Impact of nitridation on negative and positive charge buildup in SiC j gate oxides

John Rozen; Sarit Dhar; Sanwu Wang; V. V. Afanas'ev; S. T. Pantelides; J. R. Williams; L. C. Feldman

Impact of nitridation on negative and positive charge buildup in SiC j gate oxides

John Rozen, Sarit Dhar, Sanwu Wang, V. V. Afanas'ev, S. T. Pantelides, J. R. Williams, L. C. Feldman

Rutgers University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

We report on the effect of nitridation on the negative and positive charge buildup in SiC gate oxides during carrier injection. We observe that the incorporation of nitrogen at the SiO₂/SiC interface can enhance the reliability of the interface by suppressing the generation of interface states upon electron injection but that it can also degrade the oxide by creating additional hole traps. We relate these phenomena to the passivation of atomic-level defects by nitrogen.

Original language	English
Title of host publication	Silicon Carbide and Related Materials 2007
Editors	Akira Suzuki, Hajime Okumura, Kenji Fukuda, Shin-ichi Nishizawa, Tsunenobu Kimoto, Takashi Fuyuki
Publisher	Trans Tech Publications Ltd
Pages	803-806
Number of pages	4
ISBN (Print)	9780878493579
Publication status	Published - Jan 1 2009
Event	12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007 - Otsu, Japan Duration: Oct 14 2007 → Oct 19 2007

Publication series

Name	Materials Science Forum
Volume	600-603
ISSN (Print)	0255-5476
ISSN (Electronic)	1662-9752

Conference

Conference	12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007
Country	Japan
City	Otsu
Period	10/14/07 → 10/19/07

Keywords

Charge injection
Hole trapping
Interface state generation
MOSCAPs
NO annealing

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

Fingerprint Dive into the research topics of 'Impact of nitridation on negative and positive charge buildup in SiC j gate oxides'. Together they form a unique fingerprint.

Cite this

Rozen, J., Dhar, S., Wang, S., Afanas'ev, V. V., Pantelides, S. T., Williams, J. R., & Feldman, L. C. (2009). Impact of nitridation on negative and positive charge buildup in SiC j gate oxides. In A. Suzuki, H. Okumura, K. Fukuda, S. Nishizawa, T. Kimoto, & T. Fuyuki (Eds.), Silicon Carbide and Related Materials 2007 (pp. 803-806). (Materials Science Forum; Vol. 600-603). Trans Tech Publications Ltd.

Impact of nitridation on negative and positive charge buildup in SiC j gate oxides. / Rozen, John; Dhar, Sarit; Wang, Sanwu; Afanas'ev, V. V.; Pantelides, S. T.; Williams, J. R.; Feldman, L. C.

Silicon Carbide and Related Materials 2007. ed. / Akira Suzuki; Hajime Okumura; Kenji Fukuda; Shin-ichi Nishizawa; Tsunenobu Kimoto; Takashi Fuyuki. Trans Tech Publications Ltd, 2009. p. 803-806 (Materials Science Forum; Vol. 600-603).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Rozen, J, Dhar, S, Wang, S, Afanas'ev, VV, Pantelides, ST, Williams, JR & Feldman, LC 2009, Impact of nitridation on negative and positive charge buildup in SiC j gate oxides. in A Suzuki, H Okumura, K Fukuda, S Nishizawa, T Kimoto & T Fuyuki (eds), Silicon Carbide and Related Materials 2007. Materials Science Forum, vol. 600-603, Trans Tech Publications Ltd, pp. 803-806, 12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007, Otsu, Japan, 10/14/07.

Rozen, John ; Dhar, Sarit ; Wang, Sanwu ; Afanas'ev, V. V. ; Pantelides, S. T. ; Williams, J. R. ; Feldman, L. C. / Impact of nitridation on negative and positive charge buildup in SiC j gate oxides. Silicon Carbide and Related Materials 2007. editor / Akira Suzuki ; Hajime Okumura ; Kenji Fukuda ; Shin-ichi Nishizawa ; Tsunenobu Kimoto ; Takashi Fuyuki. Trans Tech Publications Ltd, 2009. pp. 803-806 (Materials Science Forum).

@inproceedings{62602ed2de9d4b01b70bf2805560a3a8,

title = "Impact of nitridation on negative and positive charge buildup in SiC j gate oxides",

abstract = "We report on the effect of nitridation on the negative and positive charge buildup in SiC gate oxides during carrier injection. We observe that the incorporation of nitrogen at the SiO2/SiC interface can enhance the reliability of the interface by suppressing the generation of interface states upon electron injection but that it can also degrade the oxide by creating additional hole traps. We relate these phenomena to the passivation of atomic-level defects by nitrogen.",

keywords = "Charge injection, Hole trapping, Interface state generation, MOSCAPs, NO annealing",

author = "John Rozen and Sarit Dhar and Sanwu Wang and Afanas'ev, {V. V.} and Pantelides, {S. T.} and Williams, {J. R.} and Feldman, {L. C.}",

year = "2009",

month = jan,

day = "1",

language = "English",

isbn = "9780878493579",

series = "Materials Science Forum",

publisher = "Trans Tech Publications Ltd",

pages = "803--806",

editor = "Akira Suzuki and Hajime Okumura and Kenji Fukuda and Shin-ichi Nishizawa and Tsunenobu Kimoto and Takashi Fuyuki",

booktitle = "Silicon Carbide and Related Materials 2007",

note = "12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007 ; Conference date: 14-10-2007 Through 19-10-2007",

}

TY - GEN

T1 - Impact of nitridation on negative and positive charge buildup in SiC j gate oxides

AU - Rozen, John

AU - Dhar, Sarit

AU - Wang, Sanwu

AU - Afanas'ev, V. V.

AU - Pantelides, S. T.

AU - Williams, J. R.

AU - Feldman, L. C.

PY - 2009/1/1

Y1 - 2009/1/1

N2 - We report on the effect of nitridation on the negative and positive charge buildup in SiC gate oxides during carrier injection. We observe that the incorporation of nitrogen at the SiO2/SiC interface can enhance the reliability of the interface by suppressing the generation of interface states upon electron injection but that it can also degrade the oxide by creating additional hole traps. We relate these phenomena to the passivation of atomic-level defects by nitrogen.

AB - We report on the effect of nitridation on the negative and positive charge buildup in SiC gate oxides during carrier injection. We observe that the incorporation of nitrogen at the SiO2/SiC interface can enhance the reliability of the interface by suppressing the generation of interface states upon electron injection but that it can also degrade the oxide by creating additional hole traps. We relate these phenomena to the passivation of atomic-level defects by nitrogen.

KW - Charge injection

KW - Hole trapping

KW - Interface state generation

KW - MOSCAPs

KW - NO annealing

UR - http://www.scopus.com/inward/record.url?scp=63849151525&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=63849151525&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:63849151525

SN - 9780878493579

T3 - Materials Science Forum

SP - 803

EP - 806

BT - Silicon Carbide and Related Materials 2007

A2 - Suzuki, Akira

A2 - Okumura, Hajime

A2 - Fukuda, Kenji

A2 - Nishizawa, Shin-ichi

A2 - Kimoto, Tsunenobu

A2 - Fuyuki, Takashi

PB - Trans Tech Publications Ltd

T2 - 12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007

Y2 - 14 October 2007 through 19 October 2007

ER -