Abstract
Results presented in this letter demonstrate that the effective channel mobility of lateral, inversion-mode 4H-SiC MOS-FETs is increased significantly after passivation of SiC/SiO2 interface states near the conduction band edge by high temperature anneals in nitric oxide. Hi-lo capacitance-voltage (C-V) and ac conductance measurements indicate that, at 0.1 eV below the conduction band edge, the interface trap density decreases from approximately 2 × 1013 to 2 × 1012 eV-1 cm-2 following anneals in nitric oxide at 1175 °C for 2 h. The effective channel mobility for MOSFETs fabricated with either wet or dry oxides increases by an order of magnitude to approximately 30-35 cm2/ V-s following the passivation anneals.
Original language | English |
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Pages (from-to) | 176-178 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 22 |
Issue number | 4 |
DOIs | |
Publication status | Published - Apr 2001 |
Keywords
- Interface states
- MOSFETs
- Mobility
- Nitridation
- Oxidation
- Silicon carbide
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering