| Original language | English |
|---|---|
| Title of host publication | 2007 International Semiconductor Device Research Symposium, ISDRS |
| DOIs | |
| Publication status | Published - 2007 |
| Event | 2007 International Semiconductor Device Research Symposium, ISDRS - College Park, MD, United States Duration: Dec 12 2007 → Dec 14 2007 |
Other
| Other | 2007 International Semiconductor Device Research Symposium, ISDRS |
|---|---|
| Country | United States |
| City | College Park, MD |
| Period | 12/12/07 → 12/14/07 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
Impact of nitridation on negative and positive charge buildup in SiC gate oxides. / Rozen, John; Dhar, Sarit; Williams, John R.; Feldman, Leonard C.
2007 International Semiconductor Device Research Symposium, ISDRS. 2007. 4422265.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Impact of nitridation on negative and positive charge buildup in SiC gate oxides
AU - Rozen, John
AU - Dhar, Sarit
AU - Williams, John R.
AU - Feldman, Leonard C
PY - 2007
Y1 - 2007
UR - http://www.scopus.com/inward/record.url?scp=44949181028&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=44949181028&partnerID=8YFLogxK
U2 - 10.1109/ISDRS.2007.4422265
DO - 10.1109/ISDRS.2007.4422265
M3 - Conference contribution
SN - 1424418917
SN - 9781424418916
BT - 2007 International Semiconductor Device Research Symposium, ISDRS
ER -