Impact of nitrogen profile engineering on ultra-thin nitrided oxide films for dual-gate CMOS ULSI

E. Hasegawa, M. Kawata, K. Ando, M. Makabe, M. Kitakata, A. Ishitani, L. Manchanda, M. L. Green, K. S. Krisch, Leonard C Feldman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

18 Citations (Scopus)

Abstract

We studied nitrogen profile engineering to make an ultra-thin silicon nitrided oxide (SiNO) film for 0.25 μm dual-gate CMOS device applications. It was found that high concentration nitrogen atoms piled up near the polysilicon/dielectric interface in the SiNO film can effectively prevent boron diffusion from the p+ gate electrode into the dielectric film, and consequently more than 3 times charge-to-breakdown (Qbd) improvement can be achieved. The SiNO film enables surface channel PMOS and can reduce the minimum gate dielectric thickness by 1.5nm.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting
PublisherIEEE
Pages327-330
Number of pages4
Publication statusPublished - 1995
EventProceedings of the 1995 International Electron Devices Meeting, IEDM'95 - Washington, DC, USA
Duration: Dec 10 1995Dec 13 1995

Other

OtherProceedings of the 1995 International Electron Devices Meeting, IEDM'95
CityWashington, DC, USA
Period12/10/9512/13/95

Fingerprint

Silicon oxides
Oxide films
Nitrogen
Thin films
Dielectric films
Gate dielectrics
Polysilicon
Boron
Atoms
Electrodes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Hasegawa, E., Kawata, M., Ando, K., Makabe, M., Kitakata, M., Ishitani, A., ... Feldman, L. C. (1995). Impact of nitrogen profile engineering on ultra-thin nitrided oxide films for dual-gate CMOS ULSI. In Technical Digest - International Electron Devices Meeting (pp. 327-330). IEEE.

Impact of nitrogen profile engineering on ultra-thin nitrided oxide films for dual-gate CMOS ULSI. / Hasegawa, E.; Kawata, M.; Ando, K.; Makabe, M.; Kitakata, M.; Ishitani, A.; Manchanda, L.; Green, M. L.; Krisch, K. S.; Feldman, Leonard C.

Technical Digest - International Electron Devices Meeting. IEEE, 1995. p. 327-330.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hasegawa, E, Kawata, M, Ando, K, Makabe, M, Kitakata, M, Ishitani, A, Manchanda, L, Green, ML, Krisch, KS & Feldman, LC 1995, Impact of nitrogen profile engineering on ultra-thin nitrided oxide films for dual-gate CMOS ULSI. in Technical Digest - International Electron Devices Meeting. IEEE, pp. 327-330, Proceedings of the 1995 International Electron Devices Meeting, IEDM'95, Washington, DC, USA, 12/10/95.
Hasegawa E, Kawata M, Ando K, Makabe M, Kitakata M, Ishitani A et al. Impact of nitrogen profile engineering on ultra-thin nitrided oxide films for dual-gate CMOS ULSI. In Technical Digest - International Electron Devices Meeting. IEEE. 1995. p. 327-330
Hasegawa, E. ; Kawata, M. ; Ando, K. ; Makabe, M. ; Kitakata, M. ; Ishitani, A. ; Manchanda, L. ; Green, M. L. ; Krisch, K. S. ; Feldman, Leonard C. / Impact of nitrogen profile engineering on ultra-thin nitrided oxide films for dual-gate CMOS ULSI. Technical Digest - International Electron Devices Meeting. IEEE, 1995. pp. 327-330
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