Implantation induced changes in quantum well structures

R. Kalish, Leonard C Feldman, D. C. Jacobson, B. E. Weir, J. L. Merz, L. Y. Kramer, K. Doughty, S. Stone, K. K. Lau

Research output: Contribution to journalArticle

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Abstract

Ion-beam induced intermixing of quantum wells and superlattices is of use in the fabrication of low dimensional structures by spatially restricted ion implantation. The ultimate size of quantum lines or dots is determined by the spatial extent of the intermixing due to individual ion impacts and subsequent annealing. We show by photoluminescence measurements that complete intermixing of implanted and annealed GaAs/GaAlAs interfaces takes place at a very low dose (≈ 1011 cm-2). This enables us to deduce intermixing radii, following annealing, of 20-30 nm for the affected area due to individual ion impacts. These radii are about one order of magnitude larger than the damage track prior to annealing. The exceptionally large radii found in the present work are attributed to defect assisted interdiffusion. The low doses for mixing also support the particle channeling explanation for ion induced mixing at depths in excess of the amorphous range.

Original languageEnglish
Pages (from-to)729-733
Number of pages5
JournalNuclear Inst. and Methods in Physics Research, B
Volume80-81
Issue numberPART 2
DOIs
Publication statusPublished - 1993

Fingerprint

Semiconductor quantum wells
implantation
ion impact
quantum wells
Annealing
Ions
annealing
radii
dosage
Superlattices
Ion implantation
Ion beams
superlattices
ion implantation
Photoluminescence
ion beams
damage
photoluminescence
Fabrication
Defects

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

Kalish, R., Feldman, L. C., Jacobson, D. C., Weir, B. E., Merz, J. L., Kramer, L. Y., ... Lau, K. K. (1993). Implantation induced changes in quantum well structures. Nuclear Inst. and Methods in Physics Research, B, 80-81(PART 2), 729-733. https://doi.org/10.1016/0168-583X(93)90670-2

Implantation induced changes in quantum well structures. / Kalish, R.; Feldman, Leonard C; Jacobson, D. C.; Weir, B. E.; Merz, J. L.; Kramer, L. Y.; Doughty, K.; Stone, S.; Lau, K. K.

In: Nuclear Inst. and Methods in Physics Research, B, Vol. 80-81, No. PART 2, 1993, p. 729-733.

Research output: Contribution to journalArticle

Kalish, R, Feldman, LC, Jacobson, DC, Weir, BE, Merz, JL, Kramer, LY, Doughty, K, Stone, S & Lau, KK 1993, 'Implantation induced changes in quantum well structures', Nuclear Inst. and Methods in Physics Research, B, vol. 80-81, no. PART 2, pp. 729-733. https://doi.org/10.1016/0168-583X(93)90670-2
Kalish, R. ; Feldman, Leonard C ; Jacobson, D. C. ; Weir, B. E. ; Merz, J. L. ; Kramer, L. Y. ; Doughty, K. ; Stone, S. ; Lau, K. K. / Implantation induced changes in quantum well structures. In: Nuclear Inst. and Methods in Physics Research, B. 1993 ; Vol. 80-81, No. PART 2. pp. 729-733.
@article{600fb94473834e6599fe6f24c38601df,
title = "Implantation induced changes in quantum well structures",
abstract = "Ion-beam induced intermixing of quantum wells and superlattices is of use in the fabrication of low dimensional structures by spatially restricted ion implantation. The ultimate size of quantum lines or dots is determined by the spatial extent of the intermixing due to individual ion impacts and subsequent annealing. We show by photoluminescence measurements that complete intermixing of implanted and annealed GaAs/GaAlAs interfaces takes place at a very low dose (≈ 1011 cm-2). This enables us to deduce intermixing radii, following annealing, of 20-30 nm for the affected area due to individual ion impacts. These radii are about one order of magnitude larger than the damage track prior to annealing. The exceptionally large radii found in the present work are attributed to defect assisted interdiffusion. The low doses for mixing also support the particle channeling explanation for ion induced mixing at depths in excess of the amorphous range.",
author = "R. Kalish and Feldman, {Leonard C} and Jacobson, {D. C.} and Weir, {B. E.} and Merz, {J. L.} and Kramer, {L. Y.} and K. Doughty and S. Stone and Lau, {K. K.}",
year = "1993",
doi = "10.1016/0168-583X(93)90670-2",
language = "English",
volume = "80-81",
pages = "729--733",
journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",
issn = "0168-583X",
publisher = "Elsevier",
number = "PART 2",

}

TY - JOUR

T1 - Implantation induced changes in quantum well structures

AU - Kalish, R.

AU - Feldman, Leonard C

AU - Jacobson, D. C.

AU - Weir, B. E.

AU - Merz, J. L.

AU - Kramer, L. Y.

AU - Doughty, K.

AU - Stone, S.

AU - Lau, K. K.

PY - 1993

Y1 - 1993

N2 - Ion-beam induced intermixing of quantum wells and superlattices is of use in the fabrication of low dimensional structures by spatially restricted ion implantation. The ultimate size of quantum lines or dots is determined by the spatial extent of the intermixing due to individual ion impacts and subsequent annealing. We show by photoluminescence measurements that complete intermixing of implanted and annealed GaAs/GaAlAs interfaces takes place at a very low dose (≈ 1011 cm-2). This enables us to deduce intermixing radii, following annealing, of 20-30 nm for the affected area due to individual ion impacts. These radii are about one order of magnitude larger than the damage track prior to annealing. The exceptionally large radii found in the present work are attributed to defect assisted interdiffusion. The low doses for mixing also support the particle channeling explanation for ion induced mixing at depths in excess of the amorphous range.

AB - Ion-beam induced intermixing of quantum wells and superlattices is of use in the fabrication of low dimensional structures by spatially restricted ion implantation. The ultimate size of quantum lines or dots is determined by the spatial extent of the intermixing due to individual ion impacts and subsequent annealing. We show by photoluminescence measurements that complete intermixing of implanted and annealed GaAs/GaAlAs interfaces takes place at a very low dose (≈ 1011 cm-2). This enables us to deduce intermixing radii, following annealing, of 20-30 nm for the affected area due to individual ion impacts. These radii are about one order of magnitude larger than the damage track prior to annealing. The exceptionally large radii found in the present work are attributed to defect assisted interdiffusion. The low doses for mixing also support the particle channeling explanation for ion induced mixing at depths in excess of the amorphous range.

UR - http://www.scopus.com/inward/record.url?scp=0642300839&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0642300839&partnerID=8YFLogxK

U2 - 10.1016/0168-583X(93)90670-2

DO - 10.1016/0168-583X(93)90670-2

M3 - Article

VL - 80-81

SP - 729

EP - 733

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

IS - PART 2

ER -