Impact of nitridation on negative and positive charge buildup in SiC j gate oxides

John Rozen, Sarit Dhar, Sanwu Wang, V. V. Afanas'ev, S. T. Pantelides, J. R. Williams, Leonard C Feldman

Research output: Contribution to journal › Article

4 Citations (Scopus)

Abstract

We report on the effect of nitridation on the negative and positive charge buildup in SiC gate oxides during carrier injection. We observe that the incorporation of nitrogen at the SiO2/SiC interface can enhance the reliability of the interface by suppressing the generation of interface states upon electron injection but that it can also degrade the oxide by creating additional hole traps. We relate these phenomena to the passivation of atomic-level defects by nitrogen.

Original languageEnglish
Pages (from-to)803-806
Number of pages4
JournalMaterials Science Forum
Volume600-603
DOIs
Publication statusPublished - 2009

Fingerprint

Nitridation
Oxides
Nitrogen
Hole traps
Electron injection
oxides
Interface states
Passivation
nitrogen
carrier injection
electron states
Defects
passivity
traps
injection
defects

Keywords

  • Charge injection
  • Hole trapping
  • Interface state generation
  • MOSCAPs
  • NO annealing

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Rozen, J., Dhar, S., Wang, S., Afanas'ev, V. V., Pantelides, S. T., Williams, J. R., & Feldman, L. C. (2009). Impact of nitridation on negative and positive charge buildup in SiC j gate oxides. Materials Science Forum, 600-603, 803-806. https://doi.org/10.4028/3-908453-11-9

Impact of nitridation on negative and positive charge buildup in SiC j gate oxides. / Rozen, John; Dhar, Sarit; Wang, Sanwu; Afanas'ev, V. V.; Pantelides, S. T.; Williams, J. R.; Feldman, Leonard C.

In: Materials Science Forum, Vol. 600-603, 2009, p. 803-806.

Research output: Contribution to journal › Article

Rozen, J, Dhar, S, Wang, S, Afanas'ev, VV, Pantelides, ST, Williams, JR & Feldman, LC 2009, 'Impact of nitridation on negative and positive charge buildup in SiC j gate oxides', Materials Science Forum, vol. 600-603, pp. 803-806. https://doi.org/10.4028/3-908453-11-9
Rozen J, Dhar S, Wang S, Afanas'ev VV, Pantelides ST, Williams JR et al. Impact of nitridation on negative and positive charge buildup in SiC j gate oxides. Materials Science Forum. 2009;600-603:803-806. https://doi.org/10.4028/3-908453-11-9
Rozen, John ; Dhar, Sarit ; Wang, Sanwu ; Afanas'ev, V. V. ; Pantelides, S. T. ; Williams, J. R. ; Feldman, Leonard C. / Impact of nitridation on negative and positive charge buildup in SiC j gate oxides. In: Materials Science Forum. 2009 ; Vol. 600-603. pp. 803-806.
@article{62602ed2de9d4b01b70bf2805560a3a8,
title = "Impact of nitridation on negative and positive charge buildup in SiC j gate oxides",
abstract = "We report on the effect of nitridation on the negative and positive charge buildup in SiC gate oxides during carrier injection. We observe that the incorporation of nitrogen at the SiO2/SiC interface can enhance the reliability of the interface by suppressing the generation of interface states upon electron injection but that it can also degrade the oxide by creating additional hole traps. We relate these phenomena to the passivation of atomic-level defects by nitrogen.",
keywords = "Charge injection, Hole trapping, Interface state generation, MOSCAPs, NO annealing",
author = "John Rozen and Sarit Dhar and Sanwu Wang and Afanas'ev, {V. V.} and Pantelides, {S. T.} and Williams, {J. R.} and Feldman, {Leonard C}",
year = "2009",
doi = "10.4028/3-908453-11-9",
language = "English",
volume = "600-603",
pages = "803--806",
journal = "Materials Science Forum",
issn = "0255-5476",
publisher = "Trans Tech Publications",

}

TY - JOUR

T1 - Impact of nitridation on negative and positive charge buildup in SiC j gate oxides

AU - Rozen, John

AU - Dhar, Sarit

AU - Wang, Sanwu

AU - Afanas'ev, V. V.

AU - Pantelides, S. T.

AU - Williams, J. R.

AU - Feldman, Leonard C

PY - 2009

Y1 - 2009

N2 - We report on the effect of nitridation on the negative and positive charge buildup in SiC gate oxides during carrier injection. We observe that the incorporation of nitrogen at the SiO2/SiC interface can enhance the reliability of the interface by suppressing the generation of interface states upon electron injection but that it can also degrade the oxide by creating additional hole traps. We relate these phenomena to the passivation of atomic-level defects by nitrogen.

AB - We report on the effect of nitridation on the negative and positive charge buildup in SiC gate oxides during carrier injection. We observe that the incorporation of nitrogen at the SiO2/SiC interface can enhance the reliability of the interface by suppressing the generation of interface states upon electron injection but that it can also degrade the oxide by creating additional hole traps. We relate these phenomena to the passivation of atomic-level defects by nitrogen.

KW - Charge injection

KW - Hole trapping

KW - Interface state generation

KW - MOSCAPs

KW - NO annealing

UR - http://www.scopus.com/inward/record.url?scp=63849151525&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=63849151525&partnerID=8YFLogxK

U2 - 10.4028/3-908453-11-9

DO - 10.4028/3-908453-11-9

M3 - Article

VL - 600-603

SP - 803

EP - 806

JO - Materials Science Forum

JF - Materials Science Forum

SN - 0255-5476

ER -

Access to Document