IN SITU MEASUREMENT AND ANALYSIS OF PLASMA-GROWN GaAs OXIDES WITH SPECTROSCOPIC ELLIPSOMETRY.

J. B. Theeten, Robert P. H. Chang, D. E. Aspnes, T. E. Adams

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

A versatile ellipsometer with variable energy (1. 5-5. 6 eV) and angle of incidence (60 degree -75 degree ) has been constructed for in situ thin film diagnostics on a linear plasma reactor. Such information as the rate of oxidation, transient effects, uniformity, and optical absorption of the oxide layer are obtained during plasma processing. The oxidation process can be interrupted at any moment for examining the sample as a function of energy and angle of incidence. A multilayer analysis is presented to determine (i) the dielectric function and the thickness of the oxide layer, and (ii) the composition and the thickness of the interface region between the oxide and the GaAs substrate. The effect of the rate of plasma oxidation on the oxide properties is also discussed.

Original languageEnglish
Pages (from-to)378-385
Number of pages8
JournalJournal of the Electrochemical Society
Volume127
Issue number2
Publication statusPublished - Feb 1980

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Spectroscopic ellipsometry
in situ measurement
Oxides
ellipsometry
Plasmas
oxides
Oxidation
oxidation
incidence
Plasma applications
ellipsometers
Light absorption
Multilayers
optical absorption
reactors
moments
Thin films
gallium arsenide
energy
Substrates

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

IN SITU MEASUREMENT AND ANALYSIS OF PLASMA-GROWN GaAs OXIDES WITH SPECTROSCOPIC ELLIPSOMETRY. / Theeten, J. B.; Chang, Robert P. H.; Aspnes, D. E.; Adams, T. E.

In: Journal of the Electrochemical Society, Vol. 127, No. 2, 02.1980, p. 378-385.

Research output: Contribution to journalArticle

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