Improvement in the thermoelectric properties of pressure-tuned β-K2Bi8Se13

J. F. Meng, N. V Chandra Shekar, D. Y. Chung, Mercouri G Kanatzidis, J. V. Badding

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

A report on the thermoelectric properties of the semiconductor β-K2Bi8Se13, analyzed under pressure, was presented. X-ray diffraction technique was used to study the structural change upon compression. The peak in the thermoelectric power was found suggestive of an electronic topological transition upon compression.

Original languageEnglish
Pages (from-to)4485-4488
Number of pages4
JournalJournal of Applied Physics
Volume94
Issue number7
DOIs
Publication statusPublished - Oct 1 2003

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electronics
diffraction
x rays

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Improvement in the thermoelectric properties of pressure-tuned β-K2Bi8Se13. / Meng, J. F.; Shekar, N. V Chandra; Chung, D. Y.; Kanatzidis, Mercouri G; Badding, J. V.

In: Journal of Applied Physics, Vol. 94, No. 7, 01.10.2003, p. 4485-4488.

Research output: Contribution to journalArticle

Meng, J. F. ; Shekar, N. V Chandra ; Chung, D. Y. ; Kanatzidis, Mercouri G ; Badding, J. V. / Improvement in the thermoelectric properties of pressure-tuned β-K2Bi8Se13. In: Journal of Applied Physics. 2003 ; Vol. 94, No. 7. pp. 4485-4488.
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