In situ monitoring of structural changes in boron carbide under electric fields

Giovanni Fanchini, Varun Gupta, Adrian B. Mann, Manish Chhowalla

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

In situ monitoring of the transformation of B4C under electric field using Raman spectroscopy is reported. Application of electric fields up to 5000 V/cm leads to local segregation of carbon, indicated by the appearance of Raman D and G peaks. At low electric fields (2 clustering is observed. Electrical measurements as a function of temperature are used to complement the Raman measurements. The results demonstrate that it is possible to induce transformations in boron carbide using electric fields that are comparable with those obtained under shock and nanoindentation.

Original languageEnglish
Pages (from-to)2666-2669
Number of pages4
JournalJournal of the American Ceramic Society
Volume91
Issue number8
DOIs
Publication statusPublished - Aug 2008

Fingerprint

Boron carbide
Electric fields
Monitoring
Nanoindentation
Raman spectroscopy
Carbon
Temperature

ASJC Scopus subject areas

  • Ceramics and Composites

Cite this

In situ monitoring of structural changes in boron carbide under electric fields. / Fanchini, Giovanni; Gupta, Varun; Mann, Adrian B.; Chhowalla, Manish.

In: Journal of the American Ceramic Society, Vol. 91, No. 8, 08.2008, p. 2666-2669.

Research output: Contribution to journalArticle

Fanchini, Giovanni ; Gupta, Varun ; Mann, Adrian B. ; Chhowalla, Manish. / In situ monitoring of structural changes in boron carbide under electric fields. In: Journal of the American Ceramic Society. 2008 ; Vol. 91, No. 8. pp. 2666-2669.
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