In situ mass spectroscopy of recoiled ion studies of degradation processes in SrBi2Ta2O9 thin films during hydrogen gas annealing

J. Im, O. Auciello, A. R. Krauss, D. M. Gruen, Robert P. H. Chang, S. H. Kim, A. I. Kingon

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Citation (Scopus)

Abstract

It is known that the forming gas (N2-H2 mixture) annealing process required for microcircuit fabrication results in an unacceptable electrical degradation of SrBi2Ta2O9 (SBT) ferroelectric capacitors due mainly to the interaction of H2 with the ferroelectric layer of the capacitor. We have found a strong relationship between changes in the surface composition of the ferroelectric layer and the electrical properties of SBT capacitors as a result of hydrogen annealing. Mass spectroscopy of recoiled ions (MSRI) analysis revealed a strong reduction in the Bi signal as a function of exposure to hydrogen at high temperatures (approx. 500°C). The Bi signal reduction correlates with Bi depletion in the SBT surface region. Subsequent annealing in oxygen at temperatures in the range of 700-800°C resulted in the recovery of the MSRI Bi signal, corresponding to the replenishment of Bi in the previously Bi-depleted surface region. XRD analysis (probing the whole SBT film thickness) showed little difference in the XRD spectra of the SBT films before and after hydrogen and oxygen-recovery annealing. The combined results of the MSRI and XRD analyses can be interpreted as an indication that the degradation of the electrical properties of the SBT capacitors, after hydrogen annealing, is mainly due to the degradation of the near surface region of the SBT layer.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages287-292
Number of pages6
Volume541
Publication statusPublished - 1999
EventProceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' - Boston, MA, USA
Duration: Nov 30 1998Dec 3 1998

Other

OtherProceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998'
CityBoston, MA, USA
Period11/30/9812/3/98

Fingerprint

Hydrogen
Gases
Spectroscopy
Annealing
Ions
Capacitors
Degradation
Thin films
Ferroelectric materials
Electric properties
Oxygen
Recovery
Surface structure
Film thickness
Fabrication
Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Im, J., Auciello, O., Krauss, A. R., Gruen, D. M., Chang, R. P. H., Kim, S. H., & Kingon, A. I. (1999). In situ mass spectroscopy of recoiled ion studies of degradation processes in SrBi2Ta2O9 thin films during hydrogen gas annealing. In Materials Research Society Symposium - Proceedings (Vol. 541, pp. 287-292). Materials Research Society.

In situ mass spectroscopy of recoiled ion studies of degradation processes in SrBi2Ta2O9 thin films during hydrogen gas annealing. / Im, J.; Auciello, O.; Krauss, A. R.; Gruen, D. M.; Chang, Robert P. H.; Kim, S. H.; Kingon, A. I.

Materials Research Society Symposium - Proceedings. Vol. 541 Materials Research Society, 1999. p. 287-292.

Research output: Chapter in Book/Report/Conference proceedingChapter

Im, J, Auciello, O, Krauss, AR, Gruen, DM, Chang, RPH, Kim, SH & Kingon, AI 1999, In situ mass spectroscopy of recoiled ion studies of degradation processes in SrBi2Ta2O9 thin films during hydrogen gas annealing. in Materials Research Society Symposium - Proceedings. vol. 541, Materials Research Society, pp. 287-292, Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998', Boston, MA, USA, 11/30/98.
Im J, Auciello O, Krauss AR, Gruen DM, Chang RPH, Kim SH et al. In situ mass spectroscopy of recoiled ion studies of degradation processes in SrBi2Ta2O9 thin films during hydrogen gas annealing. In Materials Research Society Symposium - Proceedings. Vol. 541. Materials Research Society. 1999. p. 287-292
Im, J. ; Auciello, O. ; Krauss, A. R. ; Gruen, D. M. ; Chang, Robert P. H. ; Kim, S. H. ; Kingon, A. I. / In situ mass spectroscopy of recoiled ion studies of degradation processes in SrBi2Ta2O9 thin films during hydrogen gas annealing. Materials Research Society Symposium - Proceedings. Vol. 541 Materials Research Society, 1999. pp. 287-292
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abstract = "It is known that the forming gas (N2-H2 mixture) annealing process required for microcircuit fabrication results in an unacceptable electrical degradation of SrBi2Ta2O9 (SBT) ferroelectric capacitors due mainly to the interaction of H2 with the ferroelectric layer of the capacitor. We have found a strong relationship between changes in the surface composition of the ferroelectric layer and the electrical properties of SBT capacitors as a result of hydrogen annealing. Mass spectroscopy of recoiled ions (MSRI) analysis revealed a strong reduction in the Bi signal as a function of exposure to hydrogen at high temperatures (approx. 500°C). The Bi signal reduction correlates with Bi depletion in the SBT surface region. Subsequent annealing in oxygen at temperatures in the range of 700-800°C resulted in the recovery of the MSRI Bi signal, corresponding to the replenishment of Bi in the previously Bi-depleted surface region. XRD analysis (probing the whole SBT film thickness) showed little difference in the XRD spectra of the SBT films before and after hydrogen and oxygen-recovery annealing. The combined results of the MSRI and XRD analyses can be interpreted as an indication that the degradation of the electrical properties of the SBT capacitors, after hydrogen annealing, is mainly due to the degradation of the near surface region of the SBT layer.",
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AU - Gruen, D. M.

AU - Chang, Robert P. H.

AU - Kim, S. H.

AU - Kingon, A. I.

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AB - It is known that the forming gas (N2-H2 mixture) annealing process required for microcircuit fabrication results in an unacceptable electrical degradation of SrBi2Ta2O9 (SBT) ferroelectric capacitors due mainly to the interaction of H2 with the ferroelectric layer of the capacitor. We have found a strong relationship between changes in the surface composition of the ferroelectric layer and the electrical properties of SBT capacitors as a result of hydrogen annealing. Mass spectroscopy of recoiled ions (MSRI) analysis revealed a strong reduction in the Bi signal as a function of exposure to hydrogen at high temperatures (approx. 500°C). The Bi signal reduction correlates with Bi depletion in the SBT surface region. Subsequent annealing in oxygen at temperatures in the range of 700-800°C resulted in the recovery of the MSRI Bi signal, corresponding to the replenishment of Bi in the previously Bi-depleted surface region. XRD analysis (probing the whole SBT film thickness) showed little difference in the XRD spectra of the SBT films before and after hydrogen and oxygen-recovery annealing. The combined results of the MSRI and XRD analyses can be interpreted as an indication that the degradation of the electrical properties of the SBT capacitors, after hydrogen annealing, is mainly due to the degradation of the near surface region of the SBT layer.

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