Abstract
We studied nitrogen profile engineering to make an ultra-thin silicon nitrided oxide (SiNO) film for 0.25 μm dual-gate CMOS device applications. It was found that high concentration nitrogen atoms piled up near the polysilicon/dielectric interface in the SiNO film can effectively prevent boron diffusion from the p+ gate electrode into the dielectric film, and consequently more than 3 times charge-to-breakdown (Qbd) improvement can be achieved. The SiNO film enables surface channel PMOS and can reduce the minimum gate dielectric thickness by 1.5nm.
| Original language | English |
|---|---|
| Pages (from-to) | 327-330 |
| Number of pages | 4 |
| Journal | Technical Digest - International Electron Devices Meeting |
| Publication status | Published - Dec 1 1995 |
| Event | Proceedings of the 1995 International Electron Devices Meeting, IEDM'95 - Washington, DC, USA Duration: Dec 10 1995 → Dec 13 1995 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
Cite this
Hasegawa, E., Kawata, M., Ando, K., Makabe, M., Kitakata, M., Ishitani, A., Manchanda, L., Green, M. L., Krisch, K. S., & Feldman, L. C. (1995). Impact of nitrogen profile engineering on ultra-thin nitrided oxide films for dual-gate CMOS ULSI. Technical Digest - International Electron Devices Meeting, 327-330.