Abstract
Herein, an in situ solution growth method to prepare preferentially assembled and well-distributed α-CsPbI3 nanocrystals (NCs)/reduced graphene oxide (rGO) heterostructures is presented. Owing to its excellent thermal conductivity, carrier mobility, hydrophobic nature and passivation effect, rGO could reduce the number of ligands on the surface of α-CsPbI3 NCs, provide protection against air and moisture, and enhance the carrier separation and carrier transport properties of nanocrystals. The homogeneous growth of nanocrystals and their distribution along the surface of rGO also improved the stability and carrier transport quality compared to that of α-CsPbI3 NCs. Particularly, α-CsPbI3 NCs/rGO heterostructures show a suitable band gap of ∼1.74 eV, an acceptable photoluminescence (PL) intensity and a PL quantum yield (PLQY) of ∼10.7%. The decay lifetime of these heterostructures was maintained at ∼43.5 ns and PLQY was maintained at ∼68% of the initial value when stored in ambient conditions for ∼4 weeks. Finally, we demonstrate the inkjet printing of these heterostructures, manifesting their favorable dispersibility in organic solvents, and showing their utility as optically active materials for applications in optoelectronic devices.
| Original language | English |
|---|---|
| Pages (from-to) | 6795-6804 |
| Number of pages | 10 |
| Journal | Journal of Materials Chemistry C |
| Volume | 7 |
| Issue number | 22 |
| DOIs | |
| Publication status | Published - Jan 1 2019 |
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ASJC Scopus subject areas
- Chemistry(all)
- Materials Chemistry
Cite this
In situ growth of α-CsPbI3 perovskite nanocrystals on the surface of reduced graphene oxide with enhanced stability and carrier transport quality. / Zhang, Qi; Nan, Hui; Zhou, Yangying; Gu, Youchen; Tai, Meiqian; Wei, Yaxuan; Hao, Feng; Li, Jianbao; Oron, Dan; Lin, Hong.
In: Journal of Materials Chemistry C, Vol. 7, No. 22, 01.01.2019, p. 6795-6804.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - In situ growth of α-CsPbI3 perovskite nanocrystals on the surface of reduced graphene oxide with enhanced stability and carrier transport quality
AU - Zhang, Qi
AU - Nan, Hui
AU - Zhou, Yangying
AU - Gu, Youchen
AU - Tai, Meiqian
AU - Wei, Yaxuan
AU - Hao, Feng
AU - Li, Jianbao
AU - Oron, Dan
AU - Lin, Hong
PY - 2019/1/1
Y1 - 2019/1/1
N2 - Herein, an in situ solution growth method to prepare preferentially assembled and well-distributed α-CsPbI3 nanocrystals (NCs)/reduced graphene oxide (rGO) heterostructures is presented. Owing to its excellent thermal conductivity, carrier mobility, hydrophobic nature and passivation effect, rGO could reduce the number of ligands on the surface of α-CsPbI3 NCs, provide protection against air and moisture, and enhance the carrier separation and carrier transport properties of nanocrystals. The homogeneous growth of nanocrystals and their distribution along the surface of rGO also improved the stability and carrier transport quality compared to that of α-CsPbI3 NCs. Particularly, α-CsPbI3 NCs/rGO heterostructures show a suitable band gap of ∼1.74 eV, an acceptable photoluminescence (PL) intensity and a PL quantum yield (PLQY) of ∼10.7%. The decay lifetime of these heterostructures was maintained at ∼43.5 ns and PLQY was maintained at ∼68% of the initial value when stored in ambient conditions for ∼4 weeks. Finally, we demonstrate the inkjet printing of these heterostructures, manifesting their favorable dispersibility in organic solvents, and showing their utility as optically active materials for applications in optoelectronic devices.
AB - Herein, an in situ solution growth method to prepare preferentially assembled and well-distributed α-CsPbI3 nanocrystals (NCs)/reduced graphene oxide (rGO) heterostructures is presented. Owing to its excellent thermal conductivity, carrier mobility, hydrophobic nature and passivation effect, rGO could reduce the number of ligands on the surface of α-CsPbI3 NCs, provide protection against air and moisture, and enhance the carrier separation and carrier transport properties of nanocrystals. The homogeneous growth of nanocrystals and their distribution along the surface of rGO also improved the stability and carrier transport quality compared to that of α-CsPbI3 NCs. Particularly, α-CsPbI3 NCs/rGO heterostructures show a suitable band gap of ∼1.74 eV, an acceptable photoluminescence (PL) intensity and a PL quantum yield (PLQY) of ∼10.7%. The decay lifetime of these heterostructures was maintained at ∼43.5 ns and PLQY was maintained at ∼68% of the initial value when stored in ambient conditions for ∼4 weeks. Finally, we demonstrate the inkjet printing of these heterostructures, manifesting their favorable dispersibility in organic solvents, and showing their utility as optically active materials for applications in optoelectronic devices.
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U2 - 10.1039/c9tc01012b
DO - 10.1039/c9tc01012b
M3 - Article
AN - SCOPUS:85066932975
VL - 7
SP - 6795
EP - 6804
JO - Journal of Materials Chemistry C
JF - Journal of Materials Chemistry C
SN - 2050-7526
IS - 22
ER -