Impact of nitridation on negative and positive charge buildup in SiC gate oxides

John Rozen, Sarit Dhar, John R. Williams, Leonard C Feldman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publication2007 International Semiconductor Device Research Symposium, ISDRS
DOIs
Publication statusPublished - 2007
Event2007 International Semiconductor Device Research Symposium, ISDRS - College Park, MD, United States
Duration: Dec 12 2007Dec 14 2007

Other

Other2007 International Semiconductor Device Research Symposium, ISDRS
CountryUnited States
CityCollege Park, MD
Period12/12/0712/14/07

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Nitridation
Oxides

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Rozen, J., Dhar, S., Williams, J. R., & Feldman, L. C. (2007). Impact of nitridation on negative and positive charge buildup in SiC gate oxides. In 2007 International Semiconductor Device Research Symposium, ISDRS [4422265] https://doi.org/10.1109/ISDRS.2007.4422265

Impact of nitridation on negative and positive charge buildup in SiC gate oxides. / Rozen, John; Dhar, Sarit; Williams, John R.; Feldman, Leonard C.

2007 International Semiconductor Device Research Symposium, ISDRS. 2007. 4422265.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Rozen, J, Dhar, S, Williams, JR & Feldman, LC 2007, Impact of nitridation on negative and positive charge buildup in SiC gate oxides. in 2007 International Semiconductor Device Research Symposium, ISDRS., 4422265, 2007 International Semiconductor Device Research Symposium, ISDRS, College Park, MD, United States, 12/12/07. https://doi.org/10.1109/ISDRS.2007.4422265
Rozen J, Dhar S, Williams JR, Feldman LC. Impact of nitridation on negative and positive charge buildup in SiC gate oxides. In 2007 International Semiconductor Device Research Symposium, ISDRS. 2007. 4422265 https://doi.org/10.1109/ISDRS.2007.4422265
Rozen, John ; Dhar, Sarit ; Williams, John R. ; Feldman, Leonard C. / Impact of nitridation on negative and positive charge buildup in SiC gate oxides. 2007 International Semiconductor Device Research Symposium, ISDRS. 2007.
@inproceedings{99adb23f90174b798c8b08f71692d982,
title = "Impact of nitridation on negative and positive charge buildup in SiC gate oxides",
author = "John Rozen and Sarit Dhar and Williams, {John R.} and Feldman, {Leonard C}",
year = "2007",
doi = "10.1109/ISDRS.2007.4422265",
language = "English",
isbn = "1424418917",
booktitle = "2007 International Semiconductor Device Research Symposium, ISDRS",

}

TY - GEN

T1 - Impact of nitridation on negative and positive charge buildup in SiC gate oxides

AU - Rozen, John

AU - Dhar, Sarit

AU - Williams, John R.

AU - Feldman, Leonard C

PY - 2007

Y1 - 2007

UR - http://www.scopus.com/inward/record.url?scp=44949181028&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=44949181028&partnerID=8YFLogxK

U2 - 10.1109/ISDRS.2007.4422265

DO - 10.1109/ISDRS.2007.4422265

M3 - Conference contribution

SN - 1424418917

SN - 9781424418916

BT - 2007 International Semiconductor Device Research Symposium, ISDRS

ER -