Improving the performance of quantum dot light-emitting diodes through nanoscale engineering

Jeffrey M. Pietryga, Wan Ki Baea, Young Shin Parka, Istvan Robel, Victor I Klimov

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Despite tremendous progress since the first demonstration of QDbased light-emitting diodes (QD-LEDs) there is substantial room for improvement in performance, particularly at high current densities. Here we analyze the role of Auger recombination in the performance of QD-LEDs by conducting a systematic characterization of device performance in conjunction with timeresolved spectroscopic studies of photoexcited carriers directly within the device structure. We use a series of structurally engineered core/shell QDs that exhibit very similar single-exciton properties, but distinctly different rates of non-radiative Auger recombination to show that both QD-LED efficiency and the onset for efficiency roll-off are strongly influenced by Auger recombination. Finally, we demonstrate that device efficiency can be improved by either reducing Auger recombination rates, or by improving charge-injection balance, both of which can be accomplished through engineering of the QD structure.

Original languageEnglish
Title of host publicationECS Transactions
PublisherElectrochemical Society Inc.
Pages75-85
Number of pages11
Volume61
Edition5
DOIs
Publication statusPublished - 2014
EventInternational Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 4 - 225th ECS Meeting - Orlando, United States
Duration: May 11 2014May 15 2014

Other

OtherInternational Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 4 - 225th ECS Meeting
CountryUnited States
CityOrlando
Period5/11/145/15/14

Fingerprint

Semiconductor quantum dots
Light emitting diodes
Charge injection
Excitons
Current density
Demonstrations

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Pietryga, J. M., Baea, W. K., Parka, Y. S., Robel, I., & Klimov, V. I. (2014). Improving the performance of quantum dot light-emitting diodes through nanoscale engineering. In ECS Transactions (5 ed., Vol. 61, pp. 75-85). Electrochemical Society Inc.. https://doi.org/10.1149/06105.0075ecst

Improving the performance of quantum dot light-emitting diodes through nanoscale engineering. / Pietryga, Jeffrey M.; Baea, Wan Ki; Parka, Young Shin; Robel, Istvan; Klimov, Victor I.

ECS Transactions. Vol. 61 5. ed. Electrochemical Society Inc., 2014. p. 75-85.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Pietryga, JM, Baea, WK, Parka, YS, Robel, I & Klimov, VI 2014, Improving the performance of quantum dot light-emitting diodes through nanoscale engineering. in ECS Transactions. 5 edn, vol. 61, Electrochemical Society Inc., pp. 75-85, International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 4 - 225th ECS Meeting, Orlando, United States, 5/11/14. https://doi.org/10.1149/06105.0075ecst
Pietryga JM, Baea WK, Parka YS, Robel I, Klimov VI. Improving the performance of quantum dot light-emitting diodes through nanoscale engineering. In ECS Transactions. 5 ed. Vol. 61. Electrochemical Society Inc. 2014. p. 75-85 https://doi.org/10.1149/06105.0075ecst
Pietryga, Jeffrey M. ; Baea, Wan Ki ; Parka, Young Shin ; Robel, Istvan ; Klimov, Victor I. / Improving the performance of quantum dot light-emitting diodes through nanoscale engineering. ECS Transactions. Vol. 61 5. ed. Electrochemical Society Inc., 2014. pp. 75-85
@inproceedings{cd8aea94fae84b50b54de5886503b91e,
title = "Improving the performance of quantum dot light-emitting diodes through nanoscale engineering",
abstract = "Despite tremendous progress since the first demonstration of QDbased light-emitting diodes (QD-LEDs) there is substantial room for improvement in performance, particularly at high current densities. Here we analyze the role of Auger recombination in the performance of QD-LEDs by conducting a systematic characterization of device performance in conjunction with timeresolved spectroscopic studies of photoexcited carriers directly within the device structure. We use a series of structurally engineered core/shell QDs that exhibit very similar single-exciton properties, but distinctly different rates of non-radiative Auger recombination to show that both QD-LED efficiency and the onset for efficiency roll-off are strongly influenced by Auger recombination. Finally, we demonstrate that device efficiency can be improved by either reducing Auger recombination rates, or by improving charge-injection balance, both of which can be accomplished through engineering of the QD structure.",
author = "Pietryga, {Jeffrey M.} and Baea, {Wan Ki} and Parka, {Young Shin} and Istvan Robel and Klimov, {Victor I}",
year = "2014",
doi = "10.1149/06105.0075ecst",
language = "English",
volume = "61",
pages = "75--85",
booktitle = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
edition = "5",

}

TY - GEN

T1 - Improving the performance of quantum dot light-emitting diodes through nanoscale engineering

AU - Pietryga, Jeffrey M.

AU - Baea, Wan Ki

AU - Parka, Young Shin

AU - Robel, Istvan

AU - Klimov, Victor I

PY - 2014

Y1 - 2014

N2 - Despite tremendous progress since the first demonstration of QDbased light-emitting diodes (QD-LEDs) there is substantial room for improvement in performance, particularly at high current densities. Here we analyze the role of Auger recombination in the performance of QD-LEDs by conducting a systematic characterization of device performance in conjunction with timeresolved spectroscopic studies of photoexcited carriers directly within the device structure. We use a series of structurally engineered core/shell QDs that exhibit very similar single-exciton properties, but distinctly different rates of non-radiative Auger recombination to show that both QD-LED efficiency and the onset for efficiency roll-off are strongly influenced by Auger recombination. Finally, we demonstrate that device efficiency can be improved by either reducing Auger recombination rates, or by improving charge-injection balance, both of which can be accomplished through engineering of the QD structure.

AB - Despite tremendous progress since the first demonstration of QDbased light-emitting diodes (QD-LEDs) there is substantial room for improvement in performance, particularly at high current densities. Here we analyze the role of Auger recombination in the performance of QD-LEDs by conducting a systematic characterization of device performance in conjunction with timeresolved spectroscopic studies of photoexcited carriers directly within the device structure. We use a series of structurally engineered core/shell QDs that exhibit very similar single-exciton properties, but distinctly different rates of non-radiative Auger recombination to show that both QD-LED efficiency and the onset for efficiency roll-off are strongly influenced by Auger recombination. Finally, we demonstrate that device efficiency can be improved by either reducing Auger recombination rates, or by improving charge-injection balance, both of which can be accomplished through engineering of the QD structure.

UR - http://www.scopus.com/inward/record.url?scp=84925081666&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84925081666&partnerID=8YFLogxK

U2 - 10.1149/06105.0075ecst

DO - 10.1149/06105.0075ecst

M3 - Conference contribution

VL - 61

SP - 75

EP - 85

BT - ECS Transactions

PB - Electrochemical Society Inc.

ER -