IN SITU MEASUREMENT AND ANALYSIS OF PLASMA-GROWN GaAs OXIDES WITH SPECTROSCOPIC ELLIPSOMETRY.

J. B. Theeten; Robert P. H. Chang; D. E. Aspnes; T. E. Adams

IN SITU MEASUREMENT AND ANALYSIS OF PLASMA-GROWN GaAs OXIDES WITH SPECTROSCOPIC ELLIPSOMETRY.

J. B. Theeten, Robert P. H. Chang, D. E. Aspnes, T. E. Adams

Northwestern University

Research output: Contribution to journal › Article

19 Citations (Scopus)

Abstract

A versatile ellipsometer with variable energy (1. 5-5. 6 eV) and angle of incidence (60 degree -75 degree ) has been constructed for in situ thin film diagnostics on a linear plasma reactor. Such information as the rate of oxidation, transient effects, uniformity, and optical absorption of the oxide layer are obtained during plasma processing. The oxidation process can be interrupted at any moment for examining the sample as a function of energy and angle of incidence. A multilayer analysis is presented to determine (i) the dielectric function and the thickness of the oxide layer, and (ii) the composition and the thickness of the interface region between the oxide and the GaAs substrate. The effect of the rate of plasma oxidation on the oxide properties is also discussed.

Original language	English
Pages (from-to)	378-385
Number of pages	8
Journal	Journal of the Electrochemical Society
Volume	127
Issue number	2
Publication status	Published - Feb 1980

ASJC Scopus subject areas

Electrochemistry
Surfaces, Coatings and Films
Surfaces and Interfaces

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Theeten, J. B., Chang, R. P. H., Aspnes, D. E., & Adams, T. E. (1980). IN SITU MEASUREMENT AND ANALYSIS OF PLASMA-GROWN GaAs OXIDES WITH SPECTROSCOPIC ELLIPSOMETRY. Journal of the Electrochemical Society, 127(2), 378-385.

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