Abstract
We report on the effect of nitridation on the negative and positive charge buildup in SiC gate oxides during carrier injection. We observe that the incorporation of nitrogen at the SiO2/SiC interface can enhance the reliability of the interface by suppressing the generation of interface states upon electron injection but that it can also degrade the oxide by creating additional hole traps. We relate these phenomena to the passivation of atomic-level defects by nitrogen.
| Original language | English |
|---|---|
| Title of host publication | Silicon Carbide and Related Materials 2007 |
| Editors | Takashi Fuyuki, Hajime Okumura, Kenji Fukuda, Shin-ichi Nishizawa, Tsunenobu Kimoto, Akira Suzuki |
| Publisher | Trans Tech Publications Ltd |
| Pages | 803-806 |
| Number of pages | 4 |
| ISBN (Print) | 9780878493579 |
| Publication status | Published - Jan 1 2009 |
| Event | 12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007 - Otsu, Japan Duration: Oct 14 2007 → Oct 19 2007 |
Publication series
| Name | Materials Science Forum |
|---|---|
| Volume | 600-603 |
| ISSN (Print) | 0255-5476 |
Conference
| Conference | 12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007 |
|---|---|
| Country | Japan |
| City | Otsu |
| Period | 10/14/07 → 10/19/07 |
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Keywords
- Charge injection
- Hole trapping
- Interface state generation
- MOSCAPs
- NO annealing
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Cite this
Rozen, J., Dhar, S., Wang, S., Afanas'ev, V. V., Pantelides, S. T., Williams, J. R., & Feldman, L. C. (2009). Impact of nitridation on negative and positive charge buildup in SiC j gate oxides. In T. Fuyuki, H. Okumura, K. Fukuda, S. Nishizawa, T. Kimoto, & A. Suzuki (Eds.), Silicon Carbide and Related Materials 2007 (pp. 803-806). (Materials Science Forum; Vol. 600-603). Trans Tech Publications Ltd.