Abstract
We studied nitrogen profile engineering to make an ultra-thin silicon nitrided oxide (SiNO) film for 0.25 μm dual-gate CMOS device applications. It was found that high concentration nitrogen atoms piled up near the polysilicon/dielectric interface in the SiNO film can effectively prevent boron diffusion from the p+ gate electrode into the dielectric film, and consequently more than 3 times charge-to-breakdown (Qbd) improvement can be achieved. The SiNO film enables surface channel PMOS and can reduce the minimum gate dielectric thickness by 1.5nm.
| Original language | English |
|---|---|
| Title of host publication | Technical Digest - International Electron Devices Meeting |
| Publisher | IEEE |
| Pages | 327-330 |
| Number of pages | 4 |
| Publication status | Published - 1995 |
| Event | Proceedings of the 1995 International Electron Devices Meeting, IEDM'95 - Washington, DC, USA Duration: Dec 10 1995 → Dec 13 1995 |
Other
| Other | Proceedings of the 1995 International Electron Devices Meeting, IEDM'95 |
|---|---|
| City | Washington, DC, USA |
| Period | 12/10/95 → 12/13/95 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
Impact of nitrogen profile engineering on ultra-thin nitrided oxide films for dual-gate CMOS ULSI. / Hasegawa, E.; Kawata, M.; Ando, K.; Makabe, M.; Kitakata, M.; Ishitani, A.; Manchanda, L.; Green, M. L.; Krisch, K. S.; Feldman, Leonard C.
Technical Digest - International Electron Devices Meeting. IEEE, 1995. p. 327-330.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Impact of nitrogen profile engineering on ultra-thin nitrided oxide films for dual-gate CMOS ULSI
AU - Hasegawa, E.
AU - Kawata, M.
AU - Ando, K.
AU - Makabe, M.
AU - Kitakata, M.
AU - Ishitani, A.
AU - Manchanda, L.
AU - Green, M. L.
AU - Krisch, K. S.
AU - Feldman, Leonard C
PY - 1995
Y1 - 1995
N2 - We studied nitrogen profile engineering to make an ultra-thin silicon nitrided oxide (SiNO) film for 0.25 μm dual-gate CMOS device applications. It was found that high concentration nitrogen atoms piled up near the polysilicon/dielectric interface in the SiNO film can effectively prevent boron diffusion from the p+ gate electrode into the dielectric film, and consequently more than 3 times charge-to-breakdown (Qbd) improvement can be achieved. The SiNO film enables surface channel PMOS and can reduce the minimum gate dielectric thickness by 1.5nm.
AB - We studied nitrogen profile engineering to make an ultra-thin silicon nitrided oxide (SiNO) film for 0.25 μm dual-gate CMOS device applications. It was found that high concentration nitrogen atoms piled up near the polysilicon/dielectric interface in the SiNO film can effectively prevent boron diffusion from the p+ gate electrode into the dielectric film, and consequently more than 3 times charge-to-breakdown (Qbd) improvement can be achieved. The SiNO film enables surface channel PMOS and can reduce the minimum gate dielectric thickness by 1.5nm.
UR - http://www.scopus.com/inward/record.url?scp=20244380605&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=20244380605&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:20244380605
SP - 327
EP - 330
BT - Technical Digest - International Electron Devices Meeting
PB - IEEE
ER -