Abstract
A versatile ellipsometer with variable energy (1. 5-5. 6 eV) and angle of incidence (60 degree -75 degree ) has been constructed for in situ thin film diagnostics on a linear plasma reactor. Such information as the rate of oxidation, transient effects, uniformity, and optical absorption of the oxide layer are obtained during plasma processing. The oxidation process can be interrupted at any moment for examining the sample as a function of energy and angle of incidence. A multilayer analysis is presented to determine (i) the dielectric function and the thickness of the oxide layer, and (ii) the composition and the thickness of the interface region between the oxide and the GaAs substrate. The effect of the rate of plasma oxidation on the oxide properties is also discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 378-385 |
| Number of pages | 8 |
| Journal | Journal of the Electrochemical Society |
| Volume | 127 |
| Issue number | 2 |
| Publication status | Published - Feb 1980 |
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ASJC Scopus subject areas
- Electrochemistry
- Surfaces, Coatings and Films
- Surfaces and Interfaces
Cite this
IN SITU MEASUREMENT AND ANALYSIS OF PLASMA-GROWN GaAs OXIDES WITH SPECTROSCOPIC ELLIPSOMETRY. / Theeten, J. B.; Chang, Robert P. H.; Aspnes, D. E.; Adams, T. E.
In: Journal of the Electrochemical Society, Vol. 127, No. 2, 02.1980, p. 378-385.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - IN SITU MEASUREMENT AND ANALYSIS OF PLASMA-GROWN GaAs OXIDES WITH SPECTROSCOPIC ELLIPSOMETRY.
AU - Theeten, J. B.
AU - Chang, Robert P. H.
AU - Aspnes, D. E.
AU - Adams, T. E.
PY - 1980/2
Y1 - 1980/2
N2 - A versatile ellipsometer with variable energy (1. 5-5. 6 eV) and angle of incidence (60 degree -75 degree ) has been constructed for in situ thin film diagnostics on a linear plasma reactor. Such information as the rate of oxidation, transient effects, uniformity, and optical absorption of the oxide layer are obtained during plasma processing. The oxidation process can be interrupted at any moment for examining the sample as a function of energy and angle of incidence. A multilayer analysis is presented to determine (i) the dielectric function and the thickness of the oxide layer, and (ii) the composition and the thickness of the interface region between the oxide and the GaAs substrate. The effect of the rate of plasma oxidation on the oxide properties is also discussed.
AB - A versatile ellipsometer with variable energy (1. 5-5. 6 eV) and angle of incidence (60 degree -75 degree ) has been constructed for in situ thin film diagnostics on a linear plasma reactor. Such information as the rate of oxidation, transient effects, uniformity, and optical absorption of the oxide layer are obtained during plasma processing. The oxidation process can be interrupted at any moment for examining the sample as a function of energy and angle of incidence. A multilayer analysis is presented to determine (i) the dielectric function and the thickness of the oxide layer, and (ii) the composition and the thickness of the interface region between the oxide and the GaAs substrate. The effect of the rate of plasma oxidation on the oxide properties is also discussed.
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UR - http://www.scopus.com/inward/citedby.url?scp=0018983224&partnerID=8YFLogxK
M3 - Article
VL - 127
SP - 378
EP - 385
JO - Journal of the Electrochemical Society
JF - Journal of the Electrochemical Society
SN - 0013-4651
IS - 2
ER -