Impact of nitridation on negative and positive charge buildup in SiC gate oxides

John Rozen; Sarit Dhar; John R. Williams; Leonard C. Feldman

doi:10.1109/ISDRS.2007.4422265

Impact of nitridation on negative and positive charge buildup in SiC gate oxides

John Rozen, Sarit Dhar, John R. Williams, Leonard C. Feldman

Rutgers University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	2007 International Semiconductor Device Research Symposium, ISDRS
DOIs	https://doi.org/10.1109/ISDRS.2007.4422265
Publication status	Published - Dec 1 2007
Event	2007 International Semiconductor Device Research Symposium, ISDRS - College Park, MD, United States Duration: Dec 12 2007 → Dec 14 2007

Publication series

Name	2007 International Semiconductor Device Research Symposium, ISDRS

Other

Other	2007 International Semiconductor Device Research Symposium, ISDRS
Country	United States
City	College Park, MD
Period	12/12/07 → 12/14/07

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/ISDRS.2007.4422265

Cite this

Impact of nitridation on negative and positive charge buildup in SiC gate oxides. / Rozen, John; Dhar, Sarit; Williams, John R.; Feldman, Leonard C.

2007 International Semiconductor Device Research Symposium, ISDRS. 2007. 4422265 (2007 International Semiconductor Device Research Symposium, ISDRS).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Rozen, J, Dhar, S, Williams, JR & Feldman, LC 2007, Impact of nitridation on negative and positive charge buildup in SiC gate oxides. in 2007 International Semiconductor Device Research Symposium, ISDRS., 4422265, 2007 International Semiconductor Device Research Symposium, ISDRS, 2007 International Semiconductor Device Research Symposium, ISDRS, College Park, MD, United States, 12/12/07. https://doi.org/10.1109/ISDRS.2007.4422265

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