Improved film growth and flatband voltage control of ALD HFO2 and HF-AL-O with n+ poly-Si gates using chemical oxides and optimized post-annealing

G. D. Wilk, M. L. Green, M. Y. Ho, B. W. Busch, T. W. Sorsch, F. P. Klemens, B. Brijs, R. B. Van Dover, A. Kornblit, T. Gustafsson, Eric Garfunkel, S. Hillenius, D. Monroe, P. Kalavade, J. M. Hergenrother

Research output: Chapter in Book/Report/Conference proceedingConference contribution

72 Citations (Scopus)

Abstract

We demonstrate for the first time that chemical oxide underlayers ∼5Å thick provide improved growth and flatband voltage control of ALD HfO2 films compared to thermal oxides. Optimized annealing conditions are shown to greatly reduce both fixed charge and interfacial oxide growth in the high-k stacks. Extremely small flatband voltage shifts of <30 mV are achieved, corresponding to a very low fixed charge of Qf∼2E11 /cm2.

Original languageEnglish
Title of host publicationIEEE Symposium on VLSI Circuits, Digest of Technical Papers
Pages88-89
Number of pages2
Publication statusPublished - 2002
Event2002 Symposium on VLSI Technology Digest of Technical Papers - Honolulu, HI, United States
Duration: Jun 11 2002Jun 13 2002

Other

Other2002 Symposium on VLSI Technology Digest of Technical Papers
CountryUnited States
CityHonolulu, HI
Period6/11/026/13/02

ASJC Scopus subject areas

  • Engineering(all)

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