Impact of nitridation on negative and positive charge buildup in SiC j gate oxides

John Rozen, Sarit Dhar, Sanwu Wang, V. V. Afanas'ev, S. T. Pantelides, J. R. Williams, L. C. Feldman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

We report on the effect of nitridation on the negative and positive charge buildup in SiC gate oxides during carrier injection. We observe that the incorporation of nitrogen at the SiO2/SiC interface can enhance the reliability of the interface by suppressing the generation of interface states upon electron injection but that it can also degrade the oxide by creating additional hole traps. We relate these phenomena to the passivation of atomic-level defects by nitrogen.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2007
EditorsTakashi Fuyuki, Hajime Okumura, Kenji Fukuda, Shin-ichi Nishizawa, Tsunenobu Kimoto, Akira Suzuki
PublisherTrans Tech Publications Ltd
Pages803-806
Number of pages4
ISBN (Print)9780878493579
Publication statusPublished - Jan 1 2009
Event12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007 - Otsu, Japan
Duration: Oct 14 2007Oct 19 2007

Publication series

NameMaterials Science Forum
Volume600-603
ISSN (Print)0255-5476

Conference

Conference12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007
CountryJapan
CityOtsu
Period10/14/0710/19/07

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Keywords

  • Charge injection
  • Hole trapping
  • Interface state generation
  • MOSCAPs
  • NO annealing

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Rozen, J., Dhar, S., Wang, S., Afanas'ev, V. V., Pantelides, S. T., Williams, J. R., & Feldman, L. C. (2009). Impact of nitridation on negative and positive charge buildup in SiC j gate oxides. In T. Fuyuki, H. Okumura, K. Fukuda, S. Nishizawa, T. Kimoto, & A. Suzuki (Eds.), Silicon Carbide and Related Materials 2007 (pp. 803-806). (Materials Science Forum; Vol. 600-603). Trans Tech Publications Ltd.