Impact of nitrogen profile engineering on ultra-thin nitrided oxide films for dual-gate CMOS ULSI

E. Hasegawa, M. Kawata, K. Ando, M. Makabe, M. Kitakata, A. Ishitani, L. Manchanda, M. L. Green, K. S. Krisch, L. C. Feldman

Research output: Contribution to journalConference article

18 Citations (Scopus)

Abstract

We studied nitrogen profile engineering to make an ultra-thin silicon nitrided oxide (SiNO) film for 0.25 μm dual-gate CMOS device applications. It was found that high concentration nitrogen atoms piled up near the polysilicon/dielectric interface in the SiNO film can effectively prevent boron diffusion from the p+ gate electrode into the dielectric film, and consequently more than 3 times charge-to-breakdown (Qbd) improvement can be achieved. The SiNO film enables surface channel PMOS and can reduce the minimum gate dielectric thickness by 1.5nm.

Original languageEnglish
Pages (from-to)327-330
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - Dec 1 1995
EventProceedings of the 1995 International Electron Devices Meeting, IEDM'95 - Washington, DC, USA
Duration: Dec 10 1995Dec 13 1995

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Hasegawa, E., Kawata, M., Ando, K., Makabe, M., Kitakata, M., Ishitani, A., Manchanda, L., Green, M. L., Krisch, K. S., & Feldman, L. C. (1995). Impact of nitrogen profile engineering on ultra-thin nitrided oxide films for dual-gate CMOS ULSI. Technical Digest - International Electron Devices Meeting, 327-330.