

Sushrut Modak, Leonid Chernyak, Sergey Khodorov, Igor Lubomirsky, Jiancheng Yang, Fan Ren, Stephen J. Pearton

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The effect of electron injection on minority carrier transport in Si-doped β-Ga2O3 Schottky rectifiers with 18 MeV alpha particle exposure (fluences of 1012–1013 cm−2) was studied from room temperature to 120°C. Electron Beam-Induced Current technique in-situ in Scanning Electron Microscope was used to find the diffusion length of holes as a function of duration of electron injection and temperature for alpha-particle irradiated rectifiers and compared with non-irradiated reference devices. The activation energy for electron injection-induced effect on diffusion length for the alpha-particle irradiated sample was determined to be ∼ 49 meV as compared to ∼74 meV for the reference sample. The decrease in activation energy of the electron injection effect on diffusion length for irradiated sample is attributed to radiation-induced generation of additional shallow recombination centers closer to the conduction band edge.

Original languageEnglish
Pages (from-to)Q3050-Q3053
JournalECS Journal of Solid State Science and Technology
Volume8
Issue number7
DOIs
Publication statusPublished - Jan 1 2019

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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