Abstract
In situ monitoring of the transformation of B4C under electric field using Raman spectroscopy is reported. Application of electric fields up to 5000 V/cm leads to local segregation of carbon, indicated by the appearance of Raman D and G peaks. At low electric fields (<3000 V/cm) the segregated carbon is amorphous, while at higher fields aromatic sp2 clustering is observed. Electrical measurements as a function of temperature are used to complement the Raman measurements. The results demonstrate that it is possible to induce transformations in boron carbide using electric fields that are comparable with those obtained under shock and nanoindentation.
| Original language | English |
|---|---|
| Pages (from-to) | 2666-2669 |
| Number of pages | 4 |
| Journal | Journal of the American Ceramic Society |
| Volume | 91 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - Aug 1 2008 |
ASJC Scopus subject areas
- Ceramics and Composites
- Materials Chemistry
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Fanchini, G., Gupta, V., Mann, A. B., & Chhowalla, M. (2008). In situ monitoring of structural changes in boron carbide under electric fields. Journal of the American Ceramic Society, 91(8), 2666-2669. https://doi.org/10.1111/j.1551-2916.2008.02488.x