Impact of nitrogen profile engineering on ultra-thin nitrided oxide films for dual-gate CMOS ULSI

E. Hasegawa; M. Kawata; K. Ando; M. Makabe; M. Kitakata; A. Ishitani; L. Manchanda; M. L. Green; K. S. Krisch; L. C. Feldman

Impact of nitrogen profile engineering on ultra-thin nitrided oxide films for dual-gate CMOS ULSI

E. Hasegawa, M. Kawata, K. Ando, M. Makabe, M. Kitakata, A. Ishitani, L. Manchanda, M. L. Green, K. S. Krisch, L. C. Feldman

Rutgers University

Research output: Contribution to journal › Conference article › peer-review

18 Citations (Scopus)

Abstract

We studied nitrogen profile engineering to make an ultra-thin silicon nitrided oxide (SiNO) film for 0.25 μm dual-gate CMOS device applications. It was found that high concentration nitrogen atoms piled up near the polysilicon/dielectric interface in the SiNO film can effectively prevent boron diffusion from the p⁺ gate electrode into the dielectric film, and consequently more than 3 times charge-to-breakdown (Q_bd) improvement can be achieved. The SiNO film enables surface channel PMOS and can reduce the minimum gate dielectric thickness by 1.5nm.

Original language	English
Pages (from-to)	327-330
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
Publication status	Published - Dec 1 1995
Event	Proceedings of the 1995 International Electron Devices Meeting, IEDM'95 - Washington, DC, USA Duration: Dec 10 1995 → Dec 13 1995

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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Impact of nitrogen profile engineering on ultra-thin nitrided oxide films for dual-gate CMOS ULSI. / Hasegawa, E.; Kawata, M.; Ando, K.; Makabe, M.; Kitakata, M.; Ishitani, A.; Manchanda, L.; Green, M. L.; Krisch, K. S.; Feldman, L. C.

In: Technical Digest - International Electron Devices Meeting, 01.12.1995, p. 327-330.

Research output: Contribution to journal › Conference article › peer-review

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abstract = "We studied nitrogen profile engineering to make an ultra-thin silicon nitrided oxide (SiNO) film for 0.25 μm dual-gate CMOS device applications. It was found that high concentration nitrogen atoms piled up near the polysilicon/dielectric interface in the SiNO film can effectively prevent boron diffusion from the p+ gate electrode into the dielectric film, and consequently more than 3 times charge-to-breakdown (Qbd) improvement can be achieved. The SiNO film enables surface channel PMOS and can reduce the minimum gate dielectric thickness by 1.5nm.",

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AU - Hasegawa, E.

AU - Kawata, M.

AU - Ando, K.

AU - Makabe, M.

AU - Kitakata, M.

AU - Ishitani, A.

AU - Manchanda, L.

AU - Green, M. L.

AU - Krisch, K. S.

AU - Feldman, L. C.

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AB - We studied nitrogen profile engineering to make an ultra-thin silicon nitrided oxide (SiNO) film for 0.25 μm dual-gate CMOS device applications. It was found that high concentration nitrogen atoms piled up near the polysilicon/dielectric interface in the SiNO film can effectively prevent boron diffusion from the p+ gate electrode into the dielectric film, and consequently more than 3 times charge-to-breakdown (Qbd) improvement can be achieved. The SiNO film enables surface channel PMOS and can reduce the minimum gate dielectric thickness by 1.5nm.

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