Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

G. Y. Chung; C. C. Tin; J. R. Williams; K. McDonald; R. K. Chanana; Robert A. Weller; S. T. Pantelides; Leonard C. Feldman; O. W. Holland; M. K. Das; John W. Palmour

doi:10.1109/55.915604

Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

G. Y. Chung, C. C. Tin, J. R. Williams, K. McDonald, R. K. Chanana, Robert A. Weller, S. T. Pantelides, Leonard C. Feldman, O. W. Holland, M. K. Das, John W. Palmour

Rutgers University

Research output: Contribution to journal › Article › peer-review

482 Citations (Scopus)

Abstract

Results presented in this letter demonstrate that the effective channel mobility of lateral, inversion-mode 4H-SiC MOS-FETs is increased significantly after passivation of SiC/SiO₂ interface states near the conduction band edge by high temperature anneals in nitric oxide. Hi-lo capacitance-voltage (C-V) and ac conductance measurements indicate that, at 0.1 eV below the conduction band edge, the interface trap density decreases from approximately 2 × 10¹³ to 2 × 10¹² eV^-1 cm^-2 following anneals in nitric oxide at 1175 °C for 2 h. The effective channel mobility for MOSFETs fabricated with either wet or dry oxides increases by an order of magnitude to approximately 30-35 cm²/ V-s following the passivation anneals.

Original language	English
Pages (from-to)	176-178
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	22
Issue number	4
DOIs	https://doi.org/10.1109/55.915604
Publication status	Published - Apr 2001

Keywords

Interface states
MOSFETs
Mobility
Nitridation
Oxidation
Silicon carbide

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide. / Chung, G. Y.; Tin, C. C.; Williams, J. R.; McDonald, K.; Chanana, R. K.; Weller, Robert A.; Pantelides, S. T.; Feldman, Leonard C.; Holland, O. W.; Das, M. K.; Palmour, John W.

In: IEEE Electron Device Letters, Vol. 22, No. 4, 04.2001, p. 176-178.

Research output: Contribution to journal › Article › peer-review

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title = "Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide",

abstract = "Results presented in this letter demonstrate that the effective channel mobility of lateral, inversion-mode 4H-SiC MOS-FETs is increased significantly after passivation of SiC/SiO2 interface states near the conduction band edge by high temperature anneals in nitric oxide. Hi-lo capacitance-voltage (C-V) and ac conductance measurements indicate that, at 0.1 eV below the conduction band edge, the interface trap density decreases from approximately 2 × 1013 to 2 × 1012 eV-1 cm-2 following anneals in nitric oxide at 1175 °C for 2 h. The effective channel mobility for MOSFETs fabricated with either wet or dry oxides increases by an order of magnitude to approximately 30-35 cm2/ V-s following the passivation anneals.",

keywords = "Interface states, MOSFETs, Mobility, Nitridation, Oxidation, Silicon carbide",

author = "Chung, {G. Y.} and Tin, {C. C.} and Williams, {J. R.} and K. McDonald and Chanana, {R. K.} and Weller, {Robert A.} and Pantelides, {S. T.} and Feldman, {Leonard C.} and Holland, {O. W.} and Das, {M. K.} and Palmour, {John W.}",

note = "Funding Information: Manuscript received November 17, 2000; revised December 27, 2000. This work was supported by DARPA Contract MDA972 98-1-0007 and EPRI Contract W0806905. Research at Oak Ridge National Laboratory sponsored by the Division of Material Sciences, U.S. Department of Energy, under Contract DE-AC05-00OR22725 with UT-Battelle, LLC. The review of this letter was arranged by Editor T.-J. King.",

year = "2001",

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T1 - Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

AU - Chung, G. Y.

AU - Tin, C. C.

AU - Williams, J. R.

AU - McDonald, K.

AU - Chanana, R. K.

AU - Weller, Robert A.

AU - Pantelides, S. T.

AU - Feldman, Leonard C.

AU - Holland, O. W.

AU - Das, M. K.

AU - Palmour, John W.

N1 - Funding Information: Manuscript received November 17, 2000; revised December 27, 2000. This work was supported by DARPA Contract MDA972 98-1-0007 and EPRI Contract W0806905. Research at Oak Ridge National Laboratory sponsored by the Division of Material Sciences, U.S. Department of Energy, under Contract DE-AC05-00OR22725 with UT-Battelle, LLC. The review of this letter was arranged by Editor T.-J. King.

PY - 2001/4

Y1 - 2001/4

N2 - Results presented in this letter demonstrate that the effective channel mobility of lateral, inversion-mode 4H-SiC MOS-FETs is increased significantly after passivation of SiC/SiO2 interface states near the conduction band edge by high temperature anneals in nitric oxide. Hi-lo capacitance-voltage (C-V) and ac conductance measurements indicate that, at 0.1 eV below the conduction band edge, the interface trap density decreases from approximately 2 × 1013 to 2 × 1012 eV-1 cm-2 following anneals in nitric oxide at 1175 °C for 2 h. The effective channel mobility for MOSFETs fabricated with either wet or dry oxides increases by an order of magnitude to approximately 30-35 cm2/ V-s following the passivation anneals.

AB - Results presented in this letter demonstrate that the effective channel mobility of lateral, inversion-mode 4H-SiC MOS-FETs is increased significantly after passivation of SiC/SiO2 interface states near the conduction band edge by high temperature anneals in nitric oxide. Hi-lo capacitance-voltage (C-V) and ac conductance measurements indicate that, at 0.1 eV below the conduction band edge, the interface trap density decreases from approximately 2 × 1013 to 2 × 1012 eV-1 cm-2 following anneals in nitric oxide at 1175 °C for 2 h. The effective channel mobility for MOSFETs fabricated with either wet or dry oxides increases by an order of magnitude to approximately 30-35 cm2/ V-s following the passivation anneals.

KW - Interface states

KW - MOSFETs

KW - Mobility

KW - Nitridation

KW - Oxidation

KW - Silicon carbide

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