Improving the performance of quantum dot light-emitting diodes through nanoscale engineering

Jeffrey M. Pietryga, Wan Ki Baea, Young Shin Parka, Istvan Robel, Victor I. Klimov

Research output: Contribution to journalConference articlepeer-review


Despite tremendous progress since the first demonstration of QDbased light-emitting diodes (QD-LEDs) there is substantial room for improvement in performance, particularly at high current densities. Here we analyze the role of Auger recombination in the performance of QD-LEDs by conducting a systematic characterization of device performance in conjunction with timeresolved spectroscopic studies of photoexcited carriers directly within the device structure. We use a series of structurally engineered core/shell QDs that exhibit very similar single-exciton properties, but distinctly different rates of non-radiative Auger recombination to show that both QD-LED efficiency and the onset for efficiency roll-off are strongly influenced by Auger recombination. Finally, we demonstrate that device efficiency can be improved by either reducing Auger recombination rates, or by improving charge-injection balance, both of which can be accomplished through engineering of the QD structure.

Original languageEnglish
Pages (from-to)75-85
Number of pages11
JournalECS Transactions
Issue number5
Publication statusPublished - Jan 1 2014
EventInternational Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 4 - 225th ECS Meeting - Orlando, United States
Duration: May 11 2014May 15 2014

ASJC Scopus subject areas

  • Engineering(all)

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