Impurity-induced deep centers in Tl6SI4

Hongliang Shi, Wenwen Lin, Mercouri G Kanatzidis, Csaba Szeles, Mao Hua Du

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Tl6SI4 is a promising material for room-temperature semiconductor radiation detection applications. The history of the development of semiconductor radiation detection materials has demonstrated that impurities strongly affect the carrier transport and that material purification is a critically important step in improving the carrier transport and thereby the detector performance. Here, we report combined experimental and theoretical studies of impurities in Tl6SI4. Impurity concentrations in Tl6SI4 were analyzed by glow discharge mass spectrometry. Purification of the raw material by multi-pass vertical narrow zone refining was found to be effective in reducing the concentrations of most impurities. Density functional theory calculations were also performed to study the trapping levels introduced by the main impurities detected in experiments. We show that, among dozens of detected impurities, most are either electrically inactive or shallow. In the purified Tl6SI4 sample, only Bi has a significant concentration (0.2 ppm wt) and introduces deep electron trapping levels in the band gap. Improvement of the purification processes is expected to further reduce the impurity concentrations and their impact on carrier transport in Tl6SI4, leading to improved detector performance.

Original languageEnglish
Article number145102
JournalJournal of Applied Physics
Volume121
Issue number14
DOIs
Publication statusPublished - Apr 14 2017

Fingerprint

impurities
purification
trapping
zone melting
detectors
radiation
glow discharges
mass spectroscopy
histories
density functional theory
room temperature
electrons

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Impurity-induced deep centers in Tl6SI4 . / Shi, Hongliang; Lin, Wenwen; Kanatzidis, Mercouri G; Szeles, Csaba; Du, Mao Hua.

In: Journal of Applied Physics, Vol. 121, No. 14, 145102, 14.04.2017.

Research output: Contribution to journalArticle

Shi, Hongliang ; Lin, Wenwen ; Kanatzidis, Mercouri G ; Szeles, Csaba ; Du, Mao Hua. / Impurity-induced deep centers in Tl6SI4 In: Journal of Applied Physics. 2017 ; Vol. 121, No. 14.
@article{83f8fce0116f4a6096f8626c343476bf,
title = "Impurity-induced deep centers in Tl6SI4",
abstract = "Tl6SI4 is a promising material for room-temperature semiconductor radiation detection applications. The history of the development of semiconductor radiation detection materials has demonstrated that impurities strongly affect the carrier transport and that material purification is a critically important step in improving the carrier transport and thereby the detector performance. Here, we report combined experimental and theoretical studies of impurities in Tl6SI4. Impurity concentrations in Tl6SI4 were analyzed by glow discharge mass spectrometry. Purification of the raw material by multi-pass vertical narrow zone refining was found to be effective in reducing the concentrations of most impurities. Density functional theory calculations were also performed to study the trapping levels introduced by the main impurities detected in experiments. We show that, among dozens of detected impurities, most are either electrically inactive or shallow. In the purified Tl6SI4 sample, only Bi has a significant concentration (0.2 ppm wt) and introduces deep electron trapping levels in the band gap. Improvement of the purification processes is expected to further reduce the impurity concentrations and their impact on carrier transport in Tl6SI4, leading to improved detector performance.",
author = "Hongliang Shi and Wenwen Lin and Kanatzidis, {Mercouri G} and Csaba Szeles and Du, {Mao Hua}",
year = "2017",
month = "4",
day = "14",
doi = "10.1063/1.4980174",
language = "English",
volume = "121",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "14",

}

TY - JOUR

T1 - Impurity-induced deep centers in Tl6SI4

AU - Shi, Hongliang

AU - Lin, Wenwen

AU - Kanatzidis, Mercouri G

AU - Szeles, Csaba

AU - Du, Mao Hua

PY - 2017/4/14

Y1 - 2017/4/14

N2 - Tl6SI4 is a promising material for room-temperature semiconductor radiation detection applications. The history of the development of semiconductor radiation detection materials has demonstrated that impurities strongly affect the carrier transport and that material purification is a critically important step in improving the carrier transport and thereby the detector performance. Here, we report combined experimental and theoretical studies of impurities in Tl6SI4. Impurity concentrations in Tl6SI4 were analyzed by glow discharge mass spectrometry. Purification of the raw material by multi-pass vertical narrow zone refining was found to be effective in reducing the concentrations of most impurities. Density functional theory calculations were also performed to study the trapping levels introduced by the main impurities detected in experiments. We show that, among dozens of detected impurities, most are either electrically inactive or shallow. In the purified Tl6SI4 sample, only Bi has a significant concentration (0.2 ppm wt) and introduces deep electron trapping levels in the band gap. Improvement of the purification processes is expected to further reduce the impurity concentrations and their impact on carrier transport in Tl6SI4, leading to improved detector performance.

AB - Tl6SI4 is a promising material for room-temperature semiconductor radiation detection applications. The history of the development of semiconductor radiation detection materials has demonstrated that impurities strongly affect the carrier transport and that material purification is a critically important step in improving the carrier transport and thereby the detector performance. Here, we report combined experimental and theoretical studies of impurities in Tl6SI4. Impurity concentrations in Tl6SI4 were analyzed by glow discharge mass spectrometry. Purification of the raw material by multi-pass vertical narrow zone refining was found to be effective in reducing the concentrations of most impurities. Density functional theory calculations were also performed to study the trapping levels introduced by the main impurities detected in experiments. We show that, among dozens of detected impurities, most are either electrically inactive or shallow. In the purified Tl6SI4 sample, only Bi has a significant concentration (0.2 ppm wt) and introduces deep electron trapping levels in the band gap. Improvement of the purification processes is expected to further reduce the impurity concentrations and their impact on carrier transport in Tl6SI4, leading to improved detector performance.

UR - http://www.scopus.com/inward/record.url?scp=85017567696&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85017567696&partnerID=8YFLogxK

U2 - 10.1063/1.4980174

DO - 10.1063/1.4980174

M3 - Article

AN - SCOPUS:85017567696

VL - 121

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 14

M1 - 145102

ER -