@inproceedings{62602ed2de9d4b01b70bf2805560a3a8,
title = "Impact of nitridation on negative and positive charge buildup in SiC j gate oxides",
abstract = "We report on the effect of nitridation on the negative and positive charge buildup in SiC gate oxides during carrier injection. We observe that the incorporation of nitrogen at the SiO2/SiC interface can enhance the reliability of the interface by suppressing the generation of interface states upon electron injection but that it can also degrade the oxide by creating additional hole traps. We relate these phenomena to the passivation of atomic-level defects by nitrogen.",
keywords = "Charge injection, Hole trapping, Interface state generation, MOSCAPs, NO annealing",
author = "John Rozen and Sarit Dhar and Sanwu Wang and Afanas'ev, {V. V.} and Pantelides, {S. T.} and Williams, {J. R.} and Feldman, {L. C.}",
year = "2009",
month = jan,
day = "1",
language = "English",
isbn = "9780878493579",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "803--806",
editor = "Akira Suzuki and Hajime Okumura and Kenji Fukuda and Shin-ichi Nishizawa and Tsunenobu Kimoto and Takashi Fuyuki",
booktitle = "Silicon Carbide and Related Materials 2007",
note = "12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007 ; Conference date: 14-10-2007 Through 19-10-2007",
}