In-situ probe of gate dielectric-semiconductor interfacial order in organic transistors

Origin and control of large performance sensitivities

Stephanie R. Walter, Jangdae Youn, Jonathan D. Emery, Sumit Kewalramani, Jonathan W. Hennek, Michael J. Bedzyk, Antonio Facchetti, Tobin J Marks, Franz M. Geiger

Research output: Contribution to journalArticle

63 Citations (Scopus)

Abstract

Organic thin film transistor (OTFT) performance is highly materials interface-dependent, and dramatic performance enhancements can be achieved by properly modifying the semiconductor/gate dielectric interface. However, the origin of these effects is not well understood, as this is a classic "buried interface" problem that has traditionally been difficult to address. Here we address the question of how n-octadecylsilane (OTS)-derived self-assembled monolayers (SAMs) on Si/SiO 2 gate dielectrics affect the OTFT performance of the archetypical small-molecule p-type semiconductors P-BTDT (phenylbenzo[d,d]thieno[3,2-b;4,5-b]dithiophene) and pentacene using combined in situ sum frequency generation spectroscopy, atomic force microscopy, and grazing incidence and reflectance X-ray scattering. The molecular order and orientation of the OTFT components at the dielectric/semiconductor interface is probed as a function of SAM growth mode in order to understand how this impacts the overlying semiconductor growth mode, packing, crystallinity, and carrier mobility, and hence, transistor performance. This understanding, using a new, humidity-specific growth procedure, leads to a reproducible, scalable process for highly ordered OTS SAMs, which in turn nucleates highly ordered p-type semiconductor film growth, and optimizes OTFT performance. Surprisingly, the combined data reveal that while SAM molecular order dramatically impacts semiconductor crystalline domain size and carrier mobility, it does not significantly influence the local orientation of the overlying organic semiconductor molecules.

Original languageEnglish
Pages (from-to)11726-11733
Number of pages8
JournalJournal of the American Chemical Society
Volume134
Issue number28
DOIs
Publication statusPublished - Jul 18 2012

Fingerprint

Semiconductors
Gate dielectrics
Self assembled monolayers
Thin film transistors
Transistors
Semiconductor growth
Semiconductor materials
Carrier mobility
Crystal orientation
Molecules
Semiconducting organic compounds
Growth
Film growth
X ray scattering
Atomic force microscopy
Atmospheric humidity
Spectroscopy
Crystalline materials
Atomic Force Microscopy
Humidity

ASJC Scopus subject areas

  • Chemistry(all)
  • Catalysis
  • Biochemistry
  • Colloid and Surface Chemistry

Cite this

In-situ probe of gate dielectric-semiconductor interfacial order in organic transistors : Origin and control of large performance sensitivities. / Walter, Stephanie R.; Youn, Jangdae; Emery, Jonathan D.; Kewalramani, Sumit; Hennek, Jonathan W.; Bedzyk, Michael J.; Facchetti, Antonio; Marks, Tobin J; Geiger, Franz M.

In: Journal of the American Chemical Society, Vol. 134, No. 28, 18.07.2012, p. 11726-11733.

Research output: Contribution to journalArticle

Walter, Stephanie R. ; Youn, Jangdae ; Emery, Jonathan D. ; Kewalramani, Sumit ; Hennek, Jonathan W. ; Bedzyk, Michael J. ; Facchetti, Antonio ; Marks, Tobin J ; Geiger, Franz M. / In-situ probe of gate dielectric-semiconductor interfacial order in organic transistors : Origin and control of large performance sensitivities. In: Journal of the American Chemical Society. 2012 ; Vol. 134, No. 28. pp. 11726-11733.
@article{d21014da117e43af92adb94430284352,
title = "In-situ probe of gate dielectric-semiconductor interfacial order in organic transistors: Origin and control of large performance sensitivities",
abstract = "Organic thin film transistor (OTFT) performance is highly materials interface-dependent, and dramatic performance enhancements can be achieved by properly modifying the semiconductor/gate dielectric interface. However, the origin of these effects is not well understood, as this is a classic {"}buried interface{"} problem that has traditionally been difficult to address. Here we address the question of how n-octadecylsilane (OTS)-derived self-assembled monolayers (SAMs) on Si/SiO 2 gate dielectrics affect the OTFT performance of the archetypical small-molecule p-type semiconductors P-BTDT (phenylbenzo[d,d]thieno[3,2-b;4,5-b]dithiophene) and pentacene using combined in situ sum frequency generation spectroscopy, atomic force microscopy, and grazing incidence and reflectance X-ray scattering. The molecular order and orientation of the OTFT components at the dielectric/semiconductor interface is probed as a function of SAM growth mode in order to understand how this impacts the overlying semiconductor growth mode, packing, crystallinity, and carrier mobility, and hence, transistor performance. This understanding, using a new, humidity-specific growth procedure, leads to a reproducible, scalable process for highly ordered OTS SAMs, which in turn nucleates highly ordered p-type semiconductor film growth, and optimizes OTFT performance. Surprisingly, the combined data reveal that while SAM molecular order dramatically impacts semiconductor crystalline domain size and carrier mobility, it does not significantly influence the local orientation of the overlying organic semiconductor molecules.",
author = "Walter, {Stephanie R.} and Jangdae Youn and Emery, {Jonathan D.} and Sumit Kewalramani and Hennek, {Jonathan W.} and Bedzyk, {Michael J.} and Antonio Facchetti and Marks, {Tobin J} and Geiger, {Franz M.}",
year = "2012",
month = "7",
day = "18",
doi = "10.1021/ja3036493",
language = "English",
volume = "134",
pages = "11726--11733",
journal = "Journal of the American Chemical Society",
issn = "0002-7863",
publisher = "American Chemical Society",
number = "28",

}

TY - JOUR

T1 - In-situ probe of gate dielectric-semiconductor interfacial order in organic transistors

T2 - Origin and control of large performance sensitivities

AU - Walter, Stephanie R.

AU - Youn, Jangdae

AU - Emery, Jonathan D.

AU - Kewalramani, Sumit

AU - Hennek, Jonathan W.

AU - Bedzyk, Michael J.

AU - Facchetti, Antonio

AU - Marks, Tobin J

AU - Geiger, Franz M.

PY - 2012/7/18

Y1 - 2012/7/18

N2 - Organic thin film transistor (OTFT) performance is highly materials interface-dependent, and dramatic performance enhancements can be achieved by properly modifying the semiconductor/gate dielectric interface. However, the origin of these effects is not well understood, as this is a classic "buried interface" problem that has traditionally been difficult to address. Here we address the question of how n-octadecylsilane (OTS)-derived self-assembled monolayers (SAMs) on Si/SiO 2 gate dielectrics affect the OTFT performance of the archetypical small-molecule p-type semiconductors P-BTDT (phenylbenzo[d,d]thieno[3,2-b;4,5-b]dithiophene) and pentacene using combined in situ sum frequency generation spectroscopy, atomic force microscopy, and grazing incidence and reflectance X-ray scattering. The molecular order and orientation of the OTFT components at the dielectric/semiconductor interface is probed as a function of SAM growth mode in order to understand how this impacts the overlying semiconductor growth mode, packing, crystallinity, and carrier mobility, and hence, transistor performance. This understanding, using a new, humidity-specific growth procedure, leads to a reproducible, scalable process for highly ordered OTS SAMs, which in turn nucleates highly ordered p-type semiconductor film growth, and optimizes OTFT performance. Surprisingly, the combined data reveal that while SAM molecular order dramatically impacts semiconductor crystalline domain size and carrier mobility, it does not significantly influence the local orientation of the overlying organic semiconductor molecules.

AB - Organic thin film transistor (OTFT) performance is highly materials interface-dependent, and dramatic performance enhancements can be achieved by properly modifying the semiconductor/gate dielectric interface. However, the origin of these effects is not well understood, as this is a classic "buried interface" problem that has traditionally been difficult to address. Here we address the question of how n-octadecylsilane (OTS)-derived self-assembled monolayers (SAMs) on Si/SiO 2 gate dielectrics affect the OTFT performance of the archetypical small-molecule p-type semiconductors P-BTDT (phenylbenzo[d,d]thieno[3,2-b;4,5-b]dithiophene) and pentacene using combined in situ sum frequency generation spectroscopy, atomic force microscopy, and grazing incidence and reflectance X-ray scattering. The molecular order and orientation of the OTFT components at the dielectric/semiconductor interface is probed as a function of SAM growth mode in order to understand how this impacts the overlying semiconductor growth mode, packing, crystallinity, and carrier mobility, and hence, transistor performance. This understanding, using a new, humidity-specific growth procedure, leads to a reproducible, scalable process for highly ordered OTS SAMs, which in turn nucleates highly ordered p-type semiconductor film growth, and optimizes OTFT performance. Surprisingly, the combined data reveal that while SAM molecular order dramatically impacts semiconductor crystalline domain size and carrier mobility, it does not significantly influence the local orientation of the overlying organic semiconductor molecules.

UR - http://www.scopus.com/inward/record.url?scp=84863902247&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84863902247&partnerID=8YFLogxK

U2 - 10.1021/ja3036493

DO - 10.1021/ja3036493

M3 - Article

VL - 134

SP - 11726

EP - 11733

JO - Journal of the American Chemical Society

JF - Journal of the American Chemical Society

SN - 0002-7863

IS - 28

ER -