Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

G. Y. Chung, C. C. Tin, J. R. Williams, K. McDonald, R. K. Chanana, Robert A. Weller, S. T. Pantelides, Leonard C Feldman, O. W. Holland, M. K. Das, John W. Palmour

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Abstract

Results presented in this letter demonstrate that the effective channel mobility of lateral, inversion-mode 4H-SiC MOS-FETs is increased significantly after passivation of SiC/SiO2 interface states near the conduction band edge by high temperature anneals in nitric oxide. Hi-lo capacitance-voltage (C-V) and ac conductance measurements indicate that, at 0.1 eV below the conduction band edge, the interface trap density decreases from approximately 2 × 1013 to 2 × 1012 eV-1 cm-2 following anneals in nitric oxide at 1175 °C for 2 h. The effective channel mobility for MOSFETs fabricated with either wet or dry oxides increases by an order of magnitude to approximately 30-35 cm2/ V-s following the passivation anneals.

Original languageEnglish
Pages (from-to)176-178
Number of pages3
JournalIEEE Electron Device Letters
Volume22
Issue number4
DOIs
Publication statusPublished - Apr 2001

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Keywords

  • Interface states
  • Mobility
  • MOSFETs
  • Nitridation
  • Oxidation
  • Silicon carbide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Chung, G. Y., Tin, C. C., Williams, J. R., McDonald, K., Chanana, R. K., Weller, R. A., ... Palmour, J. W. (2001). Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide. IEEE Electron Device Letters, 22(4), 176-178. https://doi.org/10.1109/55.915604