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Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide
G. Y. Chung, C. C. Tin, J. R. Williams, K. McDonald, R. K. Chanana, Robert A. Weller, S. T. Pantelides, Leonard C. Feldman, O. W. Holland, M. K. Das, John W. Palmour
Research output: Contribution to journal › Article › peer-review
489
Citations
(Scopus)