Abstract
We report on the effect of nitridation on the negative and positive charge buildup in SiC gate oxides during carrier injection. We observe that the incorporation of nitrogen at the SiO2/SiC interface can enhance the reliability of the interface by suppressing the generation of interface states upon electron injection but that it can also degrade the oxide by creating additional hole traps. We relate these phenomena to the passivation of atomic-level defects by nitrogen.
| Original language | English |
|---|---|
| Pages (from-to) | 803-806 |
| Number of pages | 4 |
| Journal | Materials Science Forum |
| Volume | 600-603 |
| DOIs | |
| Publication status | Published - 2009 |
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Keywords
- Charge injection
- Hole trapping
- Interface state generation
- MOSCAPs
- NO annealing
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanical Engineering
- Mechanics of Materials
Cite this
Impact of nitridation on negative and positive charge buildup in SiC j gate oxides. / Rozen, John; Dhar, Sarit; Wang, Sanwu; Afanas'ev, V. V.; Pantelides, S. T.; Williams, J. R.; Feldman, Leonard C.
In: Materials Science Forum, Vol. 600-603, 2009, p. 803-806.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Impact of nitridation on negative and positive charge buildup in SiC j gate oxides
AU - Rozen, John
AU - Dhar, Sarit
AU - Wang, Sanwu
AU - Afanas'ev, V. V.
AU - Pantelides, S. T.
AU - Williams, J. R.
AU - Feldman, Leonard C
PY - 2009
Y1 - 2009
N2 - We report on the effect of nitridation on the negative and positive charge buildup in SiC gate oxides during carrier injection. We observe that the incorporation of nitrogen at the SiO2/SiC interface can enhance the reliability of the interface by suppressing the generation of interface states upon electron injection but that it can also degrade the oxide by creating additional hole traps. We relate these phenomena to the passivation of atomic-level defects by nitrogen.
AB - We report on the effect of nitridation on the negative and positive charge buildup in SiC gate oxides during carrier injection. We observe that the incorporation of nitrogen at the SiO2/SiC interface can enhance the reliability of the interface by suppressing the generation of interface states upon electron injection but that it can also degrade the oxide by creating additional hole traps. We relate these phenomena to the passivation of atomic-level defects by nitrogen.
KW - Charge injection
KW - Hole trapping
KW - Interface state generation
KW - MOSCAPs
KW - NO annealing
UR - http://www.scopus.com/inward/record.url?scp=63849151525&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=63849151525&partnerID=8YFLogxK
U2 - 10.4028/3-908453-11-9
DO - 10.4028/3-908453-11-9
M3 - Article
AN - SCOPUS:63849151525
VL - 600-603
SP - 803
EP - 806
JO - Materials Science Forum
JF - Materials Science Forum
SN - 0255-5476
ER -