Abstract
Ion-beam induced intermixing of quantum wells and superlattices is of use in the fabrication of low dimensional structures by spatially restricted ion implantation. The ultimate size of quantum lines or dots is determined by the spatial extent of the intermixing due to individual ion impacts and subsequent annealing. We show by photoluminescence measurements that complete intermixing of implanted and annealed GaAs/GaAlAs interfaces takes place at a very low dose (≈ 1011 cm-2). This enables us to deduce intermixing radii, following annealing, of 20-30 nm for the affected area due to individual ion impacts. These radii are about one order of magnitude larger than the damage track prior to annealing. The exceptionally large radii found in the present work are attributed to defect assisted interdiffusion. The low doses for mixing also support the particle channeling explanation for ion induced mixing at depths in excess of the amorphous range.
| Original language | English |
|---|---|
| Pages (from-to) | 729-733 |
| Number of pages | 5 |
| Journal | Nuclear Inst. and Methods in Physics Research, B |
| Volume | 80-81 |
| Issue number | PART 2 |
| DOIs | |
| Publication status | Published - 1993 |
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ASJC Scopus subject areas
- Surfaces, Coatings and Films
- Instrumentation
- Surfaces and Interfaces
Cite this
Implantation induced changes in quantum well structures. / Kalish, R.; Feldman, Leonard C; Jacobson, D. C.; Weir, B. E.; Merz, J. L.; Kramer, L. Y.; Doughty, K.; Stone, S.; Lau, K. K.
In: Nuclear Inst. and Methods in Physics Research, B, Vol. 80-81, No. PART 2, 1993, p. 729-733.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Implantation induced changes in quantum well structures
AU - Kalish, R.
AU - Feldman, Leonard C
AU - Jacobson, D. C.
AU - Weir, B. E.
AU - Merz, J. L.
AU - Kramer, L. Y.
AU - Doughty, K.
AU - Stone, S.
AU - Lau, K. K.
PY - 1993
Y1 - 1993
N2 - Ion-beam induced intermixing of quantum wells and superlattices is of use in the fabrication of low dimensional structures by spatially restricted ion implantation. The ultimate size of quantum lines or dots is determined by the spatial extent of the intermixing due to individual ion impacts and subsequent annealing. We show by photoluminescence measurements that complete intermixing of implanted and annealed GaAs/GaAlAs interfaces takes place at a very low dose (≈ 1011 cm-2). This enables us to deduce intermixing radii, following annealing, of 20-30 nm for the affected area due to individual ion impacts. These radii are about one order of magnitude larger than the damage track prior to annealing. The exceptionally large radii found in the present work are attributed to defect assisted interdiffusion. The low doses for mixing also support the particle channeling explanation for ion induced mixing at depths in excess of the amorphous range.
AB - Ion-beam induced intermixing of quantum wells and superlattices is of use in the fabrication of low dimensional structures by spatially restricted ion implantation. The ultimate size of quantum lines or dots is determined by the spatial extent of the intermixing due to individual ion impacts and subsequent annealing. We show by photoluminescence measurements that complete intermixing of implanted and annealed GaAs/GaAlAs interfaces takes place at a very low dose (≈ 1011 cm-2). This enables us to deduce intermixing radii, following annealing, of 20-30 nm for the affected area due to individual ion impacts. These radii are about one order of magnitude larger than the damage track prior to annealing. The exceptionally large radii found in the present work are attributed to defect assisted interdiffusion. The low doses for mixing also support the particle channeling explanation for ion induced mixing at depths in excess of the amorphous range.
UR - http://www.scopus.com/inward/record.url?scp=0642300839&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0642300839&partnerID=8YFLogxK
U2 - 10.1016/0168-583X(93)90670-2
DO - 10.1016/0168-583X(93)90670-2
M3 - Article
AN - SCOPUS:0642300839
VL - 80-81
SP - 729
EP - 733
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
SN - 0168-583X
IS - PART 2
ER -