Abstract
Despite tremendous progress since the first demonstration of QDbased light-emitting diodes (QD-LEDs) there is substantial room for improvement in performance, particularly at high current densities. Here we analyze the role of Auger recombination in the performance of QD-LEDs by conducting a systematic characterization of device performance in conjunction with timeresolved spectroscopic studies of photoexcited carriers directly within the device structure. We use a series of structurally engineered core/shell QDs that exhibit very similar single-exciton properties, but distinctly different rates of non-radiative Auger recombination to show that both QD-LED efficiency and the onset for efficiency roll-off are strongly influenced by Auger recombination. Finally, we demonstrate that device efficiency can be improved by either reducing Auger recombination rates, or by improving charge-injection balance, both of which can be accomplished through engineering of the QD structure.
| Original language | English |
|---|---|
| Title of host publication | ECS Transactions |
| Publisher | Electrochemical Society Inc. |
| Pages | 75-85 |
| Number of pages | 11 |
| Volume | 61 |
| Edition | 5 |
| DOIs | |
| Publication status | Published - 2014 |
| Event | International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 4 - 225th ECS Meeting - Orlando, United States Duration: May 11 2014 → May 15 2014 |
Other
| Other | International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 4 - 225th ECS Meeting |
|---|---|
| Country | United States |
| City | Orlando |
| Period | 5/11/14 → 5/15/14 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
Improving the performance of quantum dot light-emitting diodes through nanoscale engineering. / Pietryga, Jeffrey M.; Baea, Wan Ki; Parka, Young Shin; Robel, Istvan; Klimov, Victor I.
ECS Transactions. Vol. 61 5. ed. Electrochemical Society Inc., 2014. p. 75-85.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Improving the performance of quantum dot light-emitting diodes through nanoscale engineering
AU - Pietryga, Jeffrey M.
AU - Baea, Wan Ki
AU - Parka, Young Shin
AU - Robel, Istvan
AU - Klimov, Victor I
PY - 2014
Y1 - 2014
N2 - Despite tremendous progress since the first demonstration of QDbased light-emitting diodes (QD-LEDs) there is substantial room for improvement in performance, particularly at high current densities. Here we analyze the role of Auger recombination in the performance of QD-LEDs by conducting a systematic characterization of device performance in conjunction with timeresolved spectroscopic studies of photoexcited carriers directly within the device structure. We use a series of structurally engineered core/shell QDs that exhibit very similar single-exciton properties, but distinctly different rates of non-radiative Auger recombination to show that both QD-LED efficiency and the onset for efficiency roll-off are strongly influenced by Auger recombination. Finally, we demonstrate that device efficiency can be improved by either reducing Auger recombination rates, or by improving charge-injection balance, both of which can be accomplished through engineering of the QD structure.
AB - Despite tremendous progress since the first demonstration of QDbased light-emitting diodes (QD-LEDs) there is substantial room for improvement in performance, particularly at high current densities. Here we analyze the role of Auger recombination in the performance of QD-LEDs by conducting a systematic characterization of device performance in conjunction with timeresolved spectroscopic studies of photoexcited carriers directly within the device structure. We use a series of structurally engineered core/shell QDs that exhibit very similar single-exciton properties, but distinctly different rates of non-radiative Auger recombination to show that both QD-LED efficiency and the onset for efficiency roll-off are strongly influenced by Auger recombination. Finally, we demonstrate that device efficiency can be improved by either reducing Auger recombination rates, or by improving charge-injection balance, both of which can be accomplished through engineering of the QD structure.
UR - http://www.scopus.com/inward/record.url?scp=84925081666&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84925081666&partnerID=8YFLogxK
U2 - 10.1149/06105.0075ecst
DO - 10.1149/06105.0075ecst
M3 - Conference contribution
AN - SCOPUS:84925081666
VL - 61
SP - 75
EP - 85
BT - ECS Transactions
PB - Electrochemical Society Inc.
ER -