Impact of nitridation on negative and positive charge buildup in SiC gate oxides

John Rozen, Sarit Dhar, John R. Williams, Leonard C. Feldman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publication2007 International Semiconductor Device Research Symposium, ISDRS
DOIs
Publication statusPublished - Dec 1 2007
Event2007 International Semiconductor Device Research Symposium, ISDRS - College Park, MD, United States
Duration: Dec 12 2007Dec 14 2007

Publication series

Name2007 International Semiconductor Device Research Symposium, ISDRS

Other

Other2007 International Semiconductor Device Research Symposium, ISDRS
CountryUnited States
CityCollege Park, MD
Period12/12/0712/14/07

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Rozen, J., Dhar, S., Williams, J. R., & Feldman, L. C. (2007). Impact of nitridation on negative and positive charge buildup in SiC gate oxides. In 2007 International Semiconductor Device Research Symposium, ISDRS [4422265] (2007 International Semiconductor Device Research Symposium, ISDRS). https://doi.org/10.1109/ISDRS.2007.4422265