Abstract
Results presented in this letter demonstrate that the effective channel mobility of lateral, inversion-mode 4H-SiC MOS-FETs is increased significantly after passivation of SiC/SiO2 interface states near the conduction band edge by high temperature anneals in nitric oxide. Hi-lo capacitance-voltage (C-V) and ac conductance measurements indicate that, at 0.1 eV below the conduction band edge, the interface trap density decreases from approximately 2 × 1013 to 2 × 1012 eV-1 cm-2 following anneals in nitric oxide at 1175 °C for 2 h. The effective channel mobility for MOSFETs fabricated with either wet or dry oxides increases by an order of magnitude to approximately 30-35 cm2/ V-s following the passivation anneals.
| Original language | English |
|---|---|
| Pages (from-to) | 176-178 |
| Number of pages | 3 |
| Journal | IEEE Electron Device Letters |
| Volume | 22 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - Apr 2001 |
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Keywords
- Interface states
- Mobility
- MOSFETs
- Nitridation
- Oxidation
- Silicon carbide
ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide. / Chung, G. Y.; Tin, C. C.; Williams, J. R.; McDonald, K.; Chanana, R. K.; Weller, Robert A.; Pantelides, S. T.; Feldman, Leonard C; Holland, O. W.; Das, M. K.; Palmour, John W.
In: IEEE Electron Device Letters, Vol. 22, No. 4, 04.2001, p. 176-178.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide
AU - Chung, G. Y.
AU - Tin, C. C.
AU - Williams, J. R.
AU - McDonald, K.
AU - Chanana, R. K.
AU - Weller, Robert A.
AU - Pantelides, S. T.
AU - Feldman, Leonard C
AU - Holland, O. W.
AU - Das, M. K.
AU - Palmour, John W.
PY - 2001/4
Y1 - 2001/4
N2 - Results presented in this letter demonstrate that the effective channel mobility of lateral, inversion-mode 4H-SiC MOS-FETs is increased significantly after passivation of SiC/SiO2 interface states near the conduction band edge by high temperature anneals in nitric oxide. Hi-lo capacitance-voltage (C-V) and ac conductance measurements indicate that, at 0.1 eV below the conduction band edge, the interface trap density decreases from approximately 2 × 1013 to 2 × 1012 eV-1 cm-2 following anneals in nitric oxide at 1175 °C for 2 h. The effective channel mobility for MOSFETs fabricated with either wet or dry oxides increases by an order of magnitude to approximately 30-35 cm2/ V-s following the passivation anneals.
AB - Results presented in this letter demonstrate that the effective channel mobility of lateral, inversion-mode 4H-SiC MOS-FETs is increased significantly after passivation of SiC/SiO2 interface states near the conduction band edge by high temperature anneals in nitric oxide. Hi-lo capacitance-voltage (C-V) and ac conductance measurements indicate that, at 0.1 eV below the conduction band edge, the interface trap density decreases from approximately 2 × 1013 to 2 × 1012 eV-1 cm-2 following anneals in nitric oxide at 1175 °C for 2 h. The effective channel mobility for MOSFETs fabricated with either wet or dry oxides increases by an order of magnitude to approximately 30-35 cm2/ V-s following the passivation anneals.
KW - Interface states
KW - Mobility
KW - MOSFETs
KW - Nitridation
KW - Oxidation
KW - Silicon carbide
UR - http://www.scopus.com/inward/record.url?scp=0035310635&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0035310635&partnerID=8YFLogxK
U2 - 10.1109/55.915604
DO - 10.1109/55.915604
M3 - Article
AN - SCOPUS:0035310635
VL - 22
SP - 176
EP - 178
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 4
ER -